arXiv subjects

Michael Hilke

Publications and source records attributed to Michael Hilke.

34 records · Page 2Linked to original sources

arXiv2017

Anderson Localization for Very Strong Speckle Disorder

We evaluate the localization length of the wave (or Schroedinger) equation in the presence of a disordered speckle potential. This is relevant for experiments on cold atoms in optical speckle potentials. We focus on the limit of large disorder, where the Born approximation breaks down and derive an expression valid in the "quasi-metallic" phase at large disorder. This phase becomes strongly localized and the effective mobility edge disappears.

cond-mat.dis-nn↗

arXiv2017

Probing Anderson Localization using the Dynamics of a Qubit

Anderson localization is a consequence of coherent interference of multiple scattering events in the presence of disorder, which leads to an exponential suppression of the transmission. The decay of the transmission is typically probed at a given energy or frequency. Here we show that this decay affects the dynamics of a qubit coupled to the disordered system and we express the relaxation rate of the qubit in terms of the localization properties. Conversely, adding static disorder to a channel coupled to a qubit will reduce the decoherence rate of the qubit. Hence, when designing electrodes that couple to qubits it is possible to improve their performance by adding impurities to the channel.

cond-mat.mes-hall↗

arXiv2015

Time Evolution of the Growth of Single Graphene Crystals and High Resolution Isotope Labeling

We developed a method of precise isotope labeling to visualize the continuous growth of graphene by chemical vapor deposition (CVD). This method allows us to see in real time the growth of graphene monocrystals at a resolution of a few seconds. This technique is used to extract the anisotropic growth rates, the formation of dendrites, and the dependence on adsorption area of methane on copper. We obtain a physical picture of the growth dynamics of graphene and its dependence on various parameters. Finally, our method is relevant to other CVD grown materials.

cond-mat.mtrl-sci↗

arXiv2015

Delocalization for Strong Uncorrelated Disorder

Quantum particles in a disordered potential, photons or classical waves in a random medium, or the universe expansion in a fluctuating cosmic field, all share Anderson localization as a communality. In general, localization is enhanced for strong disorder and low dimensions. In one dimension and for discrete uncorrelated random potentials, such as tight binding models, all states are localized for any disorder strength. This is in contrast to continuous random potentials, where we show here that regardless of the strength of the random potential, we have delocalization in the limit where the roughness length goes to zero. This result was obtained by deriving an expression for the localization length valid for all disorder strengths. We solved a non-linear wave equation, whose average over disorder yields the localization properties of the desired linear wave equation. Our results, not only explain the origin of the difficulty to observe localization in certain physical systems, but also show that maximum localization occurs when the roughness length is comparable to the wavelength, which is relevant to many experiments in a random medium.

cond-mat.dis-nn↗

arXiv2015

High field response of gated graphene at THz frequencies

We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged impurity scattering, respectively. We observe an increase in the transmission as the field amplitude is increased due to intraband absorption bleaching starting at fields above 8 kV/cm. This effect arises from a field-induced reduction in THz conductivity that depends strongly on the Fermi energy. We account for intraband absorption using a free carrier Drude model that includes neutral and charged impurity scattering as well as optical phonon scattering. We find that although the Fermi-level dependence in the monolayer and five-layer samples is quite different, both exhibit a strong dependence on the field amplitude that cannot be explained on the basis of an increase in the lattice temperature alone. Our results provide a deeper understanding of transport in graphene devices operating at THz frequencies and in modest kV/cm field strengths where nonlinearities exist.

cond-mat.mes-hall↗

arXiv2015

Dynamic Imaging of Au-nanoparticles via Scanning Electron Microscopy in a Graphene Wet Cell

High resolution nanoscale imaging in liquid environments is crucial for studying molecular interactions in biological and chemical systems. In particular, electron microscopy is the gold-standard tool for nanoscale imaging, but its high-vacuum requirements make application to in-liquid samples extremely challenging. Here we present a new graphene based wet cell device where high resolution SEM (scanning electron microscope) and Energy Dispersive X-rays (EDX) analysis can be performed directly inside a liquid environment. Graphene is an ideal membrane material as its high transparancy, conductivity and mechanical strength can support the high vacuum and grounding requirements of a SEM while enabling maximal resolution and signal. In particular, we obtain high resolution (< 5 nm) SEM video images of nanoparticles undergoing brownian motion inside the graphene wet cell and EDX analysis of nanoparticle composition in the liquid enviornment. Our obtained resolution surpasses current conventional silicon nitride devices imaged in both SEM and TEM under much higher electron doses.

cond-mat.soft↗

arXiv2013

Quantum Hall Effect in Fractal Graphene: Growth and Properties of Graphlocons

Highly dendritic graphene crystals up to 0.25 mm in diameter are synthesized by low pressure chemical vapor deposition inside a copper enclosure. With their sixfold symmetry and fractal-like shape, the crystals resemble snowflakes. The evolution of the dendritic growth features is investigated for different growth conditions and surface diffusion is found to be the growth-limiting step responsible for the formation of dendrites. The electronic properties of the dendritic crystals are examined down to sub-Kelvin temperatures, showing a mobility of up to 6300 cm$^2$V$^{-1}$s$^{-1}$ and quantum Hall oscillations are observed above 4T. These results demonstrate the high quality of the transport properties despite their rough dendritic edges.

cond-mat.mtrl-sci↗

arXiv2012

Weak Localisation in Clean and Highly Disordered Graphene

We look at the magnetic field induced weak localisation peak of graphene samples with different mobilities. At very low temperatures, low mobility samples exhibit a very broad peak as a function of the magnetic field, in contrast to higher mobility samples, where the weak localisation peak is very sharp. We analyze the experimental data in the context of the localisation length, which allows us to extract, both the localisation length and the phase coherence length of the samples, regardless of their mobilities. This analysis is made possible by the observation that the localisation length undergoes a generic weak localisation dependence with striking universal properties.

cond-mat.mes-hall↗

arXiv2012

Publishing an Article: A Main Goal for a Graduate Course

This essay discusses the effectiveness of a graduate course for physics students, with a course goal to write a publishable article on a modern research topic (graphene). I analyze the tools used to this end, which included Web 2.0 methods, in-class discussions and presentation, as well as extensive peer-review. In addition to producing a published article, this course led students to not only advance their mastery of a modern research topic but also to significantly improve their writing, discussion and presentation skills.

physics.ed-ph↗

arXiv2011

Experimental Phonon Band Structure of Graphene using C$^{12} and C$^{13}$ Isotopes

Using very uniform large scale chemical vapor deposition grown graphene transferred onto silicon, we were able to identify 15 distinct Raman lines associated with graphene monolayers. This was possible thanks to a combination of different carbon isotopes and different Raman laser energies and extensive averaging without increasing the laser power. This allowed us to obtain a detailed experimental phonon dispersion relation for many points in the Brillouin zone. We further identified a D+D' peak corresponding to a double phonon process involving both an inter- and intra-valley phonon.

cond-mat.mes-hall↗

arXiv2011

Experimental review of graphene

This review examines the properties of graphene from an experimental perspective. The intent is to review the most important experimental results at a level of detail appropriate for new graduate students who are interested in a general overview of the fascinating properties of graphene. While some introductory theoretical concepts are provided, including a discussion of the electronic band structure and phonon dispersion, the main emphasis is on describing relevant experiments and important results as well as some of the novel applications of graphene. In particular, this review covers graphene synthesis and characterization, field-effect behavior, electronic transport properties, magneto-transport, integer and fractional quantum Hall effects, mechanical properties, transistors, optoelectronics, graphene-based sensors, and biosensors. This approach attempts to highlight both the means by which the current understanding of graphene has come about and some tools for future contributions.

cond-mat.mes-hall↗

arXiv2011

Magneto-transport of large CVD-grown graphene

We present magnetoresistance measurements on large scale monolayer graphene grown by chemical vapor deposition (CVD) on copper. The graphene layer was transferred onto SiO2/Si via PMMA and thermal release tape for transport measurements. The resulting centimeter-sized graphene samples were measured at temperatures down to 30mK in a magnetic field. We observe a very sharp peak in resistance at zero field, which is well fitted by weak localization theory. The samples exhibit conductance fluctuations symmetric in field, which are attributed to ensemble averaged conductance fluctuations due to large scale inhomogeneities consistent with the grain boundaries of copper during the CVD growth.

cond-mat.dis-nn↗

arXiv2011

Straining Graphene by Chemical Vapour Deposition Growth on Copper

Strain can be used as an alternate way to tune the electronic properties of graphene. Here we demonstrate that it is possible to tune the uniform strain of graphene simply by changing the chemical vapor deposition growth temperature of graphene on copper. Due to the cooling of the graphene on copper system, we can induce a uniform compressive strain on graphene. The strain is analyzed by Raman spectroscopy, where a shift in the 2D peak is observed and compared to our ab initio calculations of the graphene on copper system as a function of strain.

cond-mat.mtrl-sci↗

arXiv2010

5-qubit quantum error correction in a charge qubit quantum computer

We implement the DiVincenzo-Shor 5 qubit quantum error correcting code into a solid-state quantum register. The quantum register is a multi charge-qubit system in a semiconductor environment, where the main sources of noise are phase decoherence and relaxation. We evaluate the decay of the density matrix for this multi-qubit system and perform regular quantum error corrections. The performance of the error correction in this realistic system is found to yield an improvement of the fidelity. The fidelity can be maintained arbitrarily close to one by sufficiently increasing the frequency of error correction. This opens the door for arbitrarily long quantum computations.

quant-ph↗

arXiv2009

Large contrast enhancement of graphene monolayers by angle detection

Exfoliated graphene monolayers are identified by optical inspection. In order to improve the monolayer detection, we investigate the angle dependence of the optical contrast of graphene on a 90nm SiO$_2$/Si substrate. We observe a significant enhancement of the visibility of graphene by changing the polarization and the angle of optical incidence. This method can be used to detect graphene on new substrate designs such as GaAs/AlAs based materials, which have a much cleaner surface.

cond-mat.mes-hall↗

arXiv1997

Localization Properties of the Periodic Random Anderson Model

We consider diagonal disordered one-dimensional Anderson models with an underlying periodicity. We assume the simplest periodicity, i.e., we have essentially two lattices, one that is composed of the random potentials and the other of non-random potentials. Due to the periodicity special resonance energies appear, which are related to the lattice constant of the non-random lattice. Further on two different types of behaviors are observed at the resonance energies. When a random site is surrounded by non-random sites, this model exhibits extended states at the resonance energies, whereas otherwise all states are localized with, however, an increase of the localization length at these resonance energies. We study these resonance energies and evaluate the localization length and the density of states around these energies.

cond-mat.dis-nn↗