arXiv subjects

Michael A. McGuire

Publications and source records attributed to Michael A. McGuire.

At least 55 records · Page 3Linked to original sources

arXiv2020

Fantastic flat bands and where to find them: The CoSn-type compounds

Quantum interference on the kagome lattice generates electronic bands with narrow bandwidth, called flat bands. Crystal structures incorporating this lattice can host strong electron correlations with non-standard ingredients, but only if these bands lie at the Fermi level. In the six compounds with the CoSn structure type (FeGe, FeSn, CoSn, NiIn, RhPb, and PtTl) the transition metals form a kagome lattice. The two iron variants are robust antiferromagnets so we focus on the latter four and investigate their thermodynamic and transport properties. We consider these results and calculated band structures to locate and characterize the flat bands in these materials. We propose that CoSn and RhPb deserve the community's attention for exploring flat band physics.

cond-mat.str-el↗

arXiv2020

Physical properties and thermal stability of Fe5GeTe2 single crystals

The magnetic and transport properties of Fe-deficient Fe5GeTe2 single crystals (Fe5-xGeTe2 with x~0.3) were studied and the impact of thermal processing was explored. Quenching crystals from the growth temperature has been previously shown to produce a metastable state that undergoes a strongly hysteretic first-order transition upon cooling below ~100K. The first-order transition impacts the magnetic properties, yielding an enhancement in the Curie temperature T_C from 270 to 310K. In the present work, T_HT ~550K has been identified as the temperature above which metastable crystals are obtained via quenching. Diffraction experiments reveal a structural change at this temperature, and significant stacking disorder occurs when samples are slowly cooled through this temperature range. The transport properties are demonstrated to be similar regardless of the crystal's thermal history. The scattering of charge carriers appears to be dominated by moments fluctuating on the Fe(1) sublattice, which remain dynamic down to 100-120K. Maxima in the magnetoresistance and anomalous Hall resistance are observed near 120K. The Hall and Seebeck coefficients are also impacted by magnetic ordering on the Fe(1) sublattice. The data suggest that both electrons and holes contribute to conduction above 120K, but that electrons dominate at lower temperature when all of the Fe sublattices are magnetically ordered. This study demonstrates a strong coupling of the magnetism and transport properties in Fe5-xGeTe2 and complements the previous results that demonstrated strong magnetoelastic coupling as the Fe(1) moments order. The published version of this manuscript is DOI:10.1103/PhysRevMaterials.3.104401 (2019)

cond-mat.mtrl-sci↗

arXiv2020

Direct observation of 2D magnons in atomically thin CrI$_3$

Exfoliated chromium triiodide (CrI$_3$) is a layered van der Waals (vdW) magnetic insulator that consists of ferromagnetic layers coupled through antiferromagnetic interlayer exchange. The resulting permutations of magnetic configurations combined with the underlying crystal symmetry produces tunable magneto-optical phenomena that is unique to the two-dimensional (2D) limit. Here, we report the direct observation of 2D magnons through magneto-Raman spectroscopy with optical selection rules that are strictly determined by the honeycomb lattice and magnetic states of atomically thin CrI$_3$. In monolayers, we observe an acoustic magnon mode of ~0.3 meV with cross-circularly polarized selection rules locked to the magnetization direction. These unique selection rules arise from the discrete conservation of angular momentum of photons and magnons dictated by threefold rotational symmetry in a rotational analogue to Umklapp scattering. In bilayers, by tuning between the layered antiferromagnetic and ferromagnetic-like states, we observe the switching of two magnon modes. The bilayer structure also enables Raman activity from the optical magnon mode at ~17 meV (~4.2 THz) that is otherwise Raman-silent in the monolayer. From these measurements, we quantitatively extract the spin wave gap, magnetic anisotropy, intralayer and interlayer exchange constants, and establish 2D magnets as a new system for exploring magnon physics.

cond-mat.mes-hall↗

arXiv2020

Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures

Magnetic proximity effects are crucial ingredients for engineering spintronic, superconducting, and topological phenomena in heterostructures. Such effects are highly sensitive to the interfacial electronic properties, such as electron wave function overlap and band alignment. The recent emergence of van der Waals (vdW) magnets enables the possibility of tuning proximity effects via designing heterostructures with atomically clean interfaces. In particular, atomically thin CrI3 exhibits layered antiferromagnetism, where adjacent ferromagnetic monolayers are antiferromagnetically coupled. Exploiting this magnetic structure, we uncovered a layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe2 and bi/trilayer CrI3. By controlling the individual layer magnetization in CrI3 with a magnetic field, we found that the spin-dependent charge transfer between WSe2 and CrI3 is dominated by the interfacial CrI3 layer, while the proximity exchange field is highly sensitive to the layered magnetic structure as a whole. These properties enabled us to use monolayer WSe2 as a spatially sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains near the spin-flip transition in bilayer CrI3. Our work reveals a new way to control proximity effects and probe interfacial magnetic order via vdW engineering.

cond-mat.mes-hall↗

arXiv2020

Magnetic proximity and nonreciprocal current switching in a monolayer WTe2 helical edge

The integration of diverse electronic phenomena, such as magnetism and nontrivial topology, into a single system is normally studied either by seeking materials that contain both ingredients, or by layered growth of contrasting materials. The ability to simply stack very different two dimensional (2D) van der Waals materials in intimate contact permits a different approach. Here we use this approach to couple the helical edges states in a 2D topological insulator, monolayer WTe2, to a 2D layered antiferromagnet, CrI3. We find that the edge conductance is sensitive to the magnetization state of the CrI3, and the coupling can be understood in terms of an exchange field from the nearest and next-nearest CrI3 layers that produces a gap in the helical edge. We also find that the nonlinear edge conductance depends on the magnetization of the nearest CrI3 layer relative to the current direction. At low temperatures this produces an extraordinarily large nonreciprocal current that is switched by changing the antiferromagnetic state of the CrI3.

cond-mat.mes-hall↗

arXiv2019

Tuning Inelastic Light Scattering via Symmetry Control in 2D Magnet CrI$_3$

The coupling between spin and charge degrees of freedom in a crystal imparts strong optical signatures on scattered electromagnetic waves. This has led to magneto-optical effects with a host of applications, from the sensitive detection of local magnetic order to optical modulation and data storage technologies. Here, we demonstrate a new magneto-optical effect, namely, the tuning of inelastically scattered light through symmetry control in atomically thin chromium triiodide (CrI$_3$). In monolayers, we found an extraordinarily large magneto-optical Raman effect from an A$_{1g}$ phonon mode due to the emergence of ferromagnetic order. The linearly polarized, inelastically scattered light rotates by ~40$^o$, more than two orders of magnitude larger than the rotation from MOKE under the same experimental conditions. In CrI$_3$ bilayers, we show that the same A$_{1g}$ phonon mode becomes Davydov-split into two modes of opposite parity, exhibiting divergent selection rules that depend on inversion symmetry and the underlying magnetic order. By switching between the antiferromagnetic states and the fully spin-polarized states with applied magnetic and electric fields, we demonstrate the magnetoelectrical control over their selection rules. Our work underscores the unique opportunities provided by 2D magnets for controlling the combined time-reversal and inversion symmetries to manipulate Raman optical selection rules and for exploring emergent magneto-optical effects and spin-phonon coupled physics.

cond-mat.mes-hall↗

arXiv2019

Quasi 2-D magnetism in the Kagome layer compound FeSn

Single crystals of the single Kagome layer compound FeSn are investigated using x-ray and neutron scattering, magnetic susceptibility and magnetization, heat capacity, resistivity, Hall, Seebeck, thermal expansion, thermal conductivity measurements and density functional theory (DFT). FeSn is a planar antiferromagnet below TN = 365 K and exhibits ferromagnetic magnetic order within each Kagome layer. The in-plane magnetic susceptibility is sensitive to synthesis conditions. Resistivity, Hall and Seebeck results indicate multiple bands near the Fermi energy. The resistivity of FeSn is about 3 times lower for current along the stacking direction than in the plane, suggesting that transport and the bulk electronic structure of FeSn is not quasi 2D. FeSn is an excellent metal with Rho(300K)/Rho(2K) values about 100 in both directions. While the ordered state is antiferromagnetic, high temperature susceptibility measurements indicate a ferromagnetic Curie-Weiss temperature of 173 K, reflecting the strong in-plane ferromagnetic interactions. DFT calculations show a 3D electronic structure with the Dirac nodal lines along the K-H directions in the magnetic Brillouin zone about 0.3 eV below the Fermi energy, with the Dirac dispersions at the K points gapped by spin-orbit coupling except at the H point. The magnetism, however, is highly 2D with Jin-plane/Jout-of-plane = 10. The predicted spin-wave spectrum is presented.

cond-mat.mtrl-sci↗

arXiv2019

Switching 2D Magnetic States via Pressure Tuning of Layer Stacking

The physical properties of two-dimensional van der Waals (2D vdW) crystals depend sensitively on the interlayer coupling, which is intimately connected to the stacking arrangement and the interlayer spacing. For example, simply changing the twist angle between graphene layers can induce a variety of correlated electronic phases, which can be controlled further in a continuous manner by applying hydrostatic pressure to decrease the interlayer spacing. In the recently discovered 2D magnets, theory suggests that the interlayer exchange coupling strongly depends on layer separation, while the stacking arrangement can even change the sign of the magnetic exchange, thus drastically modifying the ground state. Here, we demonstrate pressure tuning of magnetic order in the 2D magnet CrI3. We probe the magnetic states using tunneling and scanning magnetic circular dichroism microscopy measurements. We find that the interlayer magnetic coupling can be more than doubled by hydrostatic pressure. In bilayer CrI3, pressure induces a transition from layered antiferromagnetic to ferromagnetic phases. In trilayer CrI3, pressure can create coexisting domains of three phases, one ferromagnetic and two distinct antiferromagnetic. The observed changes in magnetic order can be explained by changes in the stacking arrangement. Such coupling between stacking order and magnetism provides ample opportunities for designer magnetic phases and functionalities.

cond-mat.mes-hall↗

arXiv2019

Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator

The recent discovery of magnetism in atomically thin layers of van der Waals (vdW) crystals has created new opportunities for exploring magnetic phenomena in the two-dimensional (2D) limit. In most 2D magnets studied to date the c-axis is an easy axis, so that at zero applied field the polarization of each layer is perpendicular to the plane. Here, we demonstrate that atomically thin CrCl3 is a layered antiferromagnetic insulator with an easy-plane normal to the c-axis, that is the polarization is in the plane of each layer and has no preferred direction within it. Ligand field photoluminescence at 870 nm is observed down to the monolayer limit, demonstrating its insulating properties. We investigate the in-plane magnetic order using tunneling magnetoresistance in graphene/CrCl3/graphene tunnel junctions, establishing that the interlayer coupling is antiferromagnetic down to the bilayer. From the temperature dependence of the magnetoresistance we obtain an effective magnetic phase diagram for the bilayer. Our result shows that CrCl3 should be useful for studying the physics of 2D phase transitions and for making new kinds of vdW spintronic devices.

cond-mat.mes-hall↗

arXiv2019

Long range antiferromagnetic order in a rocksalt high entropy oxide

We report for the first time the magnetic structure of the high entropy oxide $(Mg_{0.2}Co_{0.2}Ni_{0.2}Cu_{0.2}Zn_{0.2})O$ using neutron powder diffraction. This material exhibits a sluggish magnetic transition but possesses a long-range ordered antiferromagnetic ground state, as revealed by DC and AC magnetic susceptibility, elastic and inelastic neutron scattering measurements. The magnetic propagation wavevector is k=(1/2, 1/2, 1/2) based on the cubic structure Fm-3m, and the magnetic structure consists of ferromagnetic sheets in the (111) planes with spins antiparallel between two neighboring planes. Inelastic neutron scattering reveals strong magnetic excitations at 100 K that survive up to room temperature. This work demonstrates that entropy-stabilized oxides represent a unique platform to study long range magnetic order with extreme chemical disorder.

cond-mat.mtrl-sci↗

arXiv2019

Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric

The interest in ferroelectric van der Waals crystals arises from the potential to realize ultrathin ferroic systems owing to the reduced surface energy of these materials and the layered structure that allows for exfoliation. Here, we quantitatively unravel giant negative electrostriction of van der Waals layered copper indium thiophosphate (CIPS), which exhibits an electrostrictive coefficient Q33 as high as -3.2 m4/C2 and a resulting bulk piezoelectric coefficient d33 up to -85 pm/V. As a result, the electromechanical response of CIPS is comparable in magnitude to established perovskite ferroelectrics despite possessing a much smaller spontaneous polarization of only a few uC/cm2. In the paraelectric state, readily accessible owing to low transition temperatures, CIPS exhibits large dielectric tunability, similar to widely-used barium strontium titanate, and as a result both giant and continuously tunable electromechanical response. The persistence of electrostrictive and tunable responses in the paraelectric state indicates that even few layer films or nanoparticles will sustain significant electromechanical functionality, offsetting the inevitable suppression of ferroelectric properties in the nanoscale limit. These findings can likely be extended to other ferroelectric transition metal thiophosphates and (quasi-) two-dimensional materials and might facilitate the quest towards novel ultrathin functional devices incorporating electromechanical response.

cond-mat.mtrl-sci↗

arXiv2018

Room-temperature ferromagnetic insulating state in highly cation-ordered epitaxial oxide double perovskite

Ferromagnetic insulators (FMIs) are one of the most important components in developing dissipationless electronic and spintronic devices. However, since ferromagnetism generally accompanies metallicity, FMIs are innately rare to find in nature. Here, novel room-temperature FMI films are epitaxially synthesized by deliberate control of the ratio of two B-site cations in the double perovskite Sr2FeReO6. In contrast to the known ferromagnetic metallic phase in stoichiometric Sr2FeReO6, a FMI state with a high Curie temperature (Tc~400 K) and a large saturation magnetization (MS~1.8 μB/f.u.) is found in highly cation-ordered Fe-rich phases. The stabilization of the FMI state is attributed to the formation of extra Fe3+-Fe3+ and Fe3+-Re6+ bonding states, which originate from the excess Fe. The emerging FMI state by controlling cations in the epitaxial oxide perovskites opens the door to developing novel oxide quantum materials & heterostructures.

cond-mat.mtrl-sci↗

arXiv2018

Exotic magnetic field-induced spin-superstructures in a mixed honeycomb triangular lattice system

The temperature-magnetic-field phase diagram of the mixed honeycomb triangular lattice system K$_{2}$Mn$_{3}$(VO$_{4}$)$_{2}$CO$_{3}$ is investigated by means of magnetization, heat capacity and neutron scattering measurements. The results indicate that triangular and honeycomb magnetic layers undergo sequential magnetic orderings and act as nearly independent magnetic sublattices. The honeycomb sublattice orders at about 85 K in a Neél-type antiferromagnetic structure, while the triangular sublattice displays two consecutive ordered states at much lower temperatures, 3 K and 2.2 K. The ground state of the triangular sublattice consists of a planar `Y' magnetic structure that emerges from an intermediate collinear `up-up-down' state. Applied magnetic fields parallel or perpendicular to the $c$-axis induce exotic ordered phases characterized by various spin-stacking sequences of triangular layers that yield bilayer, three-layer or four-layer magnetic superstructures. The observed superstructures cannot be explained in the framework of quasi-classical theory based only on nearest-neighbor interlayer coupling and point towards the presence of effective second-nearest-neighbor interactions mediated by fluctuations of the magnetic moments in the honeycomb sublattice.

cond-mat.str-el↗

arXiv2018

Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction

Atomically thin chromium triiodide (CrI3) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of anti-aligned spin filters which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of ten or more). In addition, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work demonstrates new kinds of magnetically moderated transistor action and opens up possibilities for voltage-controlled van der Waals spintronic devices.

cond-mat.mes-hall↗

arXiv2018

Valley Manipulation by Optically Tuning the Magnetic Proximity Effect in WSe$_2$/CrI$_3$ Heterostructures

Monolayer valley semiconductors, such as tungsten diselenide (WSe$_2$), possess valley pseudospin degrees of freedom that are optically addressable but degenerate in energy. Lifting the energy degeneracy by breaking time-reversal symmetry is vital for valley manipulation. This has been realized by directly applying magnetic fields or via pseudo-magnetic fields generated by intense circularly polarized optical pulses. However, sweeping large magnetic fields is impractical for devices, and the pseudo-magnetic fields are only effective in the presence of ultrafast laser pulses. The recent rise of two-dimensional (2D) magnets unlocks new approaches to control valley physics via van der Waals heterostructure engineering. Here we demonstrate wide continuous tuning of the valley polarization and valley Zeeman splitting with small changes in the laser excitation power in heterostructures formed by monolayer WSe$_2$ and 2D magnetic chromium triiodide (CrI$_3$). The valley manipulation is realized via optical control of the CrI$_3$magnetization, which tunes the magnetic exchange field over a range of 20 T. Our results reveal a convenient new path towards optical control of valley pseudospins and van der Waals magnetic heterostructures.

cond-mat.mes-hall↗

arXiv2018

Electrical Control of 2D Magnetism in Bilayer CrI3

The challenge of controlling magnetism using electric fields raises fundamental questions and addresses technological needs such as low-dissipation magnetic memory. The recently reported two-dimensional (2D) magnets provide a new system for studying this problem owing to their unique magnetic properties. For instance, bilayer chromium triiodide (CrI3) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition. Here, we demonstrate electrostatic gate control of magnetism in CrI3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states which exhibit spin-layer locking, leading to a remarkable linear dependence of their MOKE signals on gate voltage with opposite slopes. Our results pave the way for exploring new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

cond-mat.mes-hall↗

arXiv2018

Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures

Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. These devices also show multiple resistance states as a function of magnetic field, suggesting the potential for multi-bit functionalities using an individual vdW sf-MTJ. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit, and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices.

cond-mat.mes-hall↗

arXiv2017

High-temperature magnetostructural transition in van der Waals-layered a-MoCl3

The crystallographic and magnetic properties of the cleavable 4d3 transition metal compound a-MoCl3 are reported, with a focus on the behavior above room temperature. Crystals were grown by chemical vapor transport and characterized using temperature dependent x-ray diffraction, Raman spectroscopy, and magnetization measurements. A structural phase transition occurs near 585 K, at which the Mo-Mo dimers present at room temperature are broken. A nearly regular honeycomb net of Mo is observed above the transition, and an optical phonon associated with the dimerization instability is identified in the Raman data and in first-principles calculations. The crystals are diamagnetic at room temperature in the dimerized state, and the magnetic susceptibility increases sharply at the structural transition. Moderately strong paramagnetism in the high-temperature structure indicates the presence of local moments on Mo. This is consistent with results of spin-polarized density functional theory calculations using the low- and high-temperature structures. Above the magnetostructural phase transition the magnetic susceptibility continues to increase gradually up to the maximum measurement temperature of 780 K, with a temperature dependence that suggests two-dimensional antiferromagnetic correlations.

cond-mat.mtrl-sci↗