arXiv subjects

Michael I. Faley

Publications and source records attributed to Michael I. Faley.

2 recordsLinked to original sources

arXiv2026

Anisotropy-driven interfacial magnetism in Ru-deficient SrRuO$_3$ thin films

While stoichiometric SrRuO$_3$ (SRO) is a metallic itinerant ferromagnet with relatively homogeneous magnetization, Ru deficiency provides a powerful route to alter its electronic transport and depth-dependent magnetic properties. Ru-deficient SRO thin films grown by radio-frequency high oxygen pressure sputtering were investigated using a combination of X-ray reflectivity, polarized neutron reflectometry, off-specular neutron scattering, scanning transmission electron microscopy with energy-dispersive X-ray spectroscopy, electrical transport, and magnetometry. Structural and compositional analyses reveal that Ru deficiency is intrinsic to the films, with an enhanced deficiency at the interfaces. As a result, coherent electronic transport is suppressed and the saturation magnetization is reduced, while the Curie temperature remains largely unaffected, placing Ru-deficient SRO in a regime consistent with ferromagnetic insulator-like behavior. Depth- and lateral-resolved magnetic measurements further show that the interfacial regions remain ferromagnetic but exhibit enhanced perpendicular magnetic anisotropy, which constrains the local magnetization to remain predominantly out-of-plane and strongly reduces its in-plane projection. Our results establish Ru deficiency as a key control parameter governing transport, magnetization, and anisotropy in SRO thin films and highlight defect and interface engineering as powerful routes to tailor interfacial magnetism in correlated oxide heterostructures.

cond-mat.mtrl-sci↗

arXiv2026

Towards reliable electrical measurements of superconducting devices inside a transmission electron microscope

Correlating structure with electronic functionality is central to the engineering of quantum materials and devices whose properties depend sensitively on disorder. Transmission electron microscopy (TEM) offers high spatial resolution together with access to structural, electronic, and magnetic degrees of freedom. However, operando electrical transport measurements on functional quantum devices remain rare, particularly at liquid helium temperature. Here, we demonstrate electrical transport measurements of niobium nitride (NbN) devices inside a TEM using a continuous-flow liquid-helium-cooled sample holder. By optimizing a thermal radiation shield to limit radiation from the nearby pole pieces of the objective lens, we achieve an estimated base sample temperature of 8-9 K, as inferred from the superconducting transition temperatures of our devices. We find that both electron beam illumination and objective lens excitation perturb the superconducting state. In addition, we evaluate the imaging capabilities and stability of the sample holder at low temperature by imaging the magnetic domain structure of the van der Waals ferromagnet CrBr$_3$. Finally, we perform calculations that underscore the importance of cryo-shielding for minimizing thermal radiation onto the device. This capability enables correlative low-temperature TEM studies, in which structural, spectroscopic, and electrical transport data can be obtained from the same device, thereby providing a platform for probing the microscopic origins of quantum phenomena.

cond-mat.supr-con↗