arXiv subjects

Mengke Liu

Publications and source records attributed to Mengke Liu.

15 recordsLinked to original sources

arXiv2026

Kondo driven suppression of charge density wave in Van der Waals material UTe$_3$

Competing electronic instabilities lie at the heart of emergent phenomena in quantum materials. In low-dimensional metals, Fermi-surface nesting can drive charge density wave (CDW) formation through a Peierls-like mechanism, while in strongly correlated systems, Kondo hybridization reconstructs the electronic structure by entangling localized moments with itinerant electrons. How these two fundamentally different instabilities interact$-$whether they coexist, compete, or mutually exclude each other$-$remains an open question. Here, we present suppression of charge density wave via the Kondo interaction in van der Waals material UTe$_3$. The angle-resolved photoemission spectroscopy (ARPES) data reveals Fermi surface nesting under similar conditions as seen in RETe$_3$ compounds. Despite that, no CDW is found in UTe$_3$ after an extensive search. We demonstrate that strong hybridization between U 5$f$ electrons and Te $p$ states reconstructs the low-energy electronic structure, removes the instability, and preempts CDW formation. Our results reveal a rare example where Kondo hybridization preempts density wave formation, offering a new route to controlling ordering phenomena in correlated 2D materials.

cond-mat.str-el↗

arXiv2026

Kondo Reshapes Multiple Orders in a $5f$ van der Waals Material

Electron interactions can drive magnetism, superconductivity, and topology. However, the realization of these phases remains limited in van der Waals materials, and the full landscape of strong correlations remains uncharted in any context. While interactions between conduction electrons and localized spins yield a well-known competition between heavy fermions (Kondo hybridization) and magnetic order (RKKY exchange), such spin-driven competition represents only part of the correlated electron phase diagram. Here we demonstrate that a heavy-fermion state can also compete with charge order, such as the charge density wave (CDW) state typical in the van der Waals $4f$ rare-earth tritellurides (RTe$_3$). We exploit the spatially-extended $5f$ orbitals of $\beta$-UTe$_3$ to enhance Kondo hybridization compared to its isostructural RTe$_3$ cousins. Our scanning tunneling spectroscopy on $\beta$-UTe$_3$ shows Fano resonances characteristic of the heavy fermion state, while our quasiparticle interference imaging reveals the disappearance of Fermi-level nesting and the appearance of flat bands. We extend the tritelluride tight-binding model to include Kondo coupling and quantify the Fermi surface reconstruction. Consistent with the destruction of nesting, we observe no CDW in $\beta$-UTe$_3$. Our expansion of the Kondo phase diagram beyond spin-mediated competition opens new possibilities for proximity-induced phase engineering in correlated van der Waals heterostructures.

cond-mat.str-el↗

arXiv2026

Layer-dependent antiferromagnetic Chern and axion insulating states in UOTe

Magnetic topological insulators have received significant interest due to their dissipationless edge states, which promise advances in energy-efficient electronic transport. However, the magnetic topological insulator state has typically been found in ferromagnets (FMs) that suffer from low magnetic ordering temperatures and stray fields. Identifying an antiferromagnetic topological insulator that exhibits the quantum anomalous Hall effect (QAHE) with a relatively high N\'eel temperature has been a longstanding challenge. Here, we focus on the recently discovered van der Waals (vdW) antiferromagnet (AFM) UOTe, which not only features a high N\'eel temperature ($\sim$150K) but also exhibits intriguing Kondo interaction and topological characteristics. Our systematic analysis of the layer-dependent topological phases based on \textit{ab} initio computations predicts the two-layer UOTe film to be an ideal 2D AFM Chern insulator in which the Hall conductivity is quantized with a fully compensated spin magnetization. By applying an in-plane strain or electric field, we show how the itinerancy of U-5f electrons can be manipulated to trigger a transition between the nontrivial ($C = 1$) and trivial ($C = 0$) phases. Interestingly, the 3-layer UOTe film is found to have zero charge conductance but it hosts a quantized spin Hall conductivity (SHC) with finite magneto-electric coupling, suggesting the presence of an axion insulator-like state. The unique magnetic structure of UOTe supports a layer-tunable topology in which films with an odd number of layers are axion-like insulators, while films with an even number of layers are Chern insulators, and the bulk material is a Dirac semimetal. Our study offers a new intrinsic AFM materials platform for realizing correlated topological phases for next-generation spintronics applications and fundamental science studies.

cond-mat.mtrl-sci↗

arXiv2024

UOTe: Kondo-interacting topological antiferromagnet in a van der Waals lattice

Since the initial discovery of two-dimensional van der Waals (vdW) materials, significant effort has been made to incorporate the three properties of magnetism, band structure topology, and strong electron correlations $-$ to leverage emergent quantum phenomena and expand their potential applications. However, the discovery of a single vdW material that intrinsically hosts all three ingredients has remained an outstanding challenge. Here we report the discovery of a Kondo-interacting topological antiferromagnet in the vdW 5$f$ electron system UOTe. It has a high antiferromagnetic (AFM) transition temperature of 150 K, with a unique AFM configuration that breaks the combined parity and time reversal ($PT$) symmetry in an even number of layers while maintaining zero net magnetic moment. Our angle-resolved photoemission spectroscopy (ARPES) measurements reveal Dirac bands near the Fermi level, which combined with our theoretical calculations demonstrate UOTe as an AFM Dirac semimetal. Within the AFM order, we observed the presence of the Kondo interaction, as evidenced by the emergence of a 5$f$ flat band near the Fermi level below 100 K and hybridization between the Kondo band and the Dirac band. Our density functional theory calculations in its bilayer form predict UOTe as a rare example of a fully-compensated AFM Chern insulator.

cond-mat.str-el↗

arXiv2023

Atomistic Control in Molecular Beam Epitaxy Growth of Intrinsic Magnetic Topological Insulator MnBi2Te4

Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of high-quality MnBi2Te4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in-situ characterization techniques, we obtain critical insights into the atomic-level control of MnBi2Te4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses. Overall, these results establish a foundation for understanding the growth dynamics of MnBi2Te4 and pave the way for the future applications of MBE in emerging topological quantum materials.

cond-mat.mtrl-sci↗

arXiv2022

Confined monolayer Ag as a large gap 2D semiconductor and its momentum resolved excited states

2D materials have intriguing quantum phenomena that are distinctively different from their bulk counterparts. Recently, epitaxially synthesized wafer-scale 2D metals, composed of elemental atoms, are attracting attention not only for their potential applications but also for exotic quantum effects such as superconductivity. By mapping momentum-resolved electronic states using time-resolved and angle-resolved photoemission spectroscopy (ARPES), we reveal that monolayer Ag confined between bilayer graphene and SiC is a large gap (> 1 eV) 2D semiconductor, consistent with GW-corrected density functional theory. The measured valence band dispersion matches the DFT-GW quasiparticle band. However, the conduction band dispersion shows an anomalously large effective mass of 2.4 m0. Possible mechanisms for this large enhancement in the apparent mass are discussed.

cond-mat.mtrl-sci↗

arXiv2022

Visualizing the interplay of Dirac mass gap and magnetism at nanoscale in intrinsic magnetic topological insulators

In intrinsic magnetic topological insulators, Dirac surface state gaps are prerequisites for quantum anomalous Hall and axion insulating states. Unambiguous experimental identification of these gaps has proved to be a challenge, however. Here we use molecular beam epitaxy to grow intrinsic MnBi2Te4 thin films. Using scanning tunneling microscopy/spectroscopy, we directly visualize the Dirac mass gap and its disappearance below and above the magnetic order temperature. We further reveal the interplay of Dirac mass gaps and local magnetic defects. We find that in high defect regions, the Dirac mass gap collapses. Ab initio and coupled Dirac cone model calculations provide insight into the microscopic origin of the correlation between defect density and spatial gap variations. This work provides unambiguous identification of the Dirac mass gap in MnBi2Te4, and by revealing the microscopic origin of its gap variation, establishes a material design principle for realizing exotic states in intrinsic magnetic topological insulators.

cond-mat.mes-hall↗

arXiv2022

Creating a Nanoscale Lateral Heterojunction in a Semiconductor Monolayer with a Large Built-in Potential

The ability to engineer atomically thin nanoscale lateral heterojunctions (HJs) is critical to lay the foundation for future two-dimensional (2D) device technology. However, the traditional approach to creating a heterojunction by direct growth of a heterostructure of two different materials constrains the available band offsets, and it is still unclear if large built-in potentials are attainable for 2D materials. The electronic properties of atomically thin semiconducting transition metal dichalcogenides (TMDs) are not static, and their exciton binding energy and quasiparticle band gap depend strongly on the proximal environment. Recent studies have shown that this effect can be harnessed to engineer the lateral band profile of monolayer TMDs to create a heterojunction. Here we demonstrate the synthesis of a nanoscale lateral heterojunction in monolayer MoSe2 by intercalating Se at the interface of a hBN/Ru(0001) substrate. The Se intercalation creates a spatially abrupt modulation of the local hBN/Ru work function, which is imprinted directly onto an overlying MoSe2 monolayer to create a large built-in potential of 0.83 eV. We spatially resolve the MoSe2 band profile and work function using scanning tunneling spectroscopy to map out the nanoscale depletion region. The Se intercalation also modifies the dielectric environment, influencing the local band gap renormalization and increasing the MoSe2 band gap by ~0.26 eV. This work illustrates that environmental proximity engineering provides a robust method to indirectly manipulate the band profile of 2D materials outside the limits of their intrinsic properties, providing avenues for future device design.

cond-mat.mtrl-sci↗

arXiv2021

Influence of nano-hole defects and their geometric arrangements on the superfluid density in atomically thin single crystals of indium superconductor

Using Indium on Si(111) as an atomically thin superconductor platform, and by systematically controlling the density of nano-hole defects (nanometer size voids), we reveal the impacts of defects density and defects geometric arrangements on superconductivity at macroscopic and microscopic length scales. When nano-hole defects are uniformly dispersed in the atomic layer, the superfluid density monotonically decreases as a function of defect density (from 0.7% to 5% of the surface area) with minor change in the transition temperature Tc, measured both microscopically and macroscopically. With a slight increase in the defect density from 5% to 6%, these point defects are organized into defect chains that enclose individual two-dimensional patches. This new geometric arrangement of defects dramatically impacts the superconductivity, leading to the total disappearance of macroscopic superfluid density and the collapse of the microscopic superconducting gap. This study sheds new light on the understanding of how local defects and their geometric arrangement impact superconductivity in the two-dimensional limit.

cond-mat.supr-con↗

arXiv2021

PTCDA molecular monolayer on Pb thin films: An unusual π-electron Kondo system and its interplay with a quantum-confined superconductor

The hybridization of magnetism and superconductivity has been an intriguing playground for correlated electron systems, hosting various novel physical phenomena. Usually, localized d- or f-electrons are central to magnetism. In this study, by placing a PTCDA (3,4,9,10-perylene tetracarboxylic dianhydride) molecular monolayer on ultra-thin Pb films, we built a hybrid magnetism/superconductivity (M/SC) system consisting of only sp electronic levels. The magnetic moments reside in the unpaired molecular orbital originating from interfacial charge-transfers. We reported distinctive tunneling spectroscopic features of such a Kondo screened pi-electron impurity lattice on a superconductor in the regime of TK>>delta suggesting the formation of a two-dimensional bound states band. Moreover, moiré superlattices with tunable twist angle and the quantum confinement in the ultra-thin Pb films provide easy and flexible implementations to tune the interplay between the Kondo physics and the superconductivity, which are rarely present in M/SC hybrid systems.

cond-mat.supr-con↗

arXiv2021

Monolayer 1T-NbSe2 as a 2D correlated magnetic insulator

Monolayer group-V transition metal dichalcogenides in their 1T phase have recently emerged as a platform to investigate rich phases of matter, such as spin liquid and ferromagnetism, resulting from strong electron correlations. Although 1T phase NbSe2 does not occur naturally in bulk form, it has been discovered that the 1T and 1H phases can coexist when monolayer NbSe2 is grown via molecular beam epitaxy (MBE). This discovery has inspired theoretical investigations predicting collective phenomena such as ferromagnetism in two dimensions. Here, by controlling the MBE growth parameters, we demonstrate the successful growth of single-phase 1T-NbSe2. By combining scanning tunneling microscopy/spectroscopy and ab initio calculations, we show that this system is a charge-transfer insulator, with the upper Hubbard band located above the valence band maximum. Furthermore, by creating a vertical 1T/2H NbSe2 heterostructure, we find evidence of exchange interactions between the localized magnetic moments in 1T phase and the metallic/superconducting phase, as manifested by Kondo resonances and Yu-Shiba-Rusinov bound states.

cond-mat.str-el↗

arXiv2020

Robust Lateral Control of a Convoy of Autonomous & Connected Vehicles with Limited Preview

This paper addresses the lateral control of Autonomous & Connected Vehicles (ACVs) convoys during Emergency Lane Change (ELC) maneuvers. These maneuvers are initiated in response to emergency cues from either the front or rear of the convoy, responding to the need to avoid obstacles or facilitate the passage of other vehicles. The primary objective of this study is to develop a lateral control scheme for ACVs based on the available information. The foundational assumption in this study is the existence of reliable connectivity among ACVs, wherein each subsequent ACV possesses information concerning the GPS position traces of both the lead and immediately preceding vehicles within the convoy. This connectivity facilitates the construction of a composite ELC trajectory that synthesizes this information, serving as a "discretized" preview of the trajectory to be tracked. The procedural steps include constructing this composite trajectory, determining cross-track error, heading, and yaw rate errors relative to it, and subsequently formulating a lateral control strategy. Furthermore, the paper presents findings on the lateral string stability of ACV convoys across various scenarios, encompassing changes in longitudinal velocity and scenarios where lead vehicle information is unavailable. Numerical and experimental results validate the efficacy of the proposed lateral control scheme for ACV convoys.

eess.SY↗

arXiv2020

Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2

The emergence of transition metal dichalcogenides (TMD) as crystalline atomically thin semiconductors has created a tremendous amount of scientific and technological interest. Many novel device concepts have been proposed and realized (1-3). Nonetheless, progress in k-space investigations of ground/excited state electronic structures has been slow due to the challenge to create large scale, laterally homogeneous samples. Taking advantage of recent advancements in chemical vapor deposition, here we create a wafer-size MoS2 monolayer with well-aligned lateral orientation for advanced electron spectroscopy studies (4-6). Low energy electron diffraction and scanning tunneling microscopy (STM) demonstrate atomically clean surfaces with in-plane crystalline orientation. The ground state and excited state electronic structures are probed using scanning tunneling spectroscopy (STS), angle-resolved photoemission (ARPES) and time-resolved (tr-)ARPES. In addition to mapping out the momentum-space quasiparticle band structure in the valence and conduction bands, we unveil ultrafast excited state dynamics, including inter- and intra-valley carrier scattering and a rapid downward energy shift by ~ 0.2eV lower than the initial free carrier state at Sigma point.

cond-mat.mes-hall↗

arXiv2020

Epitaxial Growth of Two-dimensional Insulator Monolayer Honeycomb BeO

The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), although its bulk counterpart has a wurtzite structure. The h-BeO is grown by molecular beam epitaxy (MBE) on Ag(111) thin films that are conveniently grown on Si(111) wafers. Using scanning tunneling microscopy and spectroscopy (STM/S), the honeycomb BeO lattice constant is determined to be 2.65 angstrom with an insulating band gap of 6 eV. Our low energy electron diffraction (LEED) measurements indicate that the h-BeO forms a continuous layer with good crystallinity at the millimeter scale. Moiré pattern analysis shows the BeO honeycomb structure maintains long range phase coherence in atomic registry even across Ag steps. We find that the interaction between the h-BeO layer and the Ag(111) substrate is weak by using STS and complimentary density functional theory calculations. We not only demonstrate the feasibility of growing h-BeO monolayers by MBE, but also illustrate that the large-scale growth, weak substrate interactions, and long-range crystallinity make h-BeO an attractive candidate for future technological applications. More significantly, the ability to create a stable single crystalline atomic sheet without a bulk layered counterpart is an intriguing approach to tailoring novel 2D electronic materials.

cond-mat.mes-hall↗

arXiv2016

An in-situ method for measuring the non-linear response of a Fabry-Perot cavity

High finesse Fabry-Perot(FP) cavity is a very important frequency reference for laser stabiliza- tion, and is widely used for applications such as precision measurement, laser cooling of ions or molecules. But the non-linear response of the piezoelectric ceramic transducer (PZT) in the FP cav- ity limits the performance of the laser stabilization. Measuring and controlling such non-linearity are important. Here we report an in-situ, optical method to characterize this non-linearity by measuring the resonance signals of a dual-frequency laser. The differential measurement makes it insensitive to laser and cavity drifting, and has a very high sensitivity. It can be applied for various applications with PZT, especially in an optical lab.

physics.optics↗