arXiv subjects

Michel Panhans

Publications and source records attributed to Michel Panhans.

6 recordsLinked to original sources

arXiv2026

Charge Transport Framework for Crystalline pi-Conjugated Materials

Quantitative charge-transport modelling in crystalline pi-conjugated polymers requires an electronic representation that captures extended conjugation and material-specific electron-phonon interactions on equal footing. We present a Wannier-orbital-based formulation of the transient-polaron-localization (TPL) framework for quantitative charge-transport simulations in crystalline pi-conjugated polymers. By expressing all interactions directly in a Wannier representation derived from first-principles calculations, the approach avoids artificial fragmentation of polymer backbones and enables a consistent, material-specific description of electronic couplings and electron-phonon interactions. Low- and high-frequency vibrational modes are incorporated within a mode-resolved TPL formalism, yielding an effective electronic Hamiltonian that captures both dynamic disorder and polaronic renormalization. The methodology is demonstrated for the ambipolar crystalline naphthalenediimide-bithiophene copolymer, enabling a direct comparison of electron and hole transport along the polymer backbone and pi-stacking directions. The simulations reproduce key transport features, including pronounced anisotropy and higher electron than hole mobility. Additional studies on single- and bi-chain systems reveal the essential role of inter-chain coherence in supporting efficient transport along the polymer backbone. Beyond this specific system, the Wannier-orbital-based TPL framework provides a transferable route to disentangle intrinsic charge-transport mechanisms in crystalline pi-conjugated materials and establishes a foundation for future work.

cond-mat.mtrl-sci↗

arXiv2026

Interplay between Electronic Structure, Chemical Bonding, and Lattice Symmetry in Bismuth Vanadate

Bismuth vanadate (BiVO$_4$) is a prototypical oxide photocatalyst that occurs in both tetragonal and monoclinic scheelite phases with markedly different photocatalytic and photoelectrochemical activities. Accurately identifying the monoclinic phase as the ground state and explaining the origin of its symmetry-breaking distortion are unusually challenging from a theoretical perspective, with various levels of theory and associated physical interpretations for this behaviour reported in the literature. Here, we resolve these discrepancies by systematically assessing the role of exact exchange with and without spin-orbit coupling, demonstrating that an accurate treatment of electronic localization is essential to stabilize the monoclinic scheelite structure. Using this framework, we compute the electronic band structure through dense sampling of the Brillouin zone and show that the band edges in monoclinic and tetragonal BiVO$_4$ lie far from conventional high-symmetry paths, leading to substantial differences in band gaps and carrier effective masses. Choosing the exchange-correlation functional that best reproduces the crystal structure leads to excellent predictions of the band gap once excitonic and thermal effects are taken into account. In addition, we show that the monoclinic distortion is driven by charge transfer between non-equivalent oxygen sites, which breaks the lattice symmetry and is suppressed by self-interaction errors when using semi-local DFT. These results establish a direct connection between the exchange-correlation functional, electronic localization, chemical bonding, and structural stability in BiVO$_4$, providing a foundation for robust ab initio descriptions of phase stability and optoelectronic properties in such complex oxides.

cond-mat.mtrl-sci↗

arXiv2026

Ultrafast photo-thermoelectric currents in graphene junctions in the mid-infrared

Graphene is widely recognized for its ultrafast and broadband photocurrent response, but whether the broadband ultrafast characteristics are preserved at mid-infrared wavelengths with photon energies below the optical phonon energy remains an open question. Here, we investigate the carrier dynamics in graphene junctions under mid-infrared excitation using an ultrafast pump-probe photocurrent spectroscopy. We utilize dual split gate devices to demonstrate that the photo-thermoelectric effect can dominate the photoresponse of graphene also for a mid-infrared femtosecond excitation. We observe that graphene retains its broadband photocurrent response in this spectral region, but the photocurrent relaxation time increases from ca. 2 ps below 8-9 micrometer up to 3 ps at longer mid-infrared wavelengths. The absence of a pronounced phonon bottleneck in the decay dynamics at room temperature suggests an efficient interplay of electron-electron and electron-phonon scattering even for photon energies below the optical phonon energy in graphene. The observed wavelength dependence of the photocurrent relaxation times is consistent with energy-dependent theoretical relaxation times as derived from a microscopic transport theory of graphene that includes electron-phonon coupling within a Holstein-Peierls Hamiltonian.

cond-mat.mes-hall↗

arXiv2024

Hall Transport in Organic Semiconductors

We establish a universal theory to understand quasiparticle Hall effects and transverse charge-carrier transport in organic semiconductors. The simulations are applied to organic crystals inspired by rubrene and cover multiple transport regimes. This includes calculations of the intrinsic Hall conductivity in pristine crystals, which are connected with a simple description of semi-classical electron transport that involves the concept of closed electronic orbits in the band structure, which can be easily calculated in density functional theory. Furthermore, this framework is employed to simulate temperature-dependent longitudinal and transverse mobilities in rubrene. These simulations are compared to experimental findings, providing insights into these results by characterizing the non-ideality of the Hall effect due to the influence of vibrational disorder. We finally investigate the conditions for the observation of Shubnikov-de Haas oscillations in the longitudinal resistivity and quantized Hall plateaus in the transverse resistivity. A clear picture why this is not observed in rubrene is developed. These insights into classical and quantum Hall effects and their intermediates in organic semiconductors establish a blueprint for future explorations in similar systems.

cond-mat.mtrl-sci↗

arXiv2021

Efficient Time-Domain Approach for Linear Response Functions

We derive the general Kubo formula in a form that solely utilizes the time evolution of displacement operators. The derivation is based on the decomposition of the linear response function into its time symmetric and time anti-symmetric part. We relate this form to the well-known fluctuation-dissipation formula and discuss theoretical and numerical aspects of it. The approach is illustrated with an analytical example for magnetic resonance as well as a numerical example where we analyze the electrical conductivity tensor and the Chern insulating state of the disordered Haldane model. We introduce a highly efficient time-domain approach that describes the quantum dynamics of the resistivity of this model with an at least 1000-fold better performance in comparison to existing time-evolution schemes.

cond-mat.mes-hall↗

arXiv2020

Linear Scaling Quantum Transport Methodologies

In recent years, predictive computational modeling has become a cornerstone for the study of fundamental electronic, optical, and thermal properties in complex forms of condensed matter, including Dirac and topological materials. The simulation of quantum transport in realistic materials calls for the development of linear scaling, or order-$N$, numerical methods, which then become enabling tools for guiding experimental research and for supporting the interpretation of measurements. In this review, we describe and compare different order-$N$ computational methods that have been developed during the past twenty years, and which have been used extensively to explore quantum transport phenomena in disordered media. We place particular focus on the zero-frequency electrical conductivities derived within the Kubo-Greenwood and Kubo-Streda formalisms, and illustrate the capabilities of these methods to tackle the quasi-ballistic, diffusive, and localization regimes of quantum transport in the noninteracting limit. The fundamental issue of computational cost versus accuracy of various proposed numerical schemes is addressed in depth. We then illustrate the usefulness of these methods with various examples of transport in disordered materials, such as polycrystalline and defected graphene models, 3D metals and Dirac semimetals, carbon nanotubes, and organic semiconductors. Finally, we extend the review to the study of spin dynamics and topological transport, for which efficient approaches for calculating charge, spin, and valley Hall conductivities are described.

cond-mat.mes-hall↗