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Michele Laus

Publications and source records attributed to Michele Laus.

4 recordsLinked to original sources

Learning Nonlinear Heterogeneity in Physical Kolmogorov-Arnold Networks

Physical neural networks typically train linear synaptic weights while treating device nonlinearities as fixed. We show the opposite - by training the synaptic nonlinearity itself, as in Kolmogorov-Arnold Network (KAN) architectures, we yield markedly higher task performance per physical resource and improved performance-parameter scaling than conventional linear weight-based networks, demonstrating ability of KAN topologies to exploit reconfigurable nonlinear physical dynamics. We experimentally realise physical KANs in silicon-on-insulator devices we term 'Synaptic Nonlinear Elements' (SYNEs), operating at room temperature, microampere currents, 2 MHz speeds and ~750 fJ per nonlinear operation, with no observed degradation over 10^13 measurements and months-long timescales. We demonstrate nonlinear function regression, classification, and prediction of Li-Ion battery dynamics from noisy real-world multi-sensor data. Physical KANs outperform equivalently-parameterised software multilayer perceptron networks across all tasks, with up to two orders of magnitude fewer parameters, and two orders of magnitude fewer devices than linear weight based physical networks. These results establish learned physical nonlinearity as a hardware-native computational primitive for compact and efficient learning systems, and SYNE devices as effective substrates for heterogenous nonlinear computing.

cond-mat.dis-nn

Interface effects and dielectric mismatch in ultrathin silicon on insulator films

The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from 10$^{18}$ to nearly 10$^{20}$ cm$^{-3}$. P concentration is determined by Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS). Sample resistivity ($\rho$), carrier concentration ($n_e$), and mobility ($\mu_e$) are extracted by combining sheet resistance and Hall measurements in van der Pauw configuration. When $H_{SOI}$ = 30 nm, transport properties at room temperature are fully compatible with those of a similarly doped bulk Si. Progressive 2D confinement by reduction of $H_{SOI}$ below 30 nm results in a reduction of the carrier concentration and a concomitant degradation of $\mu_e$. These effects, which are steadily enhanced decreasing $n_D$, are attributed to non-passivated interface states at the SiO$_2$/Si interface and can be significantly mitigated by high temperature rapid thermal oxidation (RTO). The effectiveness of this approach was verified by electron-paramagnetic resonance (EPR) spectra and capacitance-voltage (CV) measurements, which allowed the assessment of the quality of the RTO-SiO$_2$/Si interface and the correlation with observed electrical properties. After effective interface engineering, low temperature electrical characterization revealed a significant increase in P ionization energy in samples with $H_{SOI}$ <= 15 nm, a result directly related to the dielectric mismatch.

cond-mat.mes-hall

Effect of the Density of Reactive Sites in P(S-r-MMA) Film During Al2O3 Growth by Sequential Infiltration Synthesis

Sequential infiltration synthesis (SIS) consists in a controlled sequence of metal organic precursors and co-reactant vapor exposure cycles of polymer films. Two aspects characterize a SIS process: precursor molecule diffusion within the polymer matrix and precursor molecule entrapment into polymer films via chemical reaction. In this paper, we investigated SIS process for the alumina synthesis using trimethylaluminum (TMA) and H2O in thin films of poly(styrene-random-methyl methacrylate) (P(S-r-MMA)) with variable MMA content. The amount of alumina grown in the P(S-r-MMA) films linearly depends on MMA content. A relatively low concentration of MMA in the copolymer matrix is enough to guarantee the volumetric growth of alumina in the polymer film. In pure polystyrene, metal oxide seeds grow in the sub-surface region of the film. In-situ dynamic spectroscopic ellipsometry (SE) analyses provide quantitative information about TMA diffusivity in pristine P(S-r-MMA) matrices as a function of MMA fraction, allowing further insight into the process kinetics as a function of the density of reactive sites in the polymer film. This work improves the understanding of infiltration synthesis mechanism and provides a practical approach to potentially expand the library of polymers that can be effectively infiltrated by introducing reactive sites in the polymer chain.

cond-mat.mtrl-sci

Ordering kinetic in two-dimensional hexagonal pattern of cylinder-forming PS-b-PMMA block copolymer thin films: dependence on the segregation strength

This paper reports the experimental determination of the growth exponents and activation enthalpies for the ordering process of standing cylinder-forming all-organic polystyrene-block-poly (methyl methacrylate) (PS-b-PMMA) block copolymer (BCP) thin films as a function of the BCP degree of polymerization (N). The maximum growth exponent of 1/3 is observed for the smallest BCP at the border of the order disorder transition. Both the growth exponents and the activation enthalpies exponentially decrease with the BCP segregation strength (chi N) following the same path of the diffusivity.

cond-mat.soft