arXiv subjects

Michael P. Jura

Publications and source records attributed to Michael P. Jura.

4 recordsLinked to original sources

arXiv2026

Benchmarking exchange-only control of a 48-spin singlet manifold

Exchange-only quantum computing benefits from high fidelity and straightforward control afforded by the exchange interaction. However, independently controllable qubits must be encoded into subsystems of at least three electron spins, restricting computation to only a fraction of the available spin Hilbert space. The remaining states are treated as leakage and used only transiently in gate sequences. By contrast, a quantitative, system-wide measure of exchange-only performance can exploit the full available Hilbert space, including states conventionally treated as leakage. Here, we apply this approach to arrays of up to 48 electron spins, accessing a total-spin-zero Hilbert space with dimension exceeding $2^{40}$. Measurements of out-of-time-order correlators (OTOCs) reveal rich scrambling dynamics and demonstrate access to regimes relevant to quantum computational advantage. Using generalized forms of cross-entropy and mirror randomized benchmarking, we also assess the aggregate performance of the full exchange-only system per fundamental two-body interaction: the two-spin exchange. We obtain an effective system-level error of $3 \times 10^{-4}$ per exchange, incorporating the complete experimental control sequence and all associated noise sources. This value is up to an order of magnitude lower than those reported from comparable benchmarks on other platforms at the time of writing.

quant-ph↗

arXiv2025

Two-dimensional Si spin qubit arrays with multilevel interconnects

The promise of quantum computation is contingent upon physical qubits with both low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform, but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semiconductor manufacturing, with multiple back-end-of-line layers to show an extendable two-dimensional array of spins with fully controllable nearest-neighbor exchange interactions. In a device using three interconnect layers, we encode exchange-only qubits and achieve average single-qubit gate fidelities consistent with single-layer devices, including fidelities greater than 99.9%, as measured by blind randomized benchmarking. Moreover, with spin connectivity in two dimensions, we show that both linear and right-angle exchange-only qubits with high performance can be formed, enabling qubit array reconfigurability in the presence of defects. This extendable device platform demonstrates that industrial manufacturing techniques can be leveraged for scalable spin qubit technologies.

quant-ph↗

arXiv2021

A flexible design platform for Si/SiGe exchange-only qubits with low disorder

Spin-based silicon quantum dots are an attractive qubit technology for quantum information processing with respect to coherence time, control, and engineering. Here we present an exchange-only Si qubit device platform that combines the throughput of CMOS-like wafer processing with the versatility of direct-write lithography. The technology, which we coin "SLEDGE," features dot-shaped gates that are patterned simultaneously on one topographical plane and subsequently connected by vias to interconnect metal lines. The process design enables non-trivial layouts as well as flexibility in gate dimensions, material selection, and additional device features such as for rf qubit control. We show that the SLEDGE process has reduced electrostatic disorder with respect to traditional overlapping gate devices with lift-off metallization, and we present spin coherent exchange oscillations and single qubit blind randomized benchmarking data.

cond-mat.mes-hall↗

arXiv2021

Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots

Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniques, easing the extraction of energy spectra in multiple-dot devices. We use this method to measure dozens of valley excited state energies spanning multiple wafers, quantum dots, and orbital states, crucial for evaluating the dependence of valley splitting on quantum well width and other epitaxial conditions. Our results suggest that narrower wells can be beneficial for improving valley splittings, but this effect can be confounded by variations in growth and fabrication conditions. These results underscore the importance of valley splitting measurements for guiding the development of Si qubits.

cond-mat.mes-hall↗