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Michael Gottschalk

Publications and source records attributed to Michael Gottschalk.

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High-Temporal-Resolution Measurements of the Impacts of Ionizing Radiation on Superconducting Qubits

We measure the effect of ionizing radiation on superconducting qubits with a timing resolution of 1 $\mu s$ using microwave kinetic inductance detectors (MKIDs) fabricated on the same substrate. We observe no correlation between two-level system (TLS) scrambling events and ionizing radiation events detected with the MKIDs, suggesting TLS scrambling events may not arise from ionizing radiation and instead the previously reported apparent correlation may be due to events without sufficient energy to trigger our MKIDs. We characterize the fast-time system recovery of transmons following a radiation event, where we observe the recovery of the enhanced qubit relaxation and excitation to be well-described by an exponential recovery to the baseline quasiparticle density, with a characteristic time of $13\pm1\ \mu$s, and a peak quasiparticle density at the junction per deposited energy of $240/\mu m^3/MeV$. The fast recovery is consistent with literature reported values for Nb-based devices with direct injection of 2$\Delta_{\text{Al}}$ phonons, demonstrating the recovery is strongly dependent on the proximity of niobium to the junction.

quant-ph

Dirac surface states in superconductors: a dual topological proximity effect

In this paper we present scanning tunneling microscopy of Bi$_2$Se$_3$ with superconducting Nb deposited on the surface. We find that the topologically protected surface states of the Bi$_2$Se$_3$ leak into the superconducting over-layer, suggesting a dual topological proximity effect. Coupling between theses states and the Nb states leads to an effective pairing mechanism for the surface states, leading to a modified model for a topological superconductor in these systems. This model is consistent with fits between the experimental data and the theory.

cond-mat.supr-con

Evidence for nitrogen gas surface doping of the Bi$_2$Se$_3$ topological insulator

Using scanning tunneling spectroscopy we have studied the effects of nitrogen gas exposure on the bismuth selenide density of states. We observe a shift in the Dirac point which is qualitatively consistent with theoretical modeling of nitrogen binding to selenium vacancies. In carefully controlled measurements, Bi$_2$Se$_3$ crystals were initially cleaved in a helium gas environment and then exposed to a 22 SCFH flow of ultra-high purity N$_2$ gas. We observe a resulting change in the spectral curves, with the exposure effect saturating after approximately 50 minutes, ultimately bringing the Dirac point about 50 meV closer to the Fermi level. These results are compared to density functional theoretical calculations, which support a picture of $N_2$ molecules physisorbing near Se vacancies and dissociating into individual N atoms which then bind strongly to Se vacancies. In this interpretation, the binding of the N atom to a Se vacancy site removes the surface defect state created by the vacancy and changes the position of the Fermi energy with respect to the Dirac point.

cond-mat.mtrl-sci