arXiv subjects

Meenakshi Singh

Publications and source records attributed to Meenakshi Singh.

17 recordsLinked to original sources

arXiv2026

Magnetotransport Measurements on Isolated Polycrystalline Grains of Type-II Silicon Clathrate

The first low-temperature electronic transport characterization of individual polycrystalline grains of type-II silicon clathrate (Na$_x$Si$_{136}$, $x \ll 1$), isolated using microfabrication techniques, is reported. Structural characterization via Raman spectroscopy confirms that the isolated grains are largely devoid of amorphous silicon (a-Si). Temperature-dependent resistivity reveals multiple conduction regimes, including thermally activated freeze-out behavior and a transition to low-activation-energy transport at cryogenic temperatures, consistent with hopping conduction mechanisms. Hall measurements from 290 K to 3.5 K yield carrier concentration and mobility trends that correlate with the extracted activation energies, verifying $n$-type conduction. Additionally, gate-dependent conductivity measurements demonstrate electrostatic tunability at room temperature. Collectively, these results establish the magnetotransport parameters of single, isolated grains of type-II silicon clathrate and demonstrate the potential of this material for future quantum and optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2026

Morphology control and low-temperature magnetotransport in chiral 2D perovskite R-(MBA)$_2$PbI$_4$

Two-dimensional chiral hybrid perovskites, such as R/S-(MBA)\textsubscript{2}PbI\textsubscript{4}, are leading candidates for realizing and studying chirality-dependent charge and spin transport. However, their prohibitive in-plane resistance has precluded the electrical characterization. Here, we overcome this bottleneck by engineering the thin-film morphology of the chiral perovskite $R\text{-(MBA)}_2\text{PbI}_4$, enabling the first robust lateral device integration. In Hall-bar geometries, we demonstrate Hall measurements under dark conditions, unambiguously identifying p-type conduction with a Hall mobility of $\sim 0.2 \text{cm}^2 \text{V}^{-1} \text{s}^{-1}$ and a carrier density of $\sim 3\times10^{14} \text{ cm}^{-2}$, parameters previously inaccessible in this class of materials. Furthermore, we observe enhanced magnetoresistance along transport paths crossing grain boundaries, highlighting the strong influence of morphology on in-plane transport. This work demonstrates in-plane magnetotransport, enabling future investigations of the fundamental mechanisms of chirality-induced spin selectivity (CISS) and accelerating the integration of chiral materials into functional spintronic devices.

cond-mat.mtrl-sci↗

arXiv2026

A Cryogenic Uniaxial Strain Cell for Quantum Devices

Mechanical strain is a powerful resource for tuning quantum systems, but existing piezoelectric strain cells are generally optimized for fragile, high-aspect-ratio single crystals rather than the thick, square-profile chips typical of semiconductor quantum devices. Furthermore, adapting these cells for qubits requires accommodating dense RF and DC wiring while maintaining strict electrical isolation from high-voltage piezo actuators. Here, we present a piezoelectric uniaxial strain cell designed to homogeneously strain thick, square-profile substrates. We introduce a highly symmetric dual-chip loading configuration that effectively suppresses flexural deformation and shear stress. The cell integrates a high-density RF/DC interposer to support standard wire bonding and encloses the actuators in a grounded Faraday cage to prevent unwanted Stark shifts in the device layer. Finite element simulations confirm that combining stiff actuators with this symmetric mounting drastically improves strain homogeneity. Finally, we validate the apparatus experimentally by applying uniaxial strain to a 200 $μ$m thick silicon die. Surface strain measurements demonstrate an applied strain of 215 $με$ for 200 V applied piezo bias.

quant-ph↗

arXiv2026

Graduate Training in Quantum Information Science and Engineering: Lessons, Challenges, and a Roadmap from the NSF Research Traineeship Programs

Since 2019, eighteen NSF Research Traineeship (NRT) awards in quantum information science and engineering (QISE) and adjacent fields have been funded, constituting the largest NSF-coordinated investment in graduate QISE training in the United States. Synthesizing lessons from our programs, we work through the central tensions that every QISE graduate program must negotiate: between depth in a home discipline and breadth across the field, between structured instruction and open-ended experiential and hands-on learning, and between training individual specialists and cultivating teams that collectively cover all areas of QISE. We describe the structural and pedagogical innovations the NRT programs have developed in response, assess what is working and what remains unresolved, and sketch 12 open problems the community will need to address as QISE graduate education scales beyond the well-resourced research universities where it has up till now been mainly concentrated. Eight concrete recommendations follow: (1) adopt the startup model of team-based training as an organizing philosophy; (2) invest immediately in sensing and communication curriculum development; (3) build student agency into program governance, not just activities; (4) establish structural mechanisms for industrial engagement rather than depending on goodwill; (5) design for sustainability from year one; (6) develop graduate-level textbooks spanning all three QISE pillars: computing, sensing, and communications; (7) establish shared outcome assessment instruments across programs; and (8) develop structured mechanisms for faculty professional development in QISE.

physics.ed-ph↗

arXiv2025

An optically enhanced crystalline silicon allotrope: hydrogen passivated type II silicon clathrate

While Si clathrates have been explored as promising direct bandgap semiconductors, their practical optoelectronic performance has been limited by high doping levels and structural defects. Hydrogen has long been used to improve the optoelectronic quality of conventional Si, yet its role in clathrate structures remains unexplored. In this study, we demonstrate that hydrogen (deuterium) can be incorporated into type II Si clathrate framework using remote plasma treatment. This process leads to the formation of NaD and SiD complexes, which significantly reduce both the Na donor density and dangling bond defects. Electron paramagnetic resonance confirms nearly a tenfold decrease in Na-related donor states, resulting in the lowest doping level reported in Si clathrates to date. Following passivation, the integrated photoluminescence intensity increases by a factor of 40, accompanied by a blue shift of the main emission peak, consistent with a transition closer to the intrinsic band edge. A new emission peak at 930 nm, attributed to hydrogen-related recombination centers, also appears. These improvements remain stable up to 400 oC. Altogether, this work establishes hydrogen passivation as a viable strategy for enhancing light emission in Si clathrates and opens a new pathway toward their application in Si-based light-emitting diodes and other direct-bandgap optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2023

Implementing two-qubit gates at the quantum speed limit

The speed of elementary quantum gates, particularly two-qubit gates, ultimately sets the limit on the speed at which quantum circuits can operate. In this work, we experimentally demonstrate commonly used two-qubit gates at nearly the fastest possible speed allowed by the physical interaction strength between two superconducting transmon qubits. We achieve this quantum speed limit by implementing experimental gates designed using a machine learning inspired optimal control method. Importantly, our method only requires the single-qubit drive strength to be moderately larger than the interaction strength to achieve an arbitrary two-qubit gate close to its analytical speed limit with high fidelity. Thus, the method is applicable to a variety of platforms including those with comparable single-qubit and two-qubit gate speeds, or those with always-on interactions. We expect our method to offer significant speedups for non-native two-qubit gates that are typically achieved with a long sequence of single-qubit and native two-qubit gates.

quant-ph↗

arXiv2022

Transition metal impurities in Silicon: Computational search for a semiconductor qubit

Semiconductors offer a promising platform for physical implementation of qubits, but their broad adoption is presently hindered by limited scalability and/or very low operating temperatures. Learning from the nitrogen-vacancy centers in diamond, our goal is to find equivalent optically active point defect centers in crystalline silicon, which could be advantageous for their scalability and integration with classical devices. Transition metal (TM) impurities in silicon are common paramagnetic deep defects, but a comprehensive theoretical study of the whole 3$d$ series that considers generalized Koopmans' condition is missing. We apply the HSE06(+U) method to examine their potential as optically active spin qubits and identify seven TM impurities that have optically allowed triplet-triplet transitions within the silicon band gap. These results provide the first step toward silicon-based qubits with higher operating temperatures for quantum sensing. Additionally, these point defects could lead to spin-photon interfaces in silicon-based qubits and devices for mid-infrared free-space communications.

cond-mat.mtrl-sci↗

arXiv2021

A universal quantum gate set for transmon qubits with strong ZZ interactions

High-fidelity single- and two-qubit gates are essential building blocks for a fault-tolerant quantum computer. While there has been much progress in suppressing single-qubit gate errors in superconducting qubit systems, two-qubit gates still suffer from error rates that are orders of magnitude higher. One limiting factor is the residual ZZ-interaction, which originates from a coupling between computational states and higher-energy states. While this interaction is usually viewed as a nuisance, here we experimentally demonstrate that it can be exploited to produce a universal set of fast single- and two-qubit entangling gates in a coupled transmon qubit system. To implement arbitrary single-qubit rotations, we design a new protocol called the two-axis gate that is based on a three-part composite pulse. It rotates a single qubit independently of the state of the other qubit despite the strong ZZ-coupling. We achieve single-qubit gate fidelities as high as 99.1% from randomized benchmarking measurements. We then demonstrate both a CZ gate and a CNOT gate. Because the system has a strong ZZ-interaction, a CZ gate can be achieved by letting the system freely evolve for a gate time $t_g=53.8$ ns. To design the CNOT gate, we utilize an analytical microwave pulse shape based on the SWIPHT protocol for realizing fast, low-leakage gates. We obtain fidelities of 94.6% and 97.8% for the CNOT and CZ gates respectively from quantum progress tomography.

quant-ph↗

arXiv2019

Quantum Simulators: Architectures and Opportunities

Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operation worldwide using a wide variety of experimental platforms. Recent advances in several physical architectures promise a golden age of quantum simulators ranging from highly optimized special purpose simulators to flexible programmable devices. These developments have enabled a convergence of ideas drawn from fundamental physics, computer science, and device engineering. They have strong potential to address problems of societal importance, ranging from understanding vital chemical processes, to enabling the design of new materials with enhanced performance, to solving complex computational problems. It is the position of the community, as represented by participants of the NSF workshop on "Programmable Quantum Simulators," that investment in a national quantum simulator program is a high priority in order to accelerate the progress in this field and to result in the first practical applications of quantum machines. Such a program should address two areas of emphasis: (1) support for creating quantum simulator prototypes usable by the broader scientific community, complementary to the present universal quantum computer effort in industry; and (2) support for fundamental research carried out by a blend of multi-investigator, multi-disciplinary collaborations with resources for quantum simulator software, hardware, and education.

quant-ph↗

arXiv2015

A Heuristic EDF Uplink Scheduler for Real Time Application in WiMAX Communication

WiMAX, Worldwide Interoperability for Microwave Access, is a developing wireless communication scheme that can provide broadband access to large-scale coverage. WiMAX belongs to the family of standards of IEEE-802.16. To satisfy user demands and support a new set of real time services and applications, a realistic and dynamic resource allocation algorithm is mandatory. One of the most efficient algorithm is EDF (earliest deadline first). But the problem is that when the difference between deadlines is large enough, then lower priority queues have to starve. So in this paper, we present a heuristic earliest deadline first (H-EDF) approach of the uplink scheduler of the WiMAX real time system. This H-EDF presents a way for efficient allocation of the bandwidth for uplink, so that bandwidth utilization is proper and appropriate fairness is provided to the system. We use Opnet simulator for implementing the WiMAX network, which uses this H-EDF scheduling algorithm. We will analysis the performance of the H-EDF algorithm in consideration with throughput as well as involvement of delay.

cs.NI↗

arXiv2013

Electronic transport properties of topological insulator films and low dimensional superconductors

In this review, we present a summary of some recent experiments on topological insulators (TIs) and superconducting nanowires and films. Electron-electron interaction (EEI), weak anti-localization (WAL) and anisotropic magneto-resistance (AMR) effect found in TI films by transport measurements are reported. Then, transport properties of superconducting films, bridges and nanowires and proximity effect in non-superconducting nanowires are described. Finally, the interplay between TIs and superconductors (SCs) is also discussed.

cond-mat.mes-hall↗

arXiv2013

Transport Properties of Topological Insulators Films and Nanowires

The last several years have witnessed the rapid developments in the study and understanding of topological insulators. In this review, after a brief summary of the history of topological insulators, we focus on the recent progress made in transport experiments on topological insulator films and nanowires. Some quantum phenomena, including the weak antilocalization, the Aharonov Bohm effect and the Shubnikov de Haas oscillations, observed in these nanostructures are described. In addition, the electronic transport evidence of the superconducting proximity effect as well as an anomalous resistance enhancement in topological insulator/superconductor hybrid structures is included.

cond-mat.mes-hall↗

arXiv2012

Quantum transport in topological insulator hybrid structures -- A combination of topological insulator and superconductor

In this paper, a brief review of the history of topological insulators is given. After that,electronic transport experiments in topological insulator-superconductor hybrid structures, including experimental methods, physical properties and seemingly contradictory observations are discussed. Additionally, some new topological insulator hybrid structures are proposed.

cond-mat.mes-hall↗

arXiv2012

Superconductivity in single crystalline Pb nanowires contacted by normal metal electrodes

The transport properties of superconducting single crystal Pb nanowires of 55 nm and 70 nm diameter are studied by standard four electrodes method. Resistance-temperature (R-T) scans and magneto-resistance (R-H) measurements show a series of resistance steps with increasing temperature and magnetic field as the wires are brought toward the normal state. The resistance-current (R-I) scans at different temperature and magnetic field show that the increase in R with I is punctuated with sharp steps at specific current values. We interpret these steps as consequence of phase slip centers (PSCs) in the superconducting wires enhanced by the presence of the normal Pt electrodes.

cond-mat.mes-hall↗

arXiv2011

Interplay between topological insulators and superconductors

Topological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films contacted by superconducting (In, Al and W) electrodes. The resistance of the film shows an abrupt and significant upturn when the electrodes become superconducting. In turn, the Bi2Se3 film strongly weakens the superconductivity of the electrodes, significantly reducing both their transition temperatures and critical fields. A possible interpretation of these results is that the superconducting electrodes are accessing the surface states and the experimental results are the consequence of the interplay between the Cooper pairs of the electrodes and the spin polarized current of the surface states in Bi2Se3.

cond-mat.mtrl-sci↗

arXiv2011

Anti-proximity Effect in Aluminum Nanowires

The anti-proximity effect, where the superconductivity in superconducting nanowires is suppressed or weakened when contacted by bulk superconducting electrodes, first revealed in arrays of Zn nanowires by tuning the electrodes from the superconducting to the normal state by means of an external magnetic field, has been confirmed in single crystal Aluminum nanowires. The critical current at zero magnetic field of an individual aluminum nanowire contacted by superconducting electrodes was found to be significantly smaller than that with normal electrodes showing that the effect is not a consequence of the magnetic field.

cond-mat.supr-con↗

arXiv2008

Dynamo Transition in Low-dimensional Models

Two low-dimensional magnetohydrodynamic models containing three velocity and three magnetic modes are described. One of them (nonhelical model) has zero kinetic and current helicity, while the other model (helical) has nonzero kinetic and current helicity. The velocity modes are forced in both these models. These low-dimensional models exhibit a dynamo transition at a critical forcing amplitude that depends on the Prandtl number. In the nonhelical model, dynamo exists only for magnetic Prandtl number beyond 1, while the helical model exhibits dynamo for all magnetic Prandtl number. Although the model is far from reproducing all the possible features of dynamo mechanisms, its simplicity allows a very detailed study and the observed dynamo transition is shown to bear similarities with recent numerical and experimental results.

nlin.CD↗