arXiv subjects
Publications and source records attributed to Michael Hochberg.
We demonstrate low loss ridge waveguides and the first ring resonators for the mid-infrared, for wavelengths ranging from 5.4 to 5.6 μm. Structures were fabricated using electron-beam lithography on the silicon-on-sapphire material system. Waveguide losses of 4.0 +/- 0.7 dB/cm are achieved, as well as Q-values of 3.0 k.
It has recently been shown that silicon nanophotonic waveguides can be used to construct all of the components of a photonic data transmission system on a single chip. These components can be integrated together with CMOS electronics to create complex electronic-photonic integrated circuits. It has also emerged that the high field confinement of silicon nanoscale guides enables exciting new applications, from chipscale nonlinear optics to biosensors and light-force activated devices. To date, most of the experiments in silicon waveguides have been at wavelengths in the near-infrared, ranging from 1.1-2 microns. Here we show that single-mode silicon nano-waveguides can be used at mid-infrared wavelengths, in particular at 4.5 microns, or 2222.2 1/cm. This idea has appeared in theoretical literature, but experimental realization has been elusive. This result represents the first practical integrated waveguide system for the mid-infrared in silicon, and enables a range of new applications.
Although Gigahertz-scale free-carrier modulators have been previously demonstrated in silicon, intensity modulators operating at Terahertz speeds have not been reported because of silicon's weak ultrafast optical nonlinearity. We have demonstrated intensity modulation of light with light in a silicon-polymer integrated waveguide device, based on the all-optical Kerr effect - the same ultrafast effect used in four-wave mixing. Direct measurements of time-domain intensity modulation are made at speeds of 10 GHz. We showed experimentally that the ultrafast mechanism of this modulation functions at the optical frequency through spectral measurements, and that intensity modulation at frequencies in excess of 1 THz can be obtained in this device. By integrating optical polymers through evanescent coupling to high-mode-confinement silicon waveguides, we greatly increase the effective nonlinearity of the waveguide for cross-phase modulation. The combination of high mode confinement, multiple integrated optical components, and high nonlinearities produces all-optical ultrafast devices operating at continuous-wave power levels compatible with telecommunication systems. Although far from commercial radio frequency optical modulator standards in terms of extinction, these devices are a first step in development of large-scale integrated ultrafast optical logic in silicon, and are two orders of magnitude faster than previously reported silicon devices.