arXiv subjects

Michael J. Manfra

Publications and source records attributed to Michael J. Manfra.

At least 73 records · Page 4Linked to original sources

arXiv2022

Domain Textures in the Fractional Quantum Hall Effect

Impacts of domain textures on low-lying neutral excitations in the bulk of fractional quantum Hall effect (FQHE) systems are probed by resonant inelastic light scattering. We demonstrate that large domains of quantum fluids support long-wavelength neutral collective excitations with well-defined wave vector (momentum) dispersion that could be interpreted by theories for uniform phases. Access to dispersive low-lying neutral collective modes in large domains of FQHE fluids such as long wavelength magnetorotons at filling factor v=1/3 offer significant experimental access to strong electron correlation physics in the FQHE.

cond-mat.mes-hall↗

arXiv2021

InSbAs two-dimensional electron gases as a platform for topological superconductivity

Topological superconductivity can be engineered in semiconductors with strong spin-orbit interaction coupled to a superconductor. Experimental advances in this field have often been triggered by the development of new hybrid material systems. Among these, two-dimensional electron gases (2DEGs) are of particular interest due to their inherent design flexibility and scalability. Here we discuss results on a 2D platform based on a ternary 2DEG (InSbAs) coupled to in-situ grown Aluminum. The spin-orbit coupling in these 2DEGs can be tuned with the As concentration, reaching values up to 400 meV$\unicode{xC5}$, thus exceeding typical values measured in its binary constituents. In addition to a large Landé g-factor $\sim$ 55 (comparable to InSb), we show that the clean superconductor-semiconductor interface leads to a hard induced superconducting gap. Using this new platform we demonstrate the basic operation of phase-controllable Josephson junctions, superconducting islands and quasi-1D systems, prototypical device geometries used to study Majorana zero modes.

cond-mat.mes-hall↗

arXiv2021

Simultaneous Operations in a Two-Dimensional Array of Singlet-Triplet Qubits

In many physical approaches to quantum computation, error-correction schemes assume the ability to form two-dimensional qubit arrays with nearest-neighbor couplings and parallel operations at multiple qubit sites. While semiconductor spin qubits exhibit long coherence times relative to their operation speed and single-qubit fidelities above error correction thresholds, multiqubit operations in two-dimensional arrays have been limited by fabrication, operation, and readout challenges. We present a two-by-two array of four singlet-triplet qubits in gallium arsenide and show simultaneous coherent operations and four-qubit measurements via exchange oscillations and frequency-multiplexed single-shot measurements. A larger multielectron quantum dot is fabricated in the center of the array as a tunable interqubit link, which we utilize to demonstrate coherent spin exchange with selected qubits. Our techniques are extensible to other materials, indicating a path towards quantum processors with gate-controlled spin qubits.

cond-mat.mes-hall↗

arXiv2021

Impact of bulk-edge coupling on observation of anyonic braiding statistics in quantum Hall interferometers

Quantum Hall interferometers have been used to probe fractional charge, and more recently, fractional statistics of quasiparticles. Theoretical predictions have been made regarding the effect of electrostatic coupling on interferometer behavior and observation of anyonic phases. Here we present measurements of a small Fabry-Perot interferometer in which these electrostatic coupling constants can be determined experimentally, facilitating quantitative comparison with theory. At the $ν= 1/3$ fractional quantum Hall state, this device exhibits Aharonov-Bohm interference near the center of the conductance plateau interrupted by a few discrete phase jumps, and $Φ_0$ oscillations at higher and lower magnetic fields, consistent with theoretical predictions for detection of anyonic statistics. We estimate the electrostatic parameters $K_I$ and $K_{IL}$ by two methods: by the ratio of oscillation periods in compressible versus incompressible regions, and from finite-bias conductance measurements, and these two methods yield consistent results. We find that the extracted $K_I$ and $K_{IL}$ can account for the deviation of the values of the discrete phase jumps from the theoretically predicted anyonic phase $θ_a = 2π/3$. In the integer quantum Hall regime, we find that the experimental values of $K_I$ and $K_{IL}$ can account for the the observed Aharonov-Bohm and Coulomb dominated behavior of different edge states.

cond-mat.mes-hall↗

arXiv2021

Observation of flat bands in gated semiconductor artificial graphene

Flat bands near M points in the Brillouin zone are key features of honeycomb symmetry in artificial graphene (AG) where electrons may condense into novel correlated phases. Here we report the observation of van Hove singularity doublet of AG in GaAs quantum well transistors, which presents the evidence of flat bands in semiconductor AG. Two emerging peaks in photoluminescence spectra tuned by backgate voltages probe the singularity doublet of AG flat bands, and demonstrate their accessibility to the Fermi level. As the Fermi level crosses the doublet, the spectra display dramatic stability against electron density, indicating interplays between electron-electron interactions and honeycomb symmetry. Our results provide a new flexible platform to explore intriguing flat band physics.

cond-mat.mes-hall↗

arXiv2021

Adiabatic quantum state transfer in a semiconductor quantum-dot spin chain

Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer mechanisms are required for quantum error correction and efficient algorithms. Here, we present evidence of adiabatic quantum-state transfer in a chain of semiconductor quantum-dot electron spins. By adiabatically modifying exchange couplings, we transfer single- and two-spin states between distant electrons in less than 127 ns. We also show that this method can be cascaded for spin-state transfer in long spin chains. Based on simulations, we estimate that the probability to correctly transfer single-spin eigenstates and two-spin singlet states can exceed 0.95 for the experimental parameters studied here. In the future, state and process tomography will be required to verify the transfer of arbitrary single qubit states with a fidelity exceeding the classical bound. Adiabatic quantum-state transfer is robust to noise and pulse-timing errors. This method will be useful for initialization, state distribution, and readout in large spin-qubit arrays for gate-based quantum computing. It also opens up the possibility of universal adiabatic quantum computing in semiconductor quantum-dot spin qubits.

cond-mat.mes-hall↗

arXiv2021

A Josephson junction supercurrent diode

Transport is called nonreciprocal when not only the sign, but also the absolute value of the current, depends on the polarity of the applied voltage. It requires simultaneously broken inversion and time-reversal symmetries, e.g., by the interplay of spin-orbit coupling and magnetic field. So far, observation of nonreciprocity was always tied to resistivity, and dissipationless nonreciprocal circuit elements were elusive. Here, we engineer fully superconducting nonreciprocal devices based on highly-transparent Josephson junctions fabricated on InAs quantum wells. We demonstrate supercurrent rectification far below the transition temperature. By measuring Josephson inductance, we can link nonreciprocal supercurrent to the asymmetry of the current-phase relation, and directly derive the supercurrent magnetochiral anisotropy coefficient for the first time. A semi-quantitative model well explains the main features of our experimental data. Nonreciprocal Josephson junctions have the potential to become for superconducting circuits what $pn$-junctions are for traditional electronics, opening the way to novel nondissipative circuit elements.

cond-mat.supr-con↗

arXiv2021

Floquet-Enhanced Spin Swaps

The transfer of information between quantum systems is essential for quantum communication and computation. In quantum computers, high connectivity between qubits can improve the efficiency of algorithms, assist in error correction, and enable high-fidelity readout. However, as with all quantum gates, operations to transfer information between qubits can suffer from errors associated with spurious interactions and disorder between qubits, among other things. Here, we harness interactions and disorder between qubits to improve a swap operation for spin eigenstates in semiconductor gate-defined quantum-dot spins. We use a system of four electron spins, which we configure as two exchange-coupled singlet-triplet qubits. Our approach, which relies on the physics underlying discrete time crystals, enhances the quality factor of spin-eigenstate swaps by up to an order of magnitude. Our results show how interactions and disorder in multi-qubit systems can stabilize non-trivial quantum operations and suggest potential uses for non-equilibrium quantum phenomena, like time crystals, in quantum information processing applications. Our results also confirm the long-predicted emergence of effective Ising interactions between exchange-coupled singlet-triplet qubits.

cond-mat.mes-hall↗

arXiv2021

Josephson inductance as a probe for highly ballistic semiconductor-superconductor weak links

We present simultaneous measurements of Josephson inductance and DC transport characteristics of ballistic Josephson junctions based upon an epitaxial Al-InAs heterostructure. The Josephson inductance at finite current bias directly reveals the current-phase relation. The proximity-induced gap, the critical current and the average value of the transparency $\barτ$ are extracted without need for phase bias, demonstrating, e.g.,~a near-unity value of $\barτ=0.94$. Our method allows us to probe the devices deeply in the non-dissipative regime, where ordinary transport measurements are featureless. In perpendicular magnetic field the junctions show a nearly perfect Fraunhofer pattern of the critical current, which is insensitive to the value of $\barτ$. In contrast, the signature of supercurrent interference in the inductance turns out to be extremely sensitive to $\barτ$.

cond-mat.supr-con↗

arXiv2021

Long-Distance Superexchange between Semiconductor Quantum-Dot Electron Spins

Because of their long coherence times and potential for scalability, semiconductor quantum-dot spin qubits hold great promise for quantum information processing. However, maintaining high connectivity between quantum-dot spin qubits, which favor linear arrays with nearest neighbor coupling, presents a challenge for large-scale quantum computing. In this work, we present evidence for long-distance spin-chain-mediated superexchange coupling between electron spin qubits in semiconductor quantum dots. We weakly couple two electron spins to the ends of a two-site spin chain. Depending on the spin state of the chain, we observe oscillations between the distant end spins. We resolve the dynamics of both the end spins and the chain itself, and our measurements agree with simulations. Superexchange is a promising technique to create long-distance coupling between quantum-dot spin qubits.

cond-mat.mes-hall↗

arXiv2020

Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas

Most proof-of-principle experiments for spin qubits have been performed using GaAs-based quantum dots because of the excellent control they offer over tunneling barriers and the orbital and spin degrees of freedom. Here, we present the first realization of high-quality single and double quantum dots hosted in an InAs two-dimensional electron gas (2DEG), demonstrating accurate control down to the few-electron regime, where we observe a clear Kondo effect and singlet-triplet spin blockade. We measure an electronic $g$-factor of $16$ and a typical magnitude of the random hyperfine fields on the dots of $\sim 0.6\, \mathrm{mT}$. We estimate the spin-orbit length in the system to be $\sim 5-10\, μ\mathrm{m}$, which is almost two orders of magnitude longer than typically measured in InAs nanostructures, achieved by a very symmetric design of the quantum well. These favorable properties put the InAs 2DEG on the map as a compelling host for studying fundamental aspects of spin qubits. Furthermore, having weak spin-orbit coupling in a material with a large Rashba coefficient potentially opens up avenues for engineering structures with spin-orbit coupling that can be controlled locally in space and/or time.

cond-mat.mes-hall↗

arXiv2020

Anodic Oxidation of Epitaxial Superconductor-Semiconductor Hybrids

We demonstrate a new fabrication process for hybrid semiconductor-superconductor heterostructures based on anodic oxidation (AO), allowing controlled thinning of epitaxial Al films. Structural and transport studies of oxidized epitaxial Al films grown on insulating GaAs substrates reveal spatial non-uniformity and enhanced critical temperature and magnetic fields. Oxidation of epitaxial Al on hybrid InAs heterostructures with a conducting quantum well show similarly enhanced superconducting properties transferred to the two-dimensional electron gas (2DEG) by proximity effect, with critical perpendicular magnetic fields up to 3.5 T. An insulating AlOx film, that passivates the heterostructure from exposure to air, is obtained by complete oxidation of the Al. It simultaneously removes the need to strip Al which damages the underlying semiconductor. AO passivation yielded 2DEG mobilities two times higher than similar devices with Al removed by wet etching. An AO-passivated Hall bar showed quantum Hall features emerging at a transverse field of 2.5 T, below the critical transverse field of thinned films, eventually allowing transparent coupling of quantum Hall effect and superconductivity. AO thinning and passivation are compatible with standard lithographic techniques, giving lateral resolution below <50 nm. We demonstrate local patterning of AO by realizing a semiconductor-based Josephson junction operating up to 0.3 T perpendicular.

cond-mat.mtrl-sci↗

arXiv2020

Coherent multi-spin exchange coupling in a quantum-dot spin chain

Heisenberg exchange coupling between neighboring electron spins in semiconductor quantum dots provides a powerful tool for quantum information processing and simulation. Although so far unrealized, extended Heisenberg spin chains can enable long-distance quantum information transfer and the generation of non-equilibrium quantum states. In this work, we implement simultaneous, coherent exchange coupling between all nearest-neighbor pairs of spins in a quadruple quantum dot. The main challenge in implementing simultaneous exchange couplings is the nonlinear and nonlocal dependence of the exchange couplings on gate voltages. Through a combination of electrostatic simulation and theoretical modeling, we show that this challenge arises primarily due to lateral shifts of the quantum dots during gate pulses. Building on this insight, we develop two models, which can be used to predict the confinement gate voltages for a desired set of exchange couplings. Although the model parameters depend on the number of exchange couplings desired (suggesting that effects in addition to lateral wavefunction shifts are important), the models are sufficient to enable simultaneous and independent control of all three exchange couplings in a quadruple quantum dot. We demonstrate two-, three-, and four-spin exchange oscillations, and our data agree with simulations.

cond-mat.mes-hall↗

arXiv2020

Direct observation of anyonic braiding statistics at the $ν$=1/3 fractional quantum Hall state

Utilizing an electronic Fabry-Perot interferometer in which Coulomb charging effects are suppressed, we report experimental observation of anyonic braiding statistics for the $ν=1/3$ fractional quantum Hall state. Strong Aharonov-Bohm interference of the $ν=1/3$ edge mode is punctuated by discrete phase slips consistent with an anyonic phase of $θ_{anyon}=\frac{2π}{3}$. Our results are consistent with a recent theory of a Fabry-Perot interferometer operated in a regime in which device charging energy is small compared to the energy of formation of charged quasiparticles. Close correspondence between device operation and theoretical predictions substantiates our claim of observation of anyonic braiding.

cond-mat.mes-hall↗

arXiv2020

Conditional Teleportation of Quantum-Dot Spin States

Among the different platforms for quantum information processing, individual electron spins in semiconductor quantum dots stand out for their long coherence times and potential for scalable fabrication. The past years have witnessed substantial progress in the capabilities of spin qubits. However, coupling between distant electron spins, which is required for quantum error correction, presents a challenge, and this goal remains the focus of intense research. Quantum teleportation is a canonical method to transmit qubit states, but it has not been implemented in quantum-dot spin qubits. Here, we present evidence for quantum teleportation of electron spin qubits in semiconductor quantum dots. Although we have not performed quantum state tomography to definitively assess the teleportation fidelity, our data are consistent with conditional teleportation of spin eigenstates, entanglement swapping, and gate teleportation. Such evidence for all-matter spin-state teleportation underscores the capabilities of exchange-coupled spin qubits for quantum-information transfer.

cond-mat.mes-hall↗

arXiv2019

Resistivity anisotropy of quantum Hall stripe phases

Quantum Hall stripe phases near half-integer filling factors $ν\ge 9/2$ were predicted by Hartree-Fock (HF) theory and confirmed by discoveries of giant resistance anisotropies in high-mobility two-dimensional electron gases. A theory of such anisotropy was proposed by MacDonald and Fisher, although they used parameters whose dependencies on the filling factor, electron density, and mobility remained unspecified. Here, we fill this void by calculating the hard-to-easy resistivity ratio as a function of these three variables. Quantitative comparison with experiment yields very good agreement which we view as evidence for the "plain vanilla" smectic stripe HF phases.

cond-mat.mes-hall↗

arXiv2019

Stable quantum dots in an InSb two-dimensional electron gas

Indium antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, strong spin-orbit interaction, large Landé g-factor, and small effective mass. This makes them an attractive platform to explore a variety of mesoscopic phenomena ranging from spintronics to topological superconductivity. However, there exist limited studies of quantum confined systems in these 2DEGs, often attributed to charge instabilities and gate drifts. We overcome this by removing the $δ$-doping layer from the heterostructure, and induce carriers electrostatically. This allows us to perform the first detailed study of stable gate-defined quantum dots in InSb 2DEGs. We demonstrate two distinct strategies for carrier confinement and study the charge stability of the dots. The small effective mass results in a relatively large single particle spacing, allowing for the observation of an even-odd variation in the addition energy. By tracking the Coulomb oscillations in a parallel magnetic field we determine the ground state spin configuration and show that the large g-factor ($\sim$30) results in a singlet-triplet transition at magnetic fields as low as 0.3 T.

cond-mat.mes-hall↗

arXiv2019

Toward durable Al-InSb hybrid heterostructures via epitaxy of 2ML interfacial InAs screening layers

The large Landé g-factor, high spin-orbit coupling, and low effective mass of the two-dimensional electron gas in InSb quantum wells combined with proximal superconductivity may realize a scalable platform for topological quantum computation. Aluminum thin films directly deposited on top of InSb planar structures result in the formation of a reactive AlInSb layer at the interface. This interlayer progressively consumes the whole Al film, resulting in a disordered AlInSb layer after few months at room temperature. We report on a heterostructure design that results in a significant increase of the durability of these hybrid Al-InSb heterostructures with the preservation of a pure Al film and sharp superconductor-semiconductor interface for more than one year. Two monolayers of epitaxial InAs at the superconductor-semiconductor interface prevent interfacial reactivity as evidenced by X-ray reflectivity and energy dispersive spectroscopy measurements. Structural characterizations of the Al films by transmission electron microscopy reveal the presence of tens of nanometers wide grains predominantly oriented with Al(110) parallel to InSb(001).

cond-mat.mtrl-sci↗