Michael Niedermayr | Searcharxiv

arXiv2015

Operation of a planar-electrode ion-trap array with adjustable RF electrodes

One path to realizing systems of trapped atomic ions suitable for large-scale quantum computing and simulation is to create a two-dimensional array of ion traps. Interactions between nearest-neighbouring ions could then be turned on and off by tuning the ions' relative positions and frequencies. We demonstrate and characterize the operation of a planar-electrode ion-trap array. Driving the trap with a network of phase-locked radio-frequency (RF) resonators which provide independently variable voltage amplitudes we vary the position and motional frequency of a 40Ca+ ion in two dimensions within the trap array. With suitable miniaturization of the trap structure, this provides a viable architecture for large-scale quantum simulations.

quant-ph↗

arXiv2015

Cryogenic silicon surface ion trap

Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single $^{40}$Ca$^+$ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as $\dot{\bar{n}}=$ 0.33 phonons/s at an ion-electrode distance of 230 $μ$m. These results open many new avenues to arrays of micro-fabricated ion traps.

quant-ph↗