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Michael Jetter

Publications and source records attributed to Michael Jetter.

38 records · Page 3Linked to original sources

Heralded Single-Photon Emission from the Mollow Triplet Sidebands of a Quantum Dot

Emission from a resonantly excited quantum emitter is a fascinating research topic within quantum optics and a useful source for different types of quantum light fields. The resonance spectrum consists of a single spectral line below saturation of a quantum emitter which develops into a triplet at powers above saturation of the emitter. The spectral properties of the triplet strongly depends on pump power and detuning of the excitation laser. The three closely spaced photon channels from the resonance fluorescence have different photon statistical signatures. We present a detailed photon-statistics analysis of the resonance fluorescence emission triplet from a solid state-based artificial atom, i.e. a semiconductor quantum dot. The photon correlation measurements demonstrate both 'single' and 'heralded' photon emission from the Mollow triplet sidebands. The ultra-bright and narrowband emission (5.9 MHz into the first lens) can be conveniently frequency-tuned by laser detuning over 15 times its linewidth ({Δν} \approx 1.0 GHz). These unique properties make the Mollow triplet sideband emission a valuable light source for, e.g.quantum light spectroscopy and quantum information applications.

cond-mat.mes-hall↗

InP-quantum dots in Al0.20Ga0.80InP with different barrier configurations

Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al0.20Ga0.80InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of different barrier configurations as well as the incorporation of additional tunnel barriers on the optical properties has been investigated. The confinement energy between the dot barrier and the surrounding barrier layers, which is the sum of the band discontinuities for the valence and the conduction bands, was chosen to be approximately 190 meV by using Al0.50Ga0.50InP. In combination with 2 nm thick AlInP tunnel barriers, the internal quantum efficiency of these barrier configurations can be increased by up to a factor of 20 at elevated temperatures with respect to quantum dots without such layers.

cond-mat.mtrl-sci↗