Mengze Zhao | Searcharxiv

arXiv2026

The boron-hydrogen-phosphorus tri-elements co-doped stable N-type single crystalline Diamond

Diamond is an outstanding semiconductor for extreme electronics, yet reproducible n-type doping remains a long-standing challenge. Here we demonstrate stable n-type single-crystal diamond grown in a single step by a precisely controlled boron-hydrogen-phosphorus co-doping strategy. Hall measurements yield electron concentrations up to 1.0*1019 cm-3 with a resistivity as low as 0.249 ohmic.cm. Secondary-ion mass spectrometry shows that tri-elements doping is the key for achieving n-type conductivity as the electron density exceeds the incorporated phosphorus concentration and is the same level of that of hydrogen and boron concentrations, supporting a donor mechanism beyond an isolated substitutional phosphorus or just boron-hydrogen co-doping. Temperature-dependent photoluminescence (PL) reveals this tri-elements codoping method induces the impurity band, and the donor level is quite shallow around 61.6 meV, consistent with the temperature dependent resistance measurements. Moreover, the co-doped diamond also exhibits strong ultraviolet emission near 270-285 nm, and the internal quantum efficiency is estimated to be 69.4%, while the undoped diamond or only boron doped diamond shows negligible UV emission. These results establish a practical route to low-resistance high luminous n-type diamond and its based chips.

physics.app-ph↗

arXiv2024

Sliding ferroelectric memories and synapses

Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap photovoltaic devices. Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding its fundamental properties, functional devices based on sliding ferroelectrics, the key touchstone toward applications, remain elusive. Here, we demonstrate the rewritable, non-volatile memory devices at room-temperature utilizing a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer molybdenum disulfide. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8V, a high conductance ratio of above 106, a long retention time of >10 years, and a programming endurance greater than 104 cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 103 cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs. Our work demonstrates the sliding ferroelectric memories and synaptic plasticity on both rigid and flexible substrates, highlighting the great potential of sliding ferroelectrics for emerging technological applications in brain-inspired in-memory computing, edge intelligence and energy-efficient wearable electronics.

cond-mat.mes-hall↗