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Md. Sazzad Hossain

Publications and source records attributed to Md. Sazzad Hossain.

5 recordsLinked to original sources

FORS-EMG: A Novel sEMG Dataset for Hand Gesture Recognition Across Multiple Forearm Orientations

Surface electromyography (sEMG) signals hold significant potential for gesture recognition and robust prosthetic hand development. However, sEMG signals are affected by various physiological and dynamic factors, including forearm orientation, electrode displacement, and limb position. Most existing sEMG datasets lack these dynamic considerations. This study introduces a novel multichannel sEMG dataset to evaluate commonly used hand gestures across three distinct forearm orientations. The dataset was collected from nineteen able-bodied subjects performing twelve hand gestures in three forearm orientations--supination, rest, and pronation. Eight MFI EMG electrodes were strategically placed at the elbow and mid-forearm to record high-quality EMG signals. Signal quality was validated through Signal-to-Noise Ratio (SNR) and Signal-to-Motion artifact ratio (SMR) metrics. Hand gesture classification performance across forearm orientations was evaluated using machine learning classifiers, including LDA, SVM, and KNN, alongside five feature extraction methods: TDD, TSD, FTDD, AR-RMS, and SNTDF. Furthermore, deep learning models such as 1D CNN, RNN, LSTM, and hybrid architectures were employed for a comprehensive analysis. Notably, the LDA classifier achieved the highest F1 score of 88.58\% with the SNTDF feature set when trained on hand gesture data of resting and tested across gesture data of all orientations. The promising results from extensive analyses underscore the proposed dataset's potential as a benchmark for advancing gesture recognition technologies, clinical sEMG research, and human-computer interaction applications. The dataset is publicly available in MATLAB format. Dataset: \url{https://www.kaggle.com/datasets/ummerummanchaity/fors-emg-a-novel-semg-dataset}

eess.SP↗

Gamma irradiated nanostructured NiFe2O4: Effect of gamma-photon on morphological, structural, optical and magnetic properties

The current manuscript highlights the preparation of NiFe2O4 nanoparticles by adopting sol-gel auto combustion route. The prime focus of this study is to investigate the impact of gamma irradiation on the microstructural, morphological, functional, optical and magnetic characteristics. The resulted NiFe2O4 products have been characterized employing numerous instrumental equipments such as FESEM, XRD, UV visible spectroscopy, FTIR and PPMS for a variety of gamma ray doses (0 kGy, 25 kGy and 100 kGy). FESEM micrographs illustrate the aggregation of ferrite nanoparticles in pristine NiFe2O4 product having an average particle size of 168 nm and the surface morphology is altered after exposure to gamma-irradiation. XRD spectra have been analyzed employing Rietveld method and the results of the XRD investigation reveal the desired phases (cubic spinel phases) of NiFe2O4 with observing other transitional phases. Several microstructural parameters such as bond length, bond angle, hopping length etc. have been determined from the analysis of Rietveld method. This study reports that the gamma irradiations demonstrate a great influence on optical bandgap energy and it varies from 1.80 and 1.89 eV evaluated via K M function. FTIR measurement depicts a proof for the persistence of Ni-O and Fe-O stretching vibrations within the respective products and thus indicating the successful development of NiFe2O4. The saturation magnetization (MS) of pristine Ni ferrite product is noticed to be 28.08 emug-1. A considerable increase in MS is observed in case of low gamma-dose (25 kGy) and a decrement nature is disclosed after the result of high dose of gamma irradiation (100kGy).

cond-mat.mtrl-sci↗

Pressure induced semiconductor to metal phase transition in CsSnBr3 perovskite

Phase transitions in metal halide perovskites triggered by external provocations produce significantly different material properties, providing a prodigious opportunity for a comprehensive applications. In the present study, the first principles calculation has been performed with the help of density functional theory (DFT) using CASTEP code to investigate the physical properties of lead-free CsSnBr3 metal halide under various hydrostatic pressures. The pressure effect is determined in the range of 0-16 GPa. Subsequently, a significant change is observed in lattice constant and volume with increasing pressure. The electronic band structure show semiconductor to metal phase transition under elevated pressure. The investigation of optical functions displays that the absorption edge of CsSnBr3 perovskite is shifted remarkably toward the low energy region (red shift) with improved pressure up to 16 GPa. In addition, the absorptivity and dielectric constant also upsurges with the applied hydrostatic pressure. Finally, the mechanical properties reveal that CsSnBr3 perovskite is mechanically stable and highly ductile; the ductility is increased with raising pressure. This type of semiconductor to metal phase transition may inspire a wide range of potential applications.

cond-mat.mtrl-sci↗

Investigation of Bose condensation in ideal Bose gas trapped under generic power law potential in $d$ dimension

The changes in characteristics of Bose condensation of ideal Bose gas due to an external generic power law potential $U=\sum_{i=1} ^d c_i |\frac{x_i}{a_i}|^{n_i}$ are studied carefully. Detailed calculation of Kim $et$ $al.$ (S. H. Kim, C. K. Kim and K. Nahm, J Phys. Condens. Matter 11 10269 (1999).) yielded the hierarchy of condensation transitions with changing fractional dimensionality. In this manuscript, some theorems regarding specific heat at constant volume $C_V$ are presented. Careful examination of these theorems reveal the existence of hidden hierarchy of the condensation transition in trapped systems as well.

cond-mat.quant-gas↗

A New Design Technique of Reversible BCD Adder Based on NMOS With Pass Transistor Gates

In this paper, we have proposed a new design technique of BCD Adder using newly constructed reversible gates are based on NMOS with pass transistor gates, where the conventional reversible gates are based on CMOS with transmission gates. We also compare the proposed reversible gates with the conventional CMOS reversible gates which show that the required number of Transistors is significantly reduced.

cs.OH↗