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Mengwen Jia

Publications and source records attributed to Mengwen Jia.

3 recordsLinked to original sources

Imaging Antiferromagnetic Domains in Nickel-oxide Thin Films by Magneto-optical Voigt Effect

Recent demonstrations of electrical detection and manipulation of antiferromagnets (AFMs) have opened new opportunities towards robust and ultrafast spintronics devices. However, it is difficult to establish the connection between the spin-transport behavior and the microscopic AFM domain states due to the lack of the real-time AFM domain imaging technique under the electric field. Here we report a significant Voigt rotation up to 60 mdeg in thin NiO(001) films at room temperature. Such large Voigt rotation allows us to directly observe AFM domains in thin-film NiO by utilizing a wide-field optical microscope. Further complementary XMLD-PEEM measurement confirms that the Voigt contrast originates from the NiO AFM order. We examine the domain pattern evolution at a wide range of temperature and with the application of external magnetic field. Comparing to large-scale-facility techniques such as the X-ray photoemission electron microscopy, the use with a wide-field, tabletop optical imaging method enables straightforward access to domain configurations of single-layer AFMs.

cond-mat.mtrl-sci

Anisotropic Spin Relaxation Induced by Surface Spin-Orbit Effects

It is a common perception that the transport of a spin current in polycrystalline metal is isotropic and independent of the polarization direction, even though spin current is a tensorlike quantity and its polarization direction is a key variable. We demonstrate surprising anisotropic spin relaxation in mesoscopic polycrystalline Cu channels in nonlocal spin valves. For directions in the substrate plane, the spin-relaxation length is longer for spins parallel to the Cu channel than for spins perpendicular to it, by as much as 9% at 10 K. Spin-orbit effects on the surfaces of Cu channels can account for this anisotropic spin relaxation. The finding suggests novel tunability of spin current, not only by its polarization direction but also by electrostatic gating.

cond-mat.mes-hall

Spin Hall effects in mesoscopic Pt films with high resistivity

The energy efficiency of the spin Hall effects (SHE) can be enhanced if the electrical conductivity is decreased without sacrificing the spin Hall conductivity. The resistivity of Pt films can be increased to 150-300 μΩ*cm by mesoscopic lateral confinement, thereby decreasing the conductivity. The SHE and inverse spin Hall effects (ISHE) in these mesoscopic Pt films are explored at 10 K by using the nonlocal spin injection/detection method. All relevant physical quantities are determined in-situ on the same substrate, and a quantitative approach is developed to characterize all processes effectively. Extensive measurements with various Pt thickness values reveal an upper limit for the Pt spin diffusion length: λ_pt<0.8 nm. The average product of λ_pt and the Pt spin Hall angle α_H is substantial: α_H*λ_pt=(0.142 +/- 0.040)nm for 4 nm thick Pt, though a gradual decrease is observed at larger Pt thickness. The results suggest enhanced spin Hall effects in resistive mesoscopic Pt films.

cond-mat.mes-hall