arXiv subjects

Michael Seifert

Publications and source records attributed to Michael Seifert.

5 recordsLinked to original sources

arXiv2023

Determination of acoustic phonon anharmonicities via second-order Raman scattering in CuI

We demonstrate the determination of anharmonic acoustic phonon properties via second-order Raman scattering exemplarily on copper iodide single crystals. The origin of multi-phonon features from the second-order Raman spectra was assigned by the support of the calculated 2-phonon density of states. In this way, the temperature dependence of acoustic phonons was determined down to 10\,K. To determine independently the harmonic contributions of respective acoustic phonons, density functional theory (DFT) in quasi-harmonic approximation was used. Finally, the anharmonic contributions were determined. The results are in agreement with earlier publications and extend CuI's determined acoustic phonon properties to lower temperatures with higher accuracy. This approach demonstrates that it is possible to characterize the acoustic anharmonicities via Raman scattering down to zero-temperature renormalization constants of at least 0.1\,cm$^{-1}$.

cond-mat.mtrl-sci↗

arXiv2023

Structure prediction and characterization of CuI-based ternary $p$-type transparent conductors

Zincblende copper iodide has attracted significant interest as a potential material for transparent electronics, thanks to its exceptional light transmission capabilities in the visible range and remarkable hole conductivity. However, remaining challenges hinder the utilization of copper iodide's unique properties in real-world applications. To address this, chalcogen doping has emerged as a viable approach to enhance the hole concentration in copper iodide. In search of further strategies to improve and tune the electronic properties of this transparent semiconductor, we investigate the ternary phase diagram of copper and iodine with sulphur or selenium by performing structure prediction calculations using the minima hopping method. As a result, we find 11 structures located on or near the convex hull, 9 of which are unreported. Based on our band structure calculations, it appears that sulphur and selenium are promising candidates for achieving ternary semiconductors suitable as $p$-type transparent conducting materials. Additionally, our study reveals the presence of unreported phases that exhibit intriguing topological properties. These findings broaden the scope of potential applications for these ternary systems, highlighting the possibility of harnessing their unique electronic characteristics in diverse electronic devices and systems.

cond-mat.mtrl-sci↗

arXiv2022

Effects of hole doping on the electronic and optical properties of transparent conducting copper iodide

Zincblende copper iodide has been attracting growing interest as p-type semiconductor for applications in transparent electronics and transparent thermoelectrics. A key step towards technological applications is the possibility to enhance copper iodide (CuI) conductivity by doping without deteriorating transparency. A recent high-throughput computational study revealed that chalcogen substitutions on iodine sites can act as shallow acceptors. Following computational predictions, doping by oxygen, sulfur and selenium substitutions on iodine sites has recently been realized in the laboratory, showing however that few experimental challenges have still to be tackled on the way to technological applications. We investigate here by means of {\it ab initio} calculations the effect of such substitutions on the electronic and optical properties of CuI. Our results suggest that sulfur and selenium doping are the best candidates to obtain a controllable increase of hole concentrations, while preserving at the same time transparency in the visible and high hole mobility.

cond-mat.mtrl-sci↗

arXiv2022

Dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ alloy thin films

We study the dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ thin film alloys using spectroscopic ellipsometry in the spectral range between 0.7 eV to 6.4 eV, in combination with first-principles calculations based on density functional theory. Through the comparison of theory and experiment, we attribute features in the dielectric function to electronic transitions at specific k-points in the Brillouin zone. The observed bandgap bowing as a function of alloy composition is discussed in terms of different physical and chemical contributions. The band splitting at the top of the valence band due to spin-orbit coupling is found to decrease with increasing Br-concentration, from a value of 660 meV for CuI to 150 meV for CuBr. This result can be understood considering the contribution of copper d-orbitals to the valence band maximum as a function of the alloy composition.

cond-mat.mtrl-sci↗

arXiv2020

Stable ordered phases of cuprous iodide with complexes of copper vacancies

We perform an exhaustive theoretical study of the phase diagram of Cu-I binaries, focusing on Cu-poor compositions, relevant for p-type transparent conduction. We find that the interaction between neighboring Cu vacancies is the determining factor that stabilizes non-stoichiometric zincblende phases. This interaction leads to defect complexes where Cu vacancies align preferentially along the [100] crystallographic direction. It turns out that these defect complexes have an important influence on hole conductivity, as they lead to dispersive conducting $p$-states that extend up to around 0.8 eV above the Fermi level. We furthermore observe a characteristic peak in the density of electronic states, which could provide an experimental signature for this type of defect complexes.

cond-mat.mtrl-sci↗