arXiv subjects

Michael Galperin

Publications and source records attributed to Michael Galperin.

68 records · Page 4Linked to original sources

arXiv2006

Heat conduction in molecular transport junctions

Heating and heat conduction in molecular junctions are considered within a general NEGF formalism. We obtain a unified description of heating in current carrying molecular junctions as well as the electron and phonon contributions to the thermal flux, including their mutual influence. Ways to calculate these contributions, their relative importance and ambiguities in their definitions are discussed. A general expression for the phonon thermal flux is derived and used in a new "measuring technique", to define and quantify 'local temperature' in nonequilibrium systems. Superiority of this measuring technique over the usual approach that defines effective temperature using the equilibrium phonon distribution is demonstrated. Simple bridge models are used to illustrate the general approach, with numerical examples.

cond-mat.mes-hall↗

arXiv2006

Reply to Comment by Alexandrov and Bratkovsky [cond-mat/0603467, cond-mat/0606366]

The submitted Comment is based on using an isolated quantum dot approach to discuss the situation where the coupling to the leads is considerable (not negligible). This finite lead coupling is the situation in most molecular transport junctions. In such situations the population on the molecule is not static and dynamical effects (fluctuations) are crucial. While the discussion in [Phys. Rev. B 67, 235312 (2003)], and in the Comment may well apply for an isolated molecule, it is simply irrelevant for the very different transport situation analyzed in our original contribution.

cond-mat.mtrl-sci↗

arXiv2006

Inelastic tunneling effects on noise properties of molecular junctions

The effect of electron-phonon coupling on the current noise in a molecular junction is investigated within a simple model. The model comprises a 1-level bridge representing a molecular level that connects between two free electron reservoirs and is coupled to a vibrational degree of freedom representing a molecular vibrational mode. The latter in turn is coupled to a phonon bath that represents the thermal environment. We focus on the zero frequency noise spectrum and study the changes in its behavior under weak and strong electron-phonon interactions. In the weak coupling regime we find that the noise amplitude can increase or decrease as a result of opening of an inelastic channel, depending on distance from resonance and on junction asymmetry. In particular the relative Fano factor decreases with increasing off resonance distance and junction asymmetry. For resonant inelastic tunneling with strong electron-phonon coupling the differential noise spectrum can show phonon sidebands in addition to a central feature. Such sidebands can be observed when displaying the noise against the source-drain voltage, but not in noise vs. gate voltage plots obtained at low source-drain bias. A striking crossover of the central feature from double to single peak is found for increasing asymmetry in the molecule-leads coupling or increasing electron-phonon interaction. These variations provide a potential diagnostic tool. A possible use of noise data from scanning tunneling microscopy experiments for estimating the magnitude of the electron-phonon interaction on the bridge is proposed.

cond-mat.mes-hall↗

arXiv2006

Optical properties of current carrying molecular wires

We consider several fundamental optical phenomena involving single molecules in biased metal-molecule-metal junctions. The molecule is represented by its highest occupied and lowest unoccupied molecular orbitals, and the analysis involves the simultaneous consideration of three coupled fluxes: the electronic current through the molecule, energy flow between the molecule and electron-hole excitations in the leads and the incident and/or emitted photon flux. Using a unified theoretical approach based on the non-equilibrium Green function method we derive expressions for the absorption lineshape (not an observable but a ueful reference for considering yields of other optical processes) and for the current induced molecular emission in such junctions. We also consider conditions under which resonance radiation can induce electronic current in an unbiased junction. We find that current driven molecular emission and resonant light induced electronic currents in single molecule junctions can be of observable magnitude under appropriate realizable conditions. In particular, light induced current should be observed in junctions involving molecular bridges that are characterized by strong charge transfer optical transitions. For observing current induced molecular emission we find that in addition to the familiar need to control the damping of molecular excitations into the metal substrate the phenomenon is also sensitive to the way in which the potential bias si distributed on the junction.

cond-mat.mes-hall↗

arXiv2005

Molecular transport junctions: Current from electronic excitations in the leads

Using a model comprising a 2-level bridge connecting free electron reservoirs we show that coupling of a molecular bridge to electron-hole excitations in the leads can markedly effect the source-drain current through a molecular junction.In some cases, e.g. molecules that exhibit strong charge transfer transitions, the contribution from electron-hole excitations can exceed the Landauer elastic current and dominate the observed conduction.

cond-mat.mes-hall↗

arXiv2005

Resonant inelastic tunneling in molecular junctions

Within a phonon-assisted resonance level model we develop a self-consistent procedure for calculating electron transport currents in molecular junctions with intermediate to strong electron-phonon interaction. The scheme takes into account the mutual influence of the electron and phonon subsystems. It is based on the 2nd order cumulant expansion, used to express the correlation function of the phonon shift generator in terms of the phonon momentum Green function. Equation of motion (EOM) method is used to obtain an approximate analog of the Dyson equation for the electron and phonon Green functions in the case of many-particle operators present in the Hamiltonian. To zero-order it is similar in particular cases (empty or filled bridge level) to approaches proposed earlier. The importance of self-consistency in resonance tunneling situations (partially filled bridge level) is stressed. We confirm, even for strong vibronic coupling, a previous suggestion concerning the absence of phonon sidebands in the current vs. gate voltage plot when the source-drain voltage is small.

cond-mat.mes-hall↗

arXiv2005

Current induced light emission and light induced current in molecular tunneling junctions

The interaction of metal-molecule-metal junctions with light is considered within a simple generic model. We show, for the first time, that light induced current in unbiased junctions can take place when the bridging molecule is characterized by a strong charge-transfer transition. The same model shows current induced light emission under potential bias that exceeds the molecular excitation energy. Results based on realistic estimates of molecular-lead coupling and molecule-radiation field interaction suggest that both effects should be observable.

cond-mat.mes-hall↗

arXiv2004

Inelastic electron tunneling spectroscopy in molecular junctions: Peaks and dips

We study inelastic electron tunneling through a molecular junction using the non-equilibrium Green function (NEGF) formalism. The effect of the mutual influence between the phonon and the electron subsystems on the electron tunneling process is considered within a general self-consistent scheme. Results of this calculation are compared to those obtained from the simpler Born approximation and the simplest perturbation theory approaches, and some shortcomings of the latter are pointed out. The self-consistent calculation allows also for evaluating other related quantities such as the power loss during electron conduction. Regarding the inelastic spectrum, two types of inelastic contributions are discussed. Features associated with real and virtual energy transfer to phonons are usually observed in the second derivative of the current I with respect to the voltage when plotted against the latter. Signatures of resonant tunneling driven by an intermediate molecular ion appear as peaks in the first derivative d(current)/d(voltage) and may show phonon sidebands. The dependence of the observed vibrationally induced lineshapes on the junction characteristics, and the linewidth associated with these features are also discussed.

cond-mat.mes-hall↗

arXiv2003

Asymmetric Electron Transmission across Asymmetric Alkanethiol Bilayer Junctions

Asymmetric i/V curves with respect to the polarity of the voltage bias were observed in the Hg-Au junctions containing bilayers of alkanethiols of different chain length. Larger current resulted when a negative bias was applied to the metal carrying a longer chain alkanethiol monolayer. This behavior is simulated using a single molecule junction model, within the frameworks of the extended Huckel (EH) model and the nonequilibrium Green's function formalism at the Hartree Fock level (NEGF-HF). Qualitative agreement with the experimental results with respect to the magnitude and sign of this asymmetry is obtained. On the basis of the NEGF-HF calculation, the origin of the effect is suggested to be the asymmetric behavior of the character of the junction highest occupied molecular orbital (HOMO) at opposite biases. This change of character leads to different effective barriers for electron transfer for opposite signs of the voltage drop across the junction.

cond-mat.mes-hall↗

arXiv2002

On the electrostatic potential profile in biased molecular wires

The potential profile across a biased molecular junction is calculated within the framework of a simple Thomas-Fermi type screening model. In particular, the relationship between this profile and the lateral molecular cross section is examined. We find that a transition from a linear potential profile to a potential that drops mainly near the molecule-metal contacts occurs with increasing cross section width, in agreement with numerical quantum calculations.

physics.chem-ph↗

arXiv2002

Traversal times for resonant tunneling

The tunneling time of particle through given barrier is commonly defined in terms of "internal clocks" which effectively measure the interaction time with internal degrees of freedom of the barrier. It is known that this definition of the time scale for tunneling is not unique in the sense that it depends on the clock used to define it. For the case of resonance tunneling, a particular choice that in the limit of a high/broad square barrier yields the original result of Buttiker and Landauer (Phys. Rev. Lett. 1982, 49, 1739) is correlated to the lifetime of the resonance state. This is illustrated for analytically solvable one-dimensional double barrier models and for a realistic model of electron tunneling through a static water barrier. The latter calculation constitutes a novel application of this concept to a 3-dimensional model, and the observed structure in the energy dependence of the computed traversal time reflects the existence of transient tunneling resonances associated with instantaneous water structures. These models, characterized by the existence of shape resonances in the barrier, make it possible to examine different internal clocks that were proposed for measuring tunneling times in situations where a "clock independent" intrinsic time scale (the resonance life time) for the tunneling time exists. It is argued that this time may be used in order to estimate the relative importance of dynamical barrier processes that affect the tunneling probability.

cond-mat↗

arXiv2002

Numerical simulations of electron tunneling currents in water

This paper presents results of numerical simulations of electron tunneling through water that extend our previous calculations on such systems in several ways. First, a tip-substrate configuration is used; second, calculations are carried in the presence of an external potential bias; third, the image potential that reflects the interaction of the electron with the mobile metal electrons is taken into account in the static image approximation. Finally, all-to-all transmission probability calculations are performed in order to get an order-of-magnitude estimate of the current-voltage characteristics of this junction model. The computed currents are within the range of the few available experimental observations on scanning tunneling microscope (STM) currents in water, indicating that our calculation may have taken into account all the important physical attributes of such systems. In addition we examine the effect of the water medium on the spatial distribution of the tunneling flux. We find that while different water configurations scatter the tunneling electron in different ways, on the average the water affected loss of resolution is rather small in the deep tunneling regime but can be substantial in energy regimes where the tunneling is strongly affected by water-supported resonance structures.

cond-mat↗

arXiv2001

Inelastic effects in electron tunneling through water layers

Calculations of tunneling matrix elements associated with electron transfer through molecular environments are usually done for given frozen nuclear configurations, assuming that nuclear motions are slow relative to the timescale of a tunneling event. The motivation for this study is a recent calculation [Peskin et al, J. Chem. Phys. 111, 7558 (1999)] that indicates that electron tunneling through water may be enhanced by tunneling resonances in the range of ~1eV below the vacuum barrier and finds that the lifetimes of such resonances are in the 10fs range, same order as OH stretch periods. Our calculation is based on the absorbing-boundary-conditions-Green's-function (ABCGF) method. First we consider the effect of a single symmetric OH-stretch mode on electron tunneling in an otherwise frozen water environment and establish that the inelastic tunneling probability is small enough to justify an approach based on perturbation theory limited to single phonon transitions. Next we note that on the short timescale of a tunneling event, even under resonance conditions, water nuclear dynamics may be represented in the instantaneous normal modes picture. We generalize the ABCGF method to take into account low order inelastic scattering from a continuum of such harmonic normal modes. We find that near resonance the total inelastic transmission probability is of the same order as the elastic one, and may lead to an additional ~20-40% enhancement of the overall transmission in the range of up to 1eV below the vacuum barrier. The absolute energy exchange is small, of the order of 1% of the incident electron energy. The main contribution to the inelastic transmission is associated with energy transfer into the rotational-librational range of the water instantaneous normal mode spectrum.

cond-mat↗

arXiv2001

Traversal time for electron tunneling in water

The traversal time for tunneling is a measure of the time during which the transmitted particle can be affected by interactions localized in the barrier. The Buttiker-Landauer approach, which estimates this time by imposing an internal clock on the system, has been applied so far for relatively simple 1-dimensional models. Here we apply this approach to estimate the traversal time for electron tunneling through a realistic 3-dimensional model of a water layer. Observed structure in the energy dependence of times computed reflects the existence of transient tunneling resonances associated with instantaneous water structures.

cond-mat↗