Md. Sharear Aman | Searcharxiv

arXiv2026

First-Principles Study of Novel Lead-Free Double Perovskite \b{eta}2SnGeX6 (\b{eta} = K, Rb; X = Cl, Br, I) for thermomechanical, optoelectronic and outstanding thermoelectric applications

In this study, the structural, mechanical, electronic, optical, and thermoelectric properties of the novel lead-free halide double perovskite series beta2SnGeX6 (beta = K, Rb; X = Cl, Br, I) are systematically investigated using density functional theory (DFT). Calculated formation energies, Tolerance factors, and octahedral factors confirm that all six compounds exhibit robust thermodynamic stability within a highly symmetric cubic geometry. Mechanical analysis derived from elastic parameters characterizes the entire series as fundamentally ductile, ensuring high processing elasticity and resistance to micro-cracking during device manufacturing. Electronic band structures reveal direct bandgaps showing exceptional composition-dependent tunability from 1.44 eV down to 0.64 eV via progressive halogen substitution. The wide gap chloride variations are optimized for single-junction photovoltaic absorbers, while the narrower-gap bromide and iodide analogs show immense promise for tandem solar architectures and near-infrared photodetectors. Thermoelectrically, heavy constituent atoms introduce strong lattice anharmonicity and intense high-temperature Umklapp phonon scattering, significantly suppressing lattice thermal conductivity. Combined with low carrier effective masses that optimize electrical transport, the iodide compounds achieve higher power factors and outstanding dimensionless figures of merit (ZT = 2.4 for K2SnGeI6 at 1000 K). Ultimately, these lead-free double perovskite family emerges as an environmentally benign and versatile platform for next-generation green optoelectronics and solid-state waste-heat recovery.

cond-mat.mtrl-sci↗

arXiv2026

First-principles insights into the optoelectronic and thermoelectric properties of X3NbY4(X= Cu, Ag, Au; Y=S, Se, Te) sulvanite compounds for energy applications

The structural, electronic, optical and transport properties of X3NbY4(X= Cu, Ag, Au; Y=S, Se, Te) sulvanite chalcogenides materials have been investigated using the Full Potential Linear Augmented Plane wave (FP-LAPW) within the density functional theory (DFT). The calculated structural information of X3NbY4 compounds is consistent with reported results of the same family compounds. The electronic band diagram exhibit indirect type band structures with bandgap value in the range of Eg 1.65- 0.50 eV using PBE-GGA functional and 1.80 eV-1.18 eV using TB-mBJ functional which indicates that these are semiconductor materials. The density of states (DOS) shows that the amount of bandgap decreases owing to move of valence band maximum (VBM) to the high energy level whereas the conduction band minimum (CBM) to the low energy level owing to the replacement of S-S-Te and Cu-Ag-Au atoms. The hybridized orbital by X-d, Nb-d and Y-p atomic orbitals dominate the VBM while hybridized by Nb-d and Y-p atomic orbitals mainly contribute the CBM. The elastic calculations exhibit that Cu-based materials have brittleness nature whereas Ag- and Au-based compounds are ductile nature. Furthermore, the phonon dispersion curves probes that these X3NbY4 compounds are dynamically stable. However, the calculated optical properties: dielectric function, absorption coefficient, refractive index, and energy loss function; specifically, the higher value of absorption coefficient (105 cm-1) indicates that these materials are attractive candidates in optoelectronics applications. Finally, thermoelectric parameters such as Seebeck coefficient, thermal conductivity, electrical conductivity, power factor (P.F) and ZT value of these compounds have also been investigated. Overall, the finding explores that these materials are potential candidates for the applications in optoelectronic and thermoelectric devices.

cond-mat.mtrl-sci↗