arXiv subjects

Melissa Mikalsen

Publications and source records attributed to Melissa Mikalsen.

9 recordsLinked to original sources

arXiv2026

Effect of Buried-Interface Preparation for Nb Superconducting Resonators on InP

Substrate surface preparation is a key step in the fabrication of electronic devices. In III--V semiconductor platforms, e.g. used in HEMTs and lasers, removal of the native substrate oxide is extremely important, where improper removal will negatively affect end-of-line device performance. However, the impact of substrate preparation in hybrid superconductor--semiconductor (S--Sm) systems relevant to quantum information applications remains poorly understood. This study compares three surface preparations for the deposition of sputtered Nb films on InP: (i) no intentional oxide removal (control), (ii) \textit{in-situ} $\mathrm{Ar}^{+}$ milling, and (iii) S-passivation. \textit{In-situ} $\mathrm{Ar}^{+}$ milling reduces the O concentration at the metal--substrate (MS) interface, but also roughens the InP surface, increasing the effective thickness of the Nb--InP interface and promoting O incorporation through extended defects in the Nb film. S-passivation suppresses interfacial O more effectively while preserving a sharper and smoother buried interface. It also yields Nb films with higher superconducting transition temperatures and less structural damage than the $\mathrm{Ar}^{+}$-milled samples. Despite these materials improvements, the microwave response is comparable across the three preparations. At single photon powers, the highest internal quality factors, $Q_i$, are approximately $1.30\times10^{5}$ ($130\mathrm{k}$) for the control resonators, $9.7\times10^{4}$ ($97\mathrm{k}$) for the S-passivated resonators, and $8.4\times10^{4}$ ($84\mathrm{k}$) for the $\mathrm{Ar}^{+}$-milled resonators. These results suggest that the present devices are not primarily limited by dielectric loss at the buried Nb--InP interface.

cond-mat.mes-hall↗

arXiv2026

Observation of Critical Current Minimum in Super-Honeycomb Josephson Junction Arrays

Superconductor-semiconductor Josephson junction arrays are a uniquely tunable platform for studying collective quantum phenomena, particularly in the regime where localized Andreev bound states can hybridize across the lattice when the physical separation between adjacent junctions is smaller than their coherence length ($ξ_{\text{ABS}}>d_{\text{JJ}}$). Here, we investigate three distinct Al-InAs Josephson junction arrays: a square array and super-honeycomb array fabricated within this ${ξ_{\text{ABS}}>d_{\text{JJ}}}$ regime, as well as a larger-spacing super-honeycomb control device designed such that $ξ_{\text{ABS}}\lesssim\!~d_{\text{JJ}}$. Under an out-of-plane field, critical current peaks emerge at rational filling factors, reflecting stable vortex configurations in the lattices. In the super-honeycomb lattice, vortices localize to distinct non-identical plaquettes at different filling factors, as predicted by frustrated XY model simulations. A rotating in-plane field yields periodic critical current oscillations that reflect the Rashba spin-orbit coupling inherent to the InAs quantum well. Surprisingly, at $f = 1$, the closely spaced super-honeycomb array exhibits a distinct critical current minimum as the magnitude of the in-plane field increases, a signature absent in the square array and large-spacing super-honeycomb array. These results indicate that this signature is jointly influenced by the unique geometry of the super-honeycomb vortex lattice and by long-range inter-junction hybridization.

cond-mat.mes-hall↗

arXiv2026

Interplay of superconductivity and ferromagnetism in ferromagnetic semiconductor-based Josephson junctions

The interplay between superconductivity and ferromagnetism has long been pursued as a route to unconventional Josephson effects, yet suitable material platforms remain limited. Here we report Josephson junctions based on epitaxial Al/InAs/(Ga,Fe)Sb heterostructures grown by low-temperature molecular beam epitaxy, achieving atomically abrupt superconductor/semiconductor/ferromagnetic interfaces. The devices exhibit clear proximity-induced superconductivity, including multiple Andreev reflections and gate-tunable supercurrents, confirming transparent coupling across the hybrid structure. Under perpendicular magnetic fields, the junctions reveal highly unconventional Fraunhofer interference patterns with hysteresis, flux jumps, asymmetric lobe evolution, and clear nonreciprocity, providing strong evidence of induced ferromagnetism and broken time-reversal symmetry in the superconducting channel. Gate control further modulates the critical current, highlighting the semiconducting nature of the system. Our results demonstrate that ferromagnetic semiconductor heterostructures can serve as a highly tunable platform for exploring proximity-induced superconductivity and superconducting diode effects, and for advancing device concepts at the intersection of magnetism and quantum electronics.

cond-mat.supr-con↗

arXiv2026

Microwave radiometry of a quantum-critical, hybrid Josephson array

Arrays of Josephson junctions can be tuned through anomalous metallic, quantum-critical, and insulating regimes. We introduce a new experimental probe, capturing microwave radiation across all three regimes, using a two-dimensional array of superconductor-semiconductor hybrid Josephson junctions as a model system. Our approach allows in-situ calibration of the sample's circuit parameters and provides isolation from measurement back-action effects. We measure the radiation temperature of the anomalous metal, and find that it is hotter than both the quantum-critical and insulating regimes. We further show that the anomalous-metallic regime is more susceptible to additional heating than other regimes, explaining its emergence in otherwise thermalized systems. Turning to the quantum-critical regime, we discover nonlinear scaling of radiative noise with applied bias, consistent with theoretical predictions of universal non-equilibrium behavior at quantum critical points.

cond-mat.mes-hall↗

arXiv2025

Gate-tunable polarity inversions and three-fold rotation symmetry of the superconducting diode effect

The superconducting diode effect is an asymmetry in the critical current with respect to the supercurrent polarity. One impetus driving recent interest in the effect is its dependence on intrinsic or microscopic symmetry breaking mechanisms. Here, we study the superconducting diode effect in gated planar Josephson junctions fabricated on a superconductor--semiconductor heterostructure under an in-plane magnetic field. We observe two gate-driven inversions of the diode polarity in the vicinity of zero field, as well as a third-harmonic component in the dependence of the diode efficiency on the in-plane field angle. We analyze the Lifshitz invariant for an arbitrary spin--orbit coupling and show that multiple polarity inversions are possible in the presence of both linear and cubic Dresselhaus terms, where the Rashba parameter varies monotonically with gate voltage. Numerical calculations of the diode efficiency further reveal the presence of higher harmonics in its field-angle dependence in the presence of spin--orbit coupling.

cond-mat.mes-hall↗

arXiv2025

Geometric dependence of critical current magnitude and nonreciprocity in planar Josephson junctions

Planar Josephson junctions in a magnetic field exhibit the superconducting diode effect, by which the critical current magnitude depends on the polarity of the transport current. A number of different mechanisms for the effect have been proposed.Here, we study symmetric, T-shaped planar Josephson junctions with semiconducting weak links in an in-plane magnetic field perpendicular to an applied current bias. In particular, we vary the longitudinal width (i.e.\ parallel to the current) of the superconducting contacts and the voltage of an electrostatic gate. We observe an increase in both critical current and diode efficiency with increasing contact width and relate the critical current behavior to the induced coherence length of the Andreev bound states that mediate the supercurrent flow through the junction. We further observe a linear trend, with respect to inverse contact width, of the field at which the diode efficiency is maximized, which saturates as the contact width becomes large compared to the coherence length. The smaller field at which the critical current is maximized additionally exhibits a strong gate dependence. We interpret these observations in the context of multiple underlying mechanisms, including spin--orbit coupling and orbital effects.

cond-mat.mes-hall↗

arXiv2024

Molecular beam epitaxy growth of superconducting tantalum germanide

Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on tantalum superconducting qubits that show improvements over the Nb and Al counterparts, exploring Ta as an alternative superconductor in hybrid material systems is promising. Here, we study the growth of Ta on semiconducting Ge (001) substrates grown via molecular beam epitaxy. We show that at a growth temperature of 400$^{\circ}$C the Ta diffuses into the Ge matrix in a self-limiting nature resulting in smooth and abrupt surfaces and interfaces with roughness on the order of 3-7 Å as measured by atomic force microscopy and x-ray reflectivity. The films are found to be a mixture of Ta$_{5}$Ge$_{3}$ and TaGe$_{2}$ binary alloys and form a native oxide that seems to form a sharp interface with the underlying film. These films are superconducting with a $T_{C}\sim 1.8-2$K and $H_{C}^{\perp} \sim 1.88T$, $H_{C}^{\parallel} \sim 5.1T$. These results show this tantalum germanide film to be promising for future superconducting quantum information platforms.

cond-mat.mes-hall↗

arXiv2024

Machine learning analysis of structural data to predict electronic properties in near-surface InAs quantum wells

Semiconductor crosshatch patterns in thin film heterostructures form as a result of strain relaxation processes and dislocation pile-ups during growth of lattice mismatched materials. Due to their connection with the internal misfit dislocation network, these crosshatch patterns are a complex fingerprint of internal strain relaxation and growth anisotropy. Therefore, this mesoscopic fingerprint not only describes the residual strain state of a near-surface quantum well, but also could provide an indicator of the quality of electron transport through the material. Here, we present a method utilizing computer vision and machine learning to analyze AFM crosshatch patterns that exhibits this correlation. Our analysis reveals optimized electron transport for moderate values of $λ$ (crosshatch wavelength) and $ε$ (crosshatch height), roughly 1 $μ$m and 4 nm, respectively, that define the average waveform of the pattern. Simulated 2D AFM crosshatch patterns are used to train a machine learning model to correlate the crosshatch patterns to dislocation density. Furthermore, this model is used to evaluate the experimental AFM images and predict a dislocation density based on the crosshatch waveform. Predicted dislocation density, experimental AFM crosshatch data, and experimental transport characterization are used to train a final model to predict 2D electron gas mean free path. This model shows electron scattering is strongly correlated with elastic effects (e.g. dislocation scattering) below 200 nm $λ_{MFP}$.

cond-mat.mes-hall↗

arXiv2024

Microwave Andreev bound state spectroscopy in a semiconductor-based Planar Josephson junction

By coupling a semiconductor-based planar Josephson junction to a superconducting resonator, we investigate the Andreev bound states in the junction using dispersive readout techniques. Using electrostatic gating to create a narrow constriction in the junction, our measurements unveil a strong coupling interaction between the resonator and the Andreev bound states. This enables the mapping of isolated tunable Andreev bound states, with an observed transparency of up to 99.94\% along with an average induced superconducting gap of $\sim 150 μ$eV. Exploring the gate parameter space further elucidates a non-monotonic evolution of multiple Andreev bound states with varying gate voltage. Complimentary tight-binding calculations of an Al-InAs planar Josephson junction with strong Rashba spin-orbit coupling provide insight into possible mechanisms responsible for such behavior. Our findings highlight the subtleties of the Andreev spectrum of Josephson junctions fabricated on superconductor-semiconductor heterostructures and offering potential applications in probing topological states in these hybrid platforms.

cond-mat.mes-hall↗