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Michaela Lammel

Publications and source records attributed to Michaela Lammel.

At least 19 recordsLinked to original sources

From Film to Flakes: Electronic Properties and Magnetization Variations in Yttrium Iron Garnet

Yttrium iron garnet (YIG) is a ferrimagnetic insulator valued for its high Curie temperature, very low magnetic damping, and ability to support long-range spin-wave transport. These qualities have established it as a cornerstone material in the field of spintronics and magnonics. Most studies on YIG so far have been focused on bulk crystals, thin films, and nanoparticles, including variants with substitutions at the yttrium or iron site. New morphologies such as sub-micron flakes have drawn interest recently as their geometry and mechanical flexibility might enable different device architectures. However, detailed investigations combining their electronic structure and magnetic behavior remain scarce. In this work, we present a comparative study of the electronic and magnetic properties of a bulk-like YIG film and a sub-micron-sized YIG flake. Our results highlight the distinct behavior that emerges in sub-micron dimensions and point toward future uses for flake-based YIG in compact spintronics devices.

cond-mat.mtrl-sci

Statistical characterization of the spin Hall magnetoresistance in YIG/Pt heterostructures

The spin Hall magnetoresistance (SMR) is widely used to study the interplay between charge and spin currents in bilayers of a magnetic insulator and a normal metal. However, not much is known about the spatial variation of the SMR across the surface of one and the same sample. In this work, we investigate the statistical distribution of the SMR in hundreds of nominally identical Hall bar structures patterned into prototypical yttrium iron garnet (YIG)/Pt heterostructures. We find a Gaussian-distributed SMR with a narrow standard deviation of approximately 10$\,$% of the mean value in each YIG/Pt bilayer studied. However, the variation of the mean SMR between different YIG/Pt samples can be as large as ~30$\,$%, despite nominally identical fabrication conditions. This demonstrates that spatial variations of the SMR amplitude must not be neglected, in particular when comparing different heterostructures. On a microscopic level, local variations of the interface quality captured by the spin mixing conductance are the most likely origin for the observed SMR amplitude variations.

cond-mat.mtrl-sci

Ultrathin bismuth-yttrium iron garnet films with tunable magnetic anisotropy

We report on the epitaxial growth of nm-thick films of bismuth-substituted yttrium iron garnet (BiYIG) by high-temperature off-axis radio-frequency magnetron sputtering. We demonstrate accurate control of the magnetic properties by tuning of the sputtering parameters and epitaxial strain on various (111)-oriented garnet substrates. BiYIG films with up to -0.80\% lattice mismatch with the substrate remain fully strained up to 60~nm-thick, maintaining a high crystalline quality. Transmission electron microscopy and energy-dispersive X-ray spectroscopy confirm coherent epitaxial growth, the absence of defects, and limited interdiffusion at the BiYIG/substrate interface. Varying the tensile or compressive strain between -0.80\% and +0.56\% in BiYIG allows for accurate compensation of the total magnetic anisotropy through magneto-elastic coupling. The effective magnetic anisotropy of sputtered BiYIG films can be further tuned via the off-axis deposition angle and the oxygen flow during growth, which determine the cation stoichiometry. Under optimized growth conditions, a ferromagnetic resonance (FMR) linewidth of 1~mT at 10~GHz is reliably obtained even for thicknesses as low as 10~nm. We also report small FMR linewidths in ultrathin (2-5~nm) BiYIG films grown on diamagnetic substrate yttrium scandium gallium garnet. These findings highlight the promise of low-damping, strain-engineered nm-thick BiYIG films for implementing advanced functionalities in spin-orbitronic and magnonic devices. Specifically, the magnetic-anisotropy compensation and low damping enable large cone-angle magnetization dynamics immune to magnon-magnon nonlinear scattering.

cond-mat.mtrl-sci

Spin Hall magnetoresistance at the altermagnetic insulator/Pt interface

The resistance of a heavy metal can be modulated by an adjacent magnetic material through the combined effects of the spin Hall effect, inverse spin Hall effect, and dissipation of the spin accumulation at the interface. This phenomenon is known as the spin Hall magnetoresistance. The dissipation of the spin accumulation can occur via various mechanisms, with spin-transfer torque being the most extensively studied. In this work, we report the observation of spin Hall magnetoresistance at the interface between platinum and an insulating altermagnetic candidate, Ba$_2$CoGe$_2$O$_7$. Our findings reveal that this heterostructure exhibits a relatively large spin Hall magnetoresistance signal, which is anisotropic with respect to the crystal orientation of the current channel. We explore and rule out several potential explanations for this anisotropy and propose that our results may be understood in the context of the anisotropies of the spin current channels across the Pt/altermagnetic Ba$_2$CoGe$_2$O$_7$ interface.

cond-mat.mes-hall

Low-temperature-compatible iron garnet films grown by liquid phase epitaxy

Single-crystalline yttrium iron garnet (YIG) thin films (< 100 nm) form the backbone of magnonics, owing to the record-low losses affecting their magnetization dynamics. However, thin epitaxial YIG has mostly been investigated under ambient temperatures, limited by the paramagnetic losses occurring at low temperatures due to the gadolinium gallium garnet (GGG) substrates required for epitaxial growth. Driven by a growing interest in magnonic devices that can operate in cryogenic conditions and address quantum information applications, there is a strong need for iron garnet epitaxial films grown on diamagnetic substrates that can maintain low losses at low temperatures. In this work, we use liquid phase epitaxy (LPE) to grow ultrathin films of strained YIG on a commercial diamagnetic substrate, yttrium scandium gallium garnet (YSGG). We investigate their magnetization dynamics in the 3-300 K temperature range, and compare them to equivalent films grown on paramagnetic GGG. We demonstrate for LPE YIG on YSGG substrates a ferromagnetic resonance linewidth below 1 mT at 3 K, together with a very weak temperature and frequency dependence of the losses. The growth of YIG/YSGG by LPE provides a straightforward approach to producing iron garnet thin films for use in low-temperature investigations.

cond-mat.mtrl-sci

Magnetic aftereffect and Barkhausen effect in thin films of the altermagnetic candidate Mn5Si3

Altermagnetism as a third distinct type of collinear magnetic ordering lately attracts vivid attention. We here study the Hall effect response of micron-scale Hall bars patterned into Mn5Si3 thin films, an altermagnet candidate material. Recording transport data as a function of time, at fixed magnetic field magnitude, we observe a time-dependent relaxation of the Hall voltage qualitatively and quantitatively similar to the magnetic viscosity response well established in ferromagnetic films. In addition, the Hall voltage time traces feature clear unilateral steps, which we interpret as Barkhausen steps, i.e., as experimental evidence for abrupt reorientations of magnetic (Hall vector) domains in the altermagnetic candidate material. A quantitative analysis yields a Barkhausen length of around 18nm in the Hall bar devices with the smallest width of 100 nm.

cond-mat.mtrl-sci

Competing Ordinary and Hanle Magnetoresistance in Pt and Ti Thin Films

One of the key elements in spintronics research is the spin Hall effect, allowing to generate spin currents from charge currents. A large spin Hall effect is observed in materials with strong spin orbit coupling, e.g., Pt. Recent research suggests the existence of an orbital Hall effect, the orbital analogue to the spin Hall effect, which also arises in weakly spin orbit coupled materials like Ti, Mn or Cr. In Pt both effects are predicted to coexist. In any of these materials, a magnetic field perpendicular to the spin or orbital accumulation leads to additional Hanle dephasing and thereby the Hanle magnetoresistance (MR). To reveal the MR behavior of a material with both spin and orbital Hall effect, we thus study the MR of Pt thin films over a wide range of thicknesses. Careful evaluation shows that the MR of our textured samples is dominated by the ordinary MR rather than by the Hanle effect. We analyze the intrinsic properties of Pt films deposited by different groups and show that next to the resistivity also the structural properties of the film influence which MR dominates. We further show that this correlation can be found in both spin Hall active materials like Pt and orbital Hall active materials, like Ti. For both materials, the crystalline samples shows a MR attributed to the ordinary MR, whereas we find a large Hanle MR for the samples without apparent structural order. We then provide a set of rules to distinguish between the ordinary and the Hanle MR. We conclude that in all materials with a spin or orbital Hall effect the Hanle MR and the ordinary MR coexist and the purity and crystallinity of the thin film determine the dominating effect.

cond-mat.mtrl-sci

Lattice-tunable substituted iron garnets for low-temperature magnonics

The synthesis of nm-thick epitaxial films of iron garnets by physical vapor deposition has opened up exciting opportunities for the on-chip generation and processing of microwave signals encoded in magnons. However, iron garnet thin films suffer from demanding lattice-matching and stoichiometry requirements. Here a new approach to their synthesis is developed, enabling a precise and continuous tuning of iron garnet compositions based on the co-sputtering of binary oxides. By substituting a controlled proportion of iron with additional yttrium, Y$_{3}$(Y$_{x}$Fe$_{5-x}$)O$_{12}$ films of high crystalline quality are obtained, combining a widely tunable lattice parameter and excellent magnetization dynamics. This enables iron garnet thin films suited for cryogenic applications, which have long remained impractical due to microwave losses caused by paramagnetic garnet substrates. Low-temperature ferromagnetic resonance confirms the elimination of substrate paramagnetic losses for Y$_{3}$(Y$_{x}$Fe$_{5-x}$)O$_{12}$ films lattice-matched to Y$_{3}$Sc$_{2}$Ga$_{3}$O$_{12}$ (YSGG), a diamagnetic substrate. The Y$_{3}$(Y$_{x}$Fe$_{5-x}$)O$_{12}$ system can be matched to other substrates such as (Gd,Y)$_{3}$Sc$_{2}$Ga$_{3}$O$_{12}$. Bi-substituted films of (Bi$_{0.8}$Y$_{2.2}$)Fe$_{5}$O$_{12}$ also have ideal lattice matching to YSGG, demonstrating the versatility of this approach. This opens unprecedented options for cation substitutions in iron garnet films, offering a promising avenue to new properties and quantum magnonic devices operating in low-temperature environments.

cond-mat.mtrl-sci

Inductive magnon noise spectroscopy

State tomography allows to characterize quantum states, and was recently applied to reveal the dynamic magnetization state of a parametrically driven magnet. The identification of non-classical states, such as squeezed states, relies on a careful analysis of their emission and their distinction from thermal and vacuum fluctuations. A technique allowing to detect equilibrium magnetization fluctuations is a crucial first step in this regard. In this Letter, we show that inductive magnon noise spectroscopy (iMNS) allows to characterize the thermal magnetization fluctuations of a ferromagnetic thin film in a broadband coplanar waveguide-based scheme. Relative to a cold microwave background, the microwaves emitted by the equilibrium magnetization fluctuations can be detected via spectrum analysis. We provide a comprehensive picture of our microwave system by quantitatively modeling its response, including the thermalizing influence of the cables. The model allows for direct comparison to low-power broadband ferromagnetic resonance measurements with excellent agreement, corroborating the equilibrium character of the iMNS measurement by probing the linear response of the equilibrium state. Our work thus demonstrates broadband access to the equilibrium properties of magnetization fluctuations using a purely inductive approach.

cond-mat.mes-hall

Crystallization Dynamics of Amorphous Yttrium Iron Garnet Thin Films

Yttrium iron garnet (YIG) is a prototypical material in spintronics due to its exceptional magnetic properties. To exploit these properties high quality thin films need to be manufactured. Deposition techniques like sputter deposition or pulsed laser deposition at ambient temperature produce amorphous films, which need a post annealing step to induce crystallization. However, not much is known about the exact dynamics of the formation of crystalline YIG out of the amorphous phase. Here, we conduct extensive time and temperature series to study the crystallization behavior of YIG on various substrates and extract the crystallization velocities as well as the activation energies needed to promote crystallization. We find that the type of crystallization as well as the crystallization velocity depend on the lattice mismatch to the substrate. We compare the crystallization parameters found in literature with our results and find an excellent agreement with our model. Our results allow us to determine the time needed for the formation of a fully crystalline film of arbitrary thickness for any temperature.

cond-mat.mtrl-sci

Lateral Solid Phase Epitaxy of Yttrium Iron Garnet

Solid phase epitaxy is a crystallization technique used to produce high quality thin films. Lateral solid phase epitaxy furthermore enables the realization of non-planar structures, which are interesting, e.g., in the field of spintronics. Here, we demonstrate lateral solid phase epitaxy of yttrium iron garnet over an artificial edge, such that the crystallization direction is perpendicular to the initial seed. We use single crystalline garnet seed substrates partially covered by a SiOx film to study the lateral crystallization over the SiOx mesa. The yttrium iron garnet layer retains the crystal orientation of the substrate not only when in direct contact with the substrate, but also across the edge on top of the SiOx mesa. By controlling the crystallization dynamics it is possible to almost completely suppress the formation of polycrystals and to enable epitaxial growth of single crystalline yttrium iron garnet on top of mesas made from arbitrary materials. From a series of annealing experiments, we extract an activation energy of 3.0 eV and a velocity prefactor of $6.5 \times 10^{14}$ nm/s for the lateral epitaxial crystallization along the <100> direction. Our results pave the way to engineer single crystalline non-planar yttrium iron garnet structures with controlled crystal orientation.

cond-mat.mtrl-sci

Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3

The anomalous Nernst effect generates transverse voltage to the applied thermal gradient in magnetically ordered systems. The effect was previously considered excluded in compensated magnetic materials with collinear ordering. However, in the recently identified class of compensated magnetic materials, dubbed altermagnets, time-reversal symmetry breaking in the electronic band structure makes the presence of the anomalous Nernst effect possible despite the collinear spin arrangement. In this work, we investigate epitaxial Mn5Si3 thin films known to be an altermagnetic candidate. We show that the material manifests a sizable anomalous Nernst coefficient despite the small net magnetization of the films. The measured magnitudes of the anomalous Nernst coefficient reach a scale of microVolts per Kelvin. We support our magneto-thermoelectric measurements by density-functional theory calculations of the material's spin-split electronic structure, which allows for the finite Berry curvature in the reciprocal space. Furthermore, we present our calculations of the intrinsic Berry-curvature Nernst conductivity, which agree with our experimental observations.

cond-mat.mtrl-sci

Electrical detectability of magnon-mediated spin current shot noise

A magnonic spin current crossing a ferromagnet-metal interface is accompanied by spin current shot noise arising from the discrete quanta of spin carried by magnons. In thin films, e.g., the spin of so-called squeezed magnons have been shown to deviate from the common value $\hbar$, with corresponding changes in the spin noise. In experiments, spin currents are typically converted to charge currents via the inverse spin Hall effect. We here analyze the magnitude of the spin current shot noise in the charge channel for a typical electrically detected spin pumping experiment, and find that the voltage noise originating from the spin current shot noise is much smaller than the inevitable Johnson-Nyquist noise. Furthermore, we find that due to the local nature of the spin-charge conversion, the ratio of spin current shot noise and Johnson-Nyquist noise cannot be systematically enhanced by tuning the sample geometry, in contrast to the linear increase in dc spin pumping voltage with sample length. Instead, the ratio depends sensitively on material-specific transport properties. Our analysis thus provides guidance for the experimental detection of squeezed magnons through spin pumping shot noise.

cond-mat.mes-hall

Aluminium substituted yttrium iron garnet thin films with reduced Curie temperature

Magnetic garnets such as yttrium iron garnet (Y$_3$Fe$_5$O$_{12}$, YIG) are widely used in spintronic and magnonic devices. Their magnetic and magneto-optical properties can be modified over a wide range by tailoring their chemical composition. Here, we report the successful growth of Al-substituted yttrium iron garnet (YAlIG) thin films via radio frequency sputtering in combination with an ex situ annealing step. Upon selecting appropriate process parameters, we obtain highly crystalline YAlIG films with different Al$^{3+}$ substitution levels on both, single crystalline Y$_3$Al$_5$O$_{12}$ (YAG) and Gd$_3$Ga$_5$O$_{12}$ (GGG) substrates. With increasing Al$^{3+}$ substitution levels, we observe a reduction of the saturation magnetisation as well as a systematic decrease of the magnetic ordering temperature to values well below room temperature. YAlIG thin films thus provide an interesting material platform for spintronic and magnonic experiments in different magnetic phases.

cond-mat.mtrl-sci

Control of nonlocal magnon spin transport via magnon drift currents

Spin transport via magnon diffusion in magnetic insulators is important for a broad range of spin-based phenomena and devices. However, the absence of the magnon equivalent of an electric force is a bottleneck. In this work, we demonstrate the controlled generation of magnon drift currents in yttrium iron garnet/platinum heterostructures. By performing electrical injection and detection of incoherent magnons, we find magnon drift currents that stem from the interfacial Dzyaloshinskii-Moriya interaction. We can further control the magnon drift by the orientation of the magnetic field. The drift current changes the magnon propagation length by up to $\pm$ 6 % relative to diffusion. We generalize the magnonic spin transport theory to include a finite drift velocity resulting from any inversion asymmetric interaction, and obtain results consistent with our experiments.

cond-mat.mes-hall

Macroscopic time reversal symmetry breaking by staggered spin-momentum interaction

Time-reversal (T) symmetry breaking is a fundamental physics concept underpinning a broad science and technology area, including topological magnets, axion physics, dissipationless Hall currents, or spintronic memories. A best known conventional model of macroscopic T-symmetry breaking is a ferromagnetic order of itinerant Bloch electrons with an isotropic spin interaction in momentum space. Anisotropic electron interactions, on the other hand, have been a domain of correlated quantum phases, such as the T-invariant nematics or unconventional superconductors. Here we report discovery of a broken-T phase of itinerant Bloch electrons with an unconventional anisotropic spin-momentum interaction, whose staggered nature leads to the formation of two ferromagnetic-like valleys in the momentum space with opposite spin splittings. We describe qualitatively the effect by deriving a non-relativistic single-particle Hamiltonian model. Next, we identify the unconventional staggered spin-momentum interaction by first-principles electronic structure calculations in a four-sublattice antiferromagnet Mn5Si3 with a collinear checkerboard magnetic order. We show that the staggered spin-momentum interaction is set by nonrelativistic spin-symmetries which were previously omitted in relativistic physics classifications of spin interactions and topological quasiparticles. Our measurements of a spontaneous Hall effect in epilayers of antiferromagnetic Mn5Si3 with vanishing magnetization are consistent with our theory predictions. Bloch electrons with the unconventional staggered spin interaction, compatible with abundant low atomic-number materials, strong spin-coherence, and collinear antiferromagnetic order open unparalleled possibilities for realizing T-symmetry broken spin and topological quantum phases.

cond-mat.mes-hall

Anisotropic magneto-thermal transport in Co$_2$MnGa thin films

Ferromagnetic Co$_2$MnGa has recently attracted significant attention due to effects related to non-trivial topology of its band structure, however a systematic study of canonical magneto-galvanic transport effects is missing. Focusing on high quality thin films, here we systematically measure anisotropic magnetoresistance (AMR) and its thermoelectric counterpart (AMTP). We model the AMR data by free energy minimisation within the Stoner-Wohlfarth formalism and conclude that both crystalline and non-crystalline components of this magneto-transport phenomenon are present in Co$_2$MnGa. Unlike the AMR which is small in relative terms, the AMTP is large due to a change of sign of the Seebeck coefficient as a function of temperature. This fact is discussed in the context of the Mott rule and further analysis of AMTP components is presented.

cond-mat.mtrl-sci

Fast fourier transform and multi-Gaussian fitting of XRR data to determine the thickness of ALD grown thin films within the initial growth regime

While a linear growth behavior is one of the fingerprints of textbook atomic layer deposition processes, the growth often deviates from that behavior in the initial regime, i.e. the first few cycles of a process. To properly understand the growth behavior in the initial regime is particularly important for applications that rely on the exact thickness of very thin films. The determination of the thicknesses of the initial regime, however, often requires special equipment and techniques that are not always available. We propose a thickness determination method that is based on X-ray reflectivity (XRR) measurements on double layer structures, i.e. substrate/base layer/top layer. XRR is a standard thin film characterization method. Utilizing the inherent properties of fast Fourier transformation in combination with a multi-Gaussian fitting routine permits the determination of thicknesses down to $t \approx 2$ nm. We evaluate the boundaries of our model, which are given by the separation and full width at half maximum of the individual Gaussians. Finally, we compare our results from two layer stacks with data from X-ray fluorescence spectroscopy, which is a standard method for measuring ultra thin films.

cond-mat.mtrl-sci