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Megha Jain

Publications and source records attributed to Megha Jain.

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Deterministic nanofabrication for engineering nanowire quantum dot devices

Semiconductor quantum dots (QDs) are a leading platform for realising bright, wavelength-tunable sources of single and entangled photon pairs for photonic quantum technologies. Site-selected nanowire quantum dots (NWQDs) are a promising platform for fabricating such photonic devices in a scalable manner. However, implementing additional structures around the photonic nanowire while maintaining its vertical growth geometry has remained a challenge. In this work, we develop a deterministic pick-and-place technique to conduct a vertical-to-vertical transfer of NWQDs from the growth substrate to arbitrary templates. Using this transfer technique, we enhance the photon extraction efficiency to 75% by implementing a bottom gold mirror and tune the emission wavelength by 3.6 GHz via implementing electrostatic gates around the QD. Importantly, we measure low-multiphoton probability (g^(2)(0) = 0.002) and high indistinguishability (>80% for +/-100 ps) of the QD emission after the transfer process, yielding high-quality devices. These results demonstrate the repeatability and versatility of the developed transfer technique, which is an enabling step towards scalable single and entangled photon sources.

cond-mat.mes-hall

Quantum Emission in Monolayer WSe2 Transferred onto InP Nanowires

Localized quantum emitters in transition-metal dichalcogenides (TMDs) have recently emerged as solid-state candidates for on-demand sources of single photons. Due to the role of strain in the site-selective creation of TMD emitters, their hybrid integration into photonic structures such as cavities and waveguides is possible using pick-and-place methods. Here we investigate quantum emission from a hybrid structure consisting of a monolayer of WSe2 interfaced with horizontally aligned InP nanowires (NWs). Our experiments reveal multiple narrow and bright emission peaks in the 715-785 nm spectral range and g(2)(0) as low as 0.049, indicating strong antibunching and good single photon purity. The faceted nature of III-V NWs provides unique opportunities for strain engineering, including the potential for placement of emitters on the top surface for optimal coupling. Our findings pave the way for realizing hybrid quantum light sources for integrated quantum photonics that could combine III-V quantum dots with TMD emitters into a single platform.

physics.optics