arXiv subjects

Michael R. Vissers

Publications and source records attributed to Michael R. Vissers.

48 records · Page 3Linked to original sources

arXiv2015

Frequency-tunable Superconducting Resonators via Nonlinear Kinetic Inductance

We have designed, fabricated and tested a frequency-tunable high-Q superconducting resonator made from a niobium titanium nitride film. The frequency tunability is achieved by injecting a DC current through a current-directing circuit into the nonlinear inductor whose kinetic inductance is current-dependent. We have demonstrated continuous tuning of the resonance frequency in a 180 MHz frequency range around 4.5 GHz while maintaining the high internal quality factor $Q_i> 180,000$. This device may serve as a tunable filter and find applications in superconducting quantum computing and measurement. It also provides a useful tool to study the nonlinear response of a superconductor. In addition, it may be developed into techniques for measurement of the complex impedance of a superconductor at its transition temperature and for readout of transition-edge sensors.

cond-mat.supr-con↗

arXiv2015

Photon-noise limited sensitivity in titanium nitride kinetic inductance detectors

We demonstrate photon-noise limited performance at sub-millimeter wavelengths in feedhorn-coupled, microwave kinetic inductance detectors (MKIDs) made of a TiN/Ti/TiN trilayer superconducting film, tuned to have a transition temperature of 1.4~K. Micro-machining of the silicon-on-insulator wafer backside creates a quarter-wavelength backshort optimized for efficient coupling at 250~\micron. Using frequency read out and when viewing a variable temperature blackbody source, we measure device noise consistent with photon noise when the incident optical power is $>$~0.5~pW, corresponding to noise equivalent powers $>$~3$\times 10^{-17}$ W/$\sqrt{\mathrm{Hz}}$. This sensitivity makes these devices suitable for broadband photometric applications at these wavelengths.

astro-ph.IM↗

arXiv2014

The Next Generation BLAST Experiment

The Balloon-borne Large Aperture Submillimeter Telescope for Polarimetry (BLASTPol) was a suborbital experiment designed to map magnetic fields in order to study their role in star formation processes. BLASTPol made detailed polarization maps of a number of molecular clouds during its successful flights from Antarctica in 2010 and 2012. We present the next-generation BLASTPol instrument (BLAST-TNG) that will build off the success of the previous experiment and continue its role as a unique instrument and a test bed for new technologies. With a 16-fold increase in mapping speed, BLAST-TNG will make larger and deeper maps. Major improvements include a 2.5 m carbon fiber mirror that is 40% wider than the BLASTPol mirror and ~3000 polarization sensitive detectors. BLAST-TNG will observe in three bands at 250, 350, and 500 microns. The telescope will serve as a pathfinder project for microwave kinetic inductance detector (MKID) technology, as applied to feedhorn coupled submillimeter detector arrays. The liquid helium cooled cryostat will have a 28-day hold time and will utilize a closed-cycle $^3$He refrigerator to cool the detector arrays to 270 mK. This will enable a detailed mapping of more targets with higher polarization resolution than any other submillimeter experiment to date. BLAST-TNG will also be the first balloon-borne telescope to offer shared risk observing time to the community. This paper outlines the motivation for the project and the instrumental design.

astro-ph.IM↗

arXiv2014

The next-generation BLASTPol experiment

The Balloon-borne Large Aperture Submillimeter Telescope for Polarimetry (BLASTPol) is a suborbital mapping experiment designed to study the role magnetic fields play in star formation. BLASTPol has had two science flights from McMurdo Station, Antarctica in 2010 and 2012. These flights have produced thousands of polarization vectors at 250, 350 and 500 microns in several molecular cloud targets. We present the design, specifications, and progress towards the next-generation BLASTPol experiment (BLAST-TNG). BLAST-TNG will fly a 40% larger diameter primary mirror, with almost 8 times the number of polarization-sensitive detectors resulting in a factor of 16 increase in mapping speed. With a spatial resolution of 22 arcseconds and four times the field of view of BLASTPol, BLAST-TNG will bridge the angular scales between Planck's low resolution all-sky maps and ALMA's ultra-high resolution narrow fields. The new receiver has a larger cryogenics volume, allowing for a 28 day hold time. BLAST-TNG employs three arrays of Microwave Kinetic Inductance Detectors (MKIDs) with 30% fractional bandwidth at 250, 350 and 500 microns. In this paper, we will present the new BLAST-TNG instrument and science objectives.

astro-ph.IM↗

arXiv2012

Long-lived, radiation-suppressed superconducting quantum bit in a planar geometry

We present a superconducting qubit design that is fabricated in a 2D geometry over a superconducting ground plane to enhance the lifetime. The qubit is coupled to a microstrip resonator for readout. The circuit is fabricated on a silicon substrate using low loss, stoichiometric titanium nitride for capacitor pads and small, shadow-evaporated aluminum/aluminum-oxide junctions. We observe qubit relaxation and coherence times ($T_1$ and $T_2$) of 11.7 $\pm$ 0.2 $μ$s and 8.7 $\pm$ 0.3 $μ$s, respectively. Calculations show that the proximity of the superconducting plane suppresses the otherwise high radiation loss of the qubit. A significant increase in $T_1$ is projected for a reduced qubit-to-superconducting plane separation.

cond-mat.supr-con↗

arXiv2012

Proximity-Coupled Ti/TiN Multilayers for use in Kinetic Inductance Detectors

We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, Tc, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible Tc's are obtained from 0.8 - 2.5 K. These films had high resistivities, > 100 uOhm-cm and internal quality factors for resonators in the GHz range on the order of 100k and higher. Both trilayers of TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a highly controlled process for films over a wide thickness range. Detectors were fabricated and showed single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and other potential applications such as nanowire detectors, transition edge sensors and associated quantum information applications.

cond-mat.supr-con↗

arXiv2012

Characterization and In-situ Monitoring of Sub-stoichiometric Adjustable Tc Titanium Nitride Growth

The structural and electrical properties of Ti-N films deposited by reactive sputtering depend on their growth parameters, in particular the Ar:N2 gas ratio. We show that the nitrogen percentage changes the crystallographic phase of the film progressively from pure α-Ti, through an α-Ti phase with interstitial nitrogen, to stoichiometric Ti2N, and through a substoichiometric TiNX to stoichiometric TiN. These changes also affect the superconducting transition temperature, Tc, allowing, the superconducting properties to be tailored for specific applications. After decreasing from a Tc of 0.4 K for pure Ti down to below 50 mK at the Ti2N point, the Tc then increases rapidly up to nearly 5 K over a narrow range of nitrogen incorporation. This very sharp increase of Tc makes it difficult to control the properties of the film from wafer-to-wafer as well as across a given wafer to within acceptable margins for device fabrication. Here we show that the nitrogen composition and hence the superconductive properties are related to, and can be determined by, spectroscopic ellipsometry. Therefore, this technique may be used for process control and wafer screening prior to investing time in processing devices.

cond-mat.supr-con↗

arXiv2012

Etch Induced Microwave Losses in Titanium Nitride Superconducting Resonators

We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on Si wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers the reactive etched resonators showed low internal loss, whereas the ion-milled samples showed dramatically higher loss. At single-photon powers we found that the fluorine-etched resonators exhibited substantially lower loss than the chlorine-etched ones. We interpret the results by use of numerically calculated filling factors and find that the silicon surface exhibits a higher loss when chlorine-etched than when fluorine-etched. We also find from microscopy that re-deposition of silicon onto the photoresist and side walls is the probable cause for the high loss observed for the ion-milled resonators

cond-mat.supr-con↗

arXiv2012

Identifying capacitive and inductive loss in lumped element superconducting hybrid titanium nitride/aluminum resonators

We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium nitride was progressively replaced with aluminum in the inter-digitated capacitor and meandered inductor elements. By measuring the power dependent loss at 50 mK as the Al-TiN fraction in each element is increased, we find that at low electric field, i.e. in the single photon limit, the loss is two level system in nature and is correlated with the amount of Al capacitance rather than the Al inductance. In the high electric field limit, the remaining loss is linearly related to the product of the Al area times its inductance and is likely due to quasiparticles generated by stray radiation. At elevated temperature, additional loss is correlated with the amount of Al in the inductance, with a power independent TiN-Al interface loss term that exponentially decreases as the temperature is reduced. The TiN-Al interface loss is vanishingly small at the 50 mK base temperature.

cond-mat.supr-con↗

arXiv2011

Coherence in a transmon qubit with epitaxial tunnel junctions

We developed transmon qubits based on epitaxial tunnel junctions and interdigitated capacitors. This multileveled qubit, patterned by use of all-optical lithography, is a step towards scalable qubits with a high integration density. The relaxation time T1 is .72-.86mu sec and the ensemble dephasing time T2 is slightly larger than T1. The dephasing time T2 (1.36mu sec) is nearly energy-relaxation-limited. Qubit spectroscopy yields weaker level splitting than observed in qubits with amorphous barriers in equivalent-size junctions. The qubit's inferred microwave loss closely matches the weighted losses of the individual elements (junction, wiring dielectric, and interdigitated capacitor), determined by independent resonator measurements.

cond-mat.supr-con↗

arXiv2011

Sub-micrometer epitaxial Josephson junctions for quantum circuits

We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) "via process" yielding junctions as small as 0.8 mu m in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top electrodes. While room-temperature (295 K) resistance versus area data are favorable for both types of top electrodes, the low-temperature (50 mK) data show that junctions with the Al top electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates to improved qubit performance.

cond-mat.supr-con↗

arXiv2010

Low Loss Superconducting Titanium Nitride Coplanar Waveguide Resonators

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into RF coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e. high and low power regimes, respectively. At high power, internal quality factors ($Q_i$'s) higher than $10^7$ were measured for TiN with predominantly a (200)-TiN orientation. Films that showed significant (111)-TiN texture invariably had much lower $Q_i$'s, on the order of $10^5$. Our studies show that the (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, $\approx 2$ nm, layer of SiN during the pre-deposition procedure. In the single photon regime, $Q_i$ of these films exceeded $8\times10^5$, while thicker SiN buffer layers led to reduced $Q_i$'s at low power.

cond-mat.supr-con↗