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Michael D. McGehee

Publications and source records attributed to Michael D. McGehee.

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Electrochemical reactions under reverse bias create additional mobile ions that enable hole tunneling in metal halide perovskite diodes

Gradual reverse-bias breakdown in metal-halide perovskite diodes and solar cells is thought to originate from hole tunneling through steep bands in an ionic depletion region near the electron transport layer after positively charged iodine vacancies accumulate near the hole-transport layer (HTL). However, typical reported mobile ion concentrations near $1\times10^{17}$ cm$^{-3}$ are too small to quantitatively explain significant tunneling current densities and (Zener) breakdown observed near $-5$ V. Here, we show that inferred mobile ion concentrations increase by more than 100$\times$, to over $1\times10^{18}$ cm$^{-3}$, within just three minutes of reverse bias at $-6.0$ V in p-i-n perovskite diodes. We attribute the increase in mobile ion concentration to iodide oxidation and the resulting iodine vacancy creation which must be balanced by reduction reactions near the HTL. Thin and sub-optimal HTL coverage leads to direct contact between the transparent conducting electrode and perovskite and facilitates electron transfer and reduction, enabling the creation of even larger inferred mobile ion concentrations ($\sim1\times10^{19}$ cm$^{-3}$) and leading to faster degradation under reverse bias. This explains previous work that showed increased breakdown voltages and improved reverse-bias stability by implementing thick, uniform HTLs.

physics.app-ph

Degradation Dynamics of Perovskite Solar Cells Under Fixed Reverse Current Injection

Previous studies of reverse-bias stability in perovskite solar cells have focused primarily on voltage controlled reverse-bias tests. Here we instead present an investigation of perovskite solar cell degradation under well-defined, constant reverse-current stress. We show that the choice of hole-transport layer dictates the dominant degradation pathway: cells using thick poly(triphenylamine) (PTAA) layers with better indium-doped tin oxide (ITO) coverage can tolerate high reverse bias but quickly undergo catastrophic breakdown under fixed reverse current near their one-sun maximum power-point. In contrast, cells modified with the phosphonic-acid interface layer MeO-2PACz, with poorer ITO coverage compared to PTAA, exhibit soft, gradual, and largely recoverable degradation, regardless of the shading conditions. For MeO-2PACz devices, degradation increases with both current magnitude and duration. Importantly, when normalized by injected charge (current times duration), lower currents applied over longer times cause more severe degradation than higher currents over shorter periods. Combining electrical measurements with spatially resolved photoluminescence imaging, we argue against shunt formation and instead support an ion- and charge-mediated interfacial electrochemical degradation mode.

physics.app-ph

Architecture Optimization Dramatically Improves Reverse Bias Stability in Perovskite Solar Cells: A Role of Polymer Hole Transport Layers

We report that device architecture engineering has a substantial impact on the reverse bias instability that has been reported as a critical issue in commercializing perovskite solar cells. We demonstrate breakdown voltages exceeding -15 V in typical pin structured perovskite solar cells via two steps: i) using polymer hole transporting materials; ii) using a more electrochemically stable gold electrode. While device degradation can be exacerbated by higher reverse bias and prolonged exposure, our as-fabricated perovskite solar cells completely recover their performance even after stressing at -7 V for 9 hours both in the dark and under partial illumination. Following these observations, we systematically discuss and compare the reverse bias driven degradation pathways in perovskite solar cells with different device architectures. Our model highlights the role of electrochemical reaction rates and species in dictating the reverse bias stability of perovskite solar cells.

physics.chem-ph

Perovskite-perovskite tandem photovoltaics with optimized bandgaps

We demonstrate four and two-terminal perovskite-perovskite tandem solar cells with ideally matched bandgaps. We develop an infrared absorbing 1.2eV bandgap perovskite, $FA_{0.75}Cs_{0.25}Sn_{0.5}Pb_{0.5}I_3$, that can deliver 14.8 % efficiency. By combining this material with a wider bandgap $FA_{0.83}Cs_{0.17}Pb(I_{0.5}Br_{0.5})_3$ material, we reach monolithic two terminal tandem efficiencies of 17.0 % with over 1.65 volts open-circuit voltage. We also make mechanically stacked four terminal tandem cells and obtain 20.3 % efficiency. Crucially, we find that our infrared absorbing perovskite cells exhibit excellent thermal and atmospheric stability, unprecedented for Sn based perovskites. This device architecture and materials set will enable 'all perovskite' thin film solar cells to reach the highest efficiencies in the long term at the lowest costs.

cond-mat.mtrl-sci