arXiv subjects

Michael Horn-von Hoegen

Publications and source records attributed to Michael Horn-von Hoegen.

16 recordsLinked to original sources

arXiv2026

Spot Profile Analysis Low Energy Electron Diffraction of Plasma-Enhanced Chemical Vapor Deposition Grown Epitaxial Few-Layer Graphene on Sapphire

We demonstrate the use of high-resolution spot-profile analysis low-energy electron diffraction to determine the mean grain size of plasma-enhanced chemical vapor deposition grown few-layer graphene on sapphire (Al$_2$O$_3$). The diffraction patterns exhibit broadened graphene spots, pronounced diffuse scattering, and azimuthally extended features, indicating finite crystallite size and rotational disorder. By analyzing the finite-size broadening of the specular (00) spot with an Airy-type diffraction profile, we determine a mean grain diameter of 3.7$\,$nm for the as-grown graphene layer. Post-growth annealing under ultrahigh-vacuum conditions increases the mean grain size to about 5.7$\,$nm and 6.8$\,$nm, respectively. These results establish SPA-LEED as a sensitive reciprocal-space method for quantifying the structural coherence of directly grown graphene on insulating substrates.

cond-mat.mtrl-sci↗

arXiv2026

A Two-Step Chemical Vapor Deposition Process for the Synthesis of an Ir(111)/Borophene/2D-Hexagonal Boron Nitride Heterostructure by Intrinsic Segregation

We report on a two-step ultrahigh vacuum chemical vapor deposition synthesis of a vertical Ir(111)/borophene/hexagonal boron nitride heterostructure, using borazine as a single-source precursor. The process takes advantage of the finite solubility of boron in Ir: low precursor pressure at high temperature first establishes a boron reservoir in the near-surface region of the substrate, whereas subsequent growth at higher precursor pressure promotes the formation of a closed hexagonal boron nitride monolayer. During cooldown, the reduced boron solubility drives segregation to the surface, resulting in the formation of a borophene monolayer beneath the hexagonal boron nitride overlayer. The heterostructure, with micron sized grains, homogeneously covers the entire Ir substrate. The study is performed by complementary spot profile analysis low-energy electron diffraction, low-energy electron microscopy, and scanning tunneling microscopy measurements. This intrinsic segregation-assisted growth concept provides a promising route toward scalable synthesis of high-quality, vertical heterostructures of two-dimensional materials.

cond-mat.mtrl-sci↗

arXiv2025

Ultrafast thermal boundary conductance under large temperature discontinuities of ultrathin epitaxial Pb films on Si(111)

Heat transfer is a critical aspect of modern electronics, and a deeper understanding of the underlying physics is essential for building faster, smaller, and more powerful devices with an improved performance and efficiency. In such nanoscale structures, the heat transfer between two materials is limited by the finite thermal boundary conductance across their interface. Using ultrafast electron diffraction under grazing incidence we investigated the heat transfer from ultrathin epitaxial Pb films to an Si(111) substrate under strong non-equilibrium conditions. Applying an intense femtosecond laser pulse, the 5-7 ML thin Pb film experiences a strong heat up by 10-120 K while the Si substrate remains cold at $\approx$ 10 K. At such large temperature discontinuities we observe a significantly faster cooling for stronger excited Pb films. The decrease of the corresponding cooling time constant is explained through the thermal boundary conductance in the framework of the diffuse mismatch model. The thermal boundary conductance is reduced by more than a factor of three in comparison with Pb films grown on H-terminated substrates, pointing out the importance of the morphology of substrate, heterofilm and their interface.

cond-mat.mes-hall↗

arXiv2025

Kibble-Zurek dynamics in the anisotropic Ising model of the Si(001) surface

As a simplified description of the non-equilibrium dynamics of buckled dimers on the Si(001) surface, we consider the anisotropic 2D Ising model and study the freezing of spatial correlations during a cooling quench across the critical point. Depending on the cooling rate, we observe a crossover from 1D to 2D behavior. For rapid cooling, we find effectively 1D behavior in the strongly coupled direction, for which we provide an exact analytic solution of the non-equilibrium dynamics. For slower cooling rates, we start to see 2D behavior where our numerical simulations show an approach to the usual Kibble-Zurek scaling in 2D.

cond-mat.stat-mech↗

arXiv2024

Implementation and performance of a fiber-coupled CMOS camera in an ultrafast reflective high-energy electron diffraction experiment

The implementation of a monolithic fiber-optically coupled CMOS-based TemCam-XF416 camera into our ultra-high vacuum (UHV) ultrafast reflection high-energy electron diffraction setup is reported. A combination of a pumpable gate valve and a self-built cooling collar allows UHV conditions to be reached without the need to remove the heat-sensitive device. The water-cooled collar is mounted to the camera housing and prevents heating of the detector upon bake-out of the UHV chamber. The TemCam provides an one order of magnitude higher spatial resolution than the previously used microchannel plate (MCP) based detector (Burle Chevron 3040FM) which enables a 30% higher resolution in reciprocal space. The low background intensity and the 4$\times$ lager dynamic range enables analysis of the diffuse intensity of the diffraction pattern like Kikuchi lines and bands. A key advantage over the previous MCP detector is the complete absence of the blooming effect, which enables the quantitative spot profile analysis of the diffraction spots. The inherent light sensitivity in an optical pump experiment can be overcome by using photons with hν < 1.12 eV, i.e., the indirect band gap of silicon, or by shielding any stray light.

cond-mat.mes-hall↗

arXiv2024

Critical behavior of the dimerized Si(001) surface: Continuous order-disorder phase transition in the two-dimensional Ising universality class

The critical behavior of the order-disorder phase transition in the buckled dimer structure of the Si(001) surface is investigated both theoretically by means of first-principles calculations and experimentally by spot profile analysis low-energy electron diffraction (SPA-LEED). We use density functional theory (DFT) with three different functionals commonly used for Si to determine the coupling constants of an effective lattice Hamiltonian describing the dimer interactions. Experimentally, the phase transition from the low-temperature $c(4 {\times} 2)$- to the high-temperature $p(2 {\times} 1)$-reconstructed surface is followed through the intensity and width of the superstructure spots within the temperature range 78-400 K. Near the critical temperature $T_c = 190.6\,\mathrm{K}$, we observe universal critical behavior of spot intensities and correlation lengths which falls into the universality class of the two-dimensional (2D) Ising model. From the ratio of correlation lengths along and across the dimer rows we determine effective nearest-neighbor couplings of an anisotropic 2D Ising model, $J_\parallel = (-24.9 \pm 0.9_\mathrm{stat} \pm 1.3_\mathrm{sys})\,\mathrm{meV}$ and $J_\perp = (-0.8 \pm 0.1_\mathrm{stat})\,\mathrm{meV}$. We find that the experimentally determined coupling constants of the Ising model can be reconciled with those of the more complex lattice Hamiltonian from DFT when the critical behavior is of primary interest. The anisotropy of the interactions derived from the experimental data via the 2D Ising model is best matched by DFT calculations using the PBEsol functional. The trends in the calculated anisotropy are consistent with the surface stress anisotropy predicted by the DFT functionals, pointing towards the role of surface stress reduction as a driving force for establishing the $c(4 {\times} 2)$-reconstructed ground state.

cond-mat.mes-hall↗

arXiv2023

Cool Cooling Collar for Bake-Out of Temperature-Sensitive Devices

A combination of a pumpable gate valve and a self-built cooling collar permits bake-out of an ultra-high vacuum chamber without having to dismount sensitive equipment. A small pump port on the closed gate valve maintains ultra-high vacuum conditions for a TVIPS TemCam-XF416 imaging electron detector in the case of venting the main chamber. The water-cooled collar mounted to the detector housing prevents heating of the detector upon bake-out of the ultra-high vacuum chamber.

physics.ins-det↗

arXiv2023

Disentangling the Electronic and Lattice Contributions to the Dielectric Response of Photoexcited Bismuth

Elucidating the interplay between nuclear and electronic degrees of freedom that govern the complex dielectric behavior of materials under intense photoexcitation is essential for tailoring optical properties on demand. However, conventional transient reflectivity experiments have been unable to differentiate between real and imaginary components of the dielectric response, omitting crucial electron-lattice interactions. Utilizing thin film interference we unambiguously determined the photoinduced change in complex dielectric function in the Peierls semimetal bismuth and examined its dependence on the excitation density and nuclear motion of the A$_{1g}$ phonon. Our modeled transient reflectivity data reveals a progressive broadening and redshift of Lorentz oscillators with increasing excitation density and underscores the importance of both, electronic and nuclear coordinates in the renormalization of interband transitions.

cond-mat.mtrl-sci↗

arXiv2023

Momentum space separation of quantum path interferences between photons and surface plasmon polaritons in nonlinear photoemission microscopy

Quantum path interferences occur whenever multiple equivalent and coherent transitions result in a common final state. Such interferences strongly modify the probability of a particle to be found in that final state, a key concept of quantum coherent control. When multiple nonlinear and energy-degenerate transitions occur in a system, the multitude of possible quantum path interferences is hard to disentangle experimentally. Here, we analyze quantum path interferences during the nonlinear emission of electrons from hybrid plasmonic and photonic fields using time-resolved photoemission electron microscopy. We experimentally distinguish quantum path interferences by exploiting the momentum difference between photons and plasmons and through balancing the relative contributions of their respective fields. Our work provides a fundamental understanding of the nonlinear photon-plasmon-electron interaction. Distinguishing emission processes in momentum space, as introduced here, will ultimately allow nano-optical quantum-correlations to be studied without destroying the quantum path interferences.

cond-mat.mes-hall↗

arXiv2023

A modular table-top setup for ultrafast X-ray diffraction

We present a table-top setup for femtosecond time-resolved X-ray diffraction based on a Cu Kα (8.05 keV) laser driven plasma X-ray source. Due to its modular design it provides high accessibility to its individual components (e.g. X-ray optics and sample environment). The Kα-yield of the source is optimized using a pre-pulse scheme. A magnifying multilayer X-ray mirror with Montel-Helios geometry is used to collect the emitted radiation, resulting in a quasi-collimated flux of more than 105 Cu Kα photons/pulse impinging on the sample under investigation at a repetition rate of 10 Hz. A gas ionization chamber detector is placed right after the X-ray mirror and used for normalization of the diffraction signals enabling the measurement of relative signal changes of less than 1% even at the given low repetition rate. Time-resolved diffraction experiments on laser-excited epitaxial Bi films serve as an example to demonstrate the capabilities of the set-up. The set-up can also be used for Debye-Scherrer type measurements on poly-crystalline samples.

cond-mat.mtrl-sci↗

arXiv2023

Dimer Coupling Energies of the Si(001) Surface

The coupling energies between the buckled dimers of the Si(001) surface were determined through analysis of the anisotropic critical behavior of its order-disorder phase transition. Spot profiles in high-resolution low-energy electron diffraction as a function of temperature were analyzed within the framework of the anisotropic two-dimensional Ising model. The validity of this approach is justified by the large ratio of correlation lengths, $ξ_\parallel^+/ξ_\perp^+ = 5.2$ of the fluctuating $c(4 {\times} 2)$ domains above the critical temperature $T_\mathrm{c} = (190.6 \pm 10)$ K. We obtain effective couplings $J_\parallel = (-24.9 \pm 1.3)$ meV along the dimer rows and $J_\perp = (-0.8 \pm 0.1)$ meV across the dimer rows, i.e., antiferromagnetic-like coupling of the dimers with $c(4 {\times} 2)$ symmetry.

cond-mat.mes-hall↗

arXiv2022

Ultrafast transport mediated homogenization of photoexcited electrons governs the softening of the $A_\mathrm{1g}$ phonon in bismuth

In order to determine the role of non-thermal transport of hot carriers which is decisive for the dissipation of energy in condensed matter we performed time-resolved broadband femtosecond transient reflectivity measurements on $7-197 \mathrm{nm}$ thick Bi(111) films epitaxially grown on Si(111). We monitored the behavior of the Fourier amplitude and the central frequency of the coherent $A_\mathrm{1g}$ phonon mode as function of the incident fluence, film thickness, and probe wavelength in the range of $580 -700 \mathrm{nm}$. The frequency redshift that follows photoexcitation was used as a robust quantity to determine the effective distribution of excited carriers that governs the displacive excitation mechanism of coherent $A_\mathrm{1g}$ phonons in Bi. For Bi films up to $50 \mathrm{nm}$ thickness a homogeneous excitation due to the ultrafast transport of hot charge carriers is observed, limited by a carrier penetration depth of $60 \mathrm{nm}$ independent of the totally deposited laser energy.

cond-mat.mtrl-sci↗

arXiv2019

Equilibrium shape of single-layer hexagonal boron nitride islands on low-index metal substrates

Large, high-quality layers of hexagonal boron nitride (hBN) are a prerequisite for further advancement in scientific investigation and technological utilization of this exceptional 2D material. Here we address this demand by investigating chemical vapor deposition synthesis of hBN on an Ir(111) substrate, and focus on the substrate morphology, more specifically mono-atomic steps that are always present on all catalytic surfaces of practical use. From low-energy electron microscopy and atomic force microscopy data, we are able to set up an extended Wulff construction scheme and provide a clear elaboration of different interactions governing the equilibrium shapes of the growing hBN islands that deviate from the idealistic triangular form. Most importantly, intrinsic hBN edge energy and interaction with the iridium step edges are examined separately, revealing in such way the importance of substrate step morphology for the island structure and the overall quality of 2D materials.

cond-mat.mes-hall↗

arXiv2018

Lateral heterostructures of hexagonal boron nitride and graphene: BCN alloy formation and microstructuring mechanism

Integration of individual two-dimensional materials into heterostructures is a crucial step which enables development of new and technologically interesting functional systems of reduced dimensionality. Here, well-defined lateral heterostructures of hexagonal boron nitride and graphene are synthesized on Ir(111) by performing sequential chemical vapor deposition from borazine and ethylene in ultra-high vacuum. Low-energy electron microscopy (LEEM) and selected-area electron diffraction (μ-LEED) show that the heterostructures do not consist only of hexagonal boron nitride (an insulator) and graphene (a conductor), but that also a 2D alloy made up of B, C, and N atoms (a semiconductor) is formed. Composition and spatial extension of the alloy can be tuned by controlling the parameters of the synthesis. A new method for in situ fabrication of micro and nanostructures based on decomposition of hexagonal boron nitride is experimentally demonstrated and modeled analytically, which establishes a new route for production of BCN and graphene elements of various shapes. In this way, atomically-thin conducting and semiconducting components can be fabricated, serving as a basis for manufacturing more complex devices.

cond-mat.mes-hall↗

arXiv2017

Microanalysis of single-layer hexagonal boron nitride islands on Ir(111)

Large hexagonal boron nitride (hBN) single-layer islands of high crystalline quality were grown on Ir(111) via chemical vapor deposition (CVD) and have been studied with low-energy electron microscopy (LEEM). Two types of hBN islands have been observed that structurally differ in their shape and orientation with respect to iridium, where the former greatly depends on the iridium step morphology. Photoemission electron microscopy (PEEM) and IV-LEEM spectroscopy revealed that the two island types also exhibit different work functions and bindings to iridium, which provides an explanation for differences in their shape and growth modes. In addition, various temperatures were used for the CVD synthesis of hBN, and it was found that at temperatures higher than ~950 °C boron atoms, originating either from decomposed borazine molecules or disintegrated hBN islands, can form additional compact reconstructed regions. The presented results are important for advancement in synthesis of high-quality hBN and other boron-based layered materials, and could therefore expedite their technological implementation.

cond-mat.mes-hall↗

arXiv2009

In situ observation of stress relaxation in epitaxial graphene

Upon cooling, branched line defects develop in epitaxial graphene grown at high temperature on Pt(111) and Ir(111). Using atomically resolved scanning tunneling microscopy we demonstrate that these defects are wrinkles in the graphene layer, i.e. stripes of partially delaminated graphene. With low energy electron microscopy (LEEM) we investigate the wrinkling phenomenon in situ. Upon temperature cycling we observe hysteresis in the appearance and disappearance of the wrinkles. Simultaneously with wrinkle formation a change in bright field imaging intensity of adjacent areas and a shift in the moire spot positions for micro diffraction of such areas takes place. The stress relieved by wrinkle formation results from the mismatch in thermal expansion coefficients of graphene and the substrate. A simple one-dimensional model taking into account the energies related to strain, delamination and bending of graphene is in qualitative agreement with our observations.

cond-mat.mes-hall↗