arXiv subjects

Michele Reticcioli

Publications and source records attributed to Michele Reticcioli.

22 records · Page 2Linked to original sources

arXiv2019

Doping-induced insulator-metal transition in the Lifshitz magnetic insulator NaOsO3

By means of first principles schemes based on magnetically constrained density functional theory and on the band unfolding technique we study the effect of doping on the conducting behaviour of the Lifshitz magnetic insulator NaOsO3. Electron doping is treated realistically within a supercell approach by replacing sodium with magnesium at different concentrations. Our data indicate that by increasing carrier concentration the system is subjected to two types of transition: (i) insulator to bad metal at low doping and low temperature and (ii) bad metal to metal at high doping and/or high-temperature. The predicted doping-induced insulator to metal transition (MIT) has similar traits with the temperature driven MIT reported in the undoped compound. Both develops in an itinerant background and exhibit a coupled electronic and magnetic behaviour characterized by the gradual quenching of the (pseudo)-gap associated with an reduction of the local spin moment. Unlike the temperature-driven MIT, chemical doping induces substantial modifications of the band structure and the MIT cannot be fully described as a Lifshitz process.

cond-mat.str-el↗

arXiv2018

Interplay between adsorbates and polarons: CO on rutile TiO$_2$(110)

Polaron formation plays a major role in determining the structural, electrical and chemical properties of ionic crystals. Using a combination of first principles calculations and scanning tunneling microscpoy/atomic force microscopy (STM/AFM), we analyze the interaction of polarons with CO molecules adsorbed on the rutile TiO$_2$(110) surface. Adsorbed CO shows attractive coupling with polarons in the surface layer, and repulsive interaction with polarons in the subsurface layer. As a result, CO adsorption depends on the reduction state of the sample. For slightly reduced surfaces, many adsorption configurations with comparable adsorption energies exist and polarons reside in the subsurface layer. At strongly reduced surfaces, two adsorption configurations dominante: either inside an oxygen vacancy, or at surface Ti$_{5c}$ sites, coupled with a surface polaron.

cond-mat.mtrl-sci↗

arXiv2018

Formation and dynamics of small polarons on the rutile TiO$_2$(110) surface

Charge trapping and formation of polarons is a pervasive phenomenon in transition metal oxide compounds, in particular at the surface, affecting fundamental physical properties and functionalities of the hosting materials. Here we investigate via first-principle techniques the formation and dynamics of small polarons on the reduced surface of titanium dioxide, an archetypal system for polarons, for a wide range of oxygen vacancy concentrations. We report how the essential features of polarons can be adequately accounted in terms of few quantities: the local structural and chemical environment, the attractive interaction between negatively charged polarons and positively charged oxygen vacancies, and the spin-dependent polaron-polaron Coulomb repulsion. We combined molecular dynamics simulations on realistic samples derived from experimental observations with simplified static models, aiming to disentangle the various variables at play. We find that depending on the specific trapping site, different types of polarons can be formed, with distinct orbital symmetries and different degree of localization and structural distortion. The energetically most stable polaron site is the subsurface Ti atom below the undercoordinated surface Ti atom, owing to a small energy cost to distort the lattice and a suitable electrostatic potential. Polaron-polaron repulsion and polaron-vacancy attraction determine the spatial distribution of polarons as well as the energy of the polaronic in-gap state. In the range of experimentally reachable oxygen vacancy concentrations the calculated data are in excellent agreement with observations, thus validating the overall interpretation.

cond-mat.mtrl-sci↗

arXiv2016

Electron and hole doping in the relativistic Mott insulator Sr$_2$IrO$_4$: a first-principles study using band unfolding technique

We study the effects of dilute La and Rh doping on the electronic structure of the relativistic Mott insulator Sr$_2$IrO$_4$ using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site Hubbard $U$. To model doping effects, we have adopted the supercell approach that allows for a realistic treatment of structural relaxations and electronic effects beyond a purely rigid band approach. By means of the band unfolding technique we have computed the spectral function and constructed the effective band structure and Fermi surface (FS), which are readily comparable with available experimental data. Our calculations clearly indicate that La and Rh doping can be interpreted as effective electron and (fractional) hole doping, respectively. In Sr$_{2-x}$La$_x$IrO$_4$ the IMT is accompanied by a moderate renormalization of the electronic correlation substantiated by a reduction of the effective on-site Coulomb repulsion $U-J$ from 1.6 eV ($x=0$) to 1.4 eV (metallic regime $x=12.5\%$). The progressive closing of the relativistic Mott gap leads to the emergence of connected elliptical electron pockets at ($π$/2,$π$/2) and less intense features at $X$ in the FS. The substitution of Ir with the nominally isovalent Rh is accompanied by a substantial hole transfer from the Rh site to the nearest neighbor Ir sites. This shifts down the chemical potential, creates almost circular disconnected hole pockets in the FS and establishes the emergence of a two-dimensional metallic state formed by conducting Rh-planes intercalated by insulating Ir-planes. Finally, our data indicate that hole doping causes a flipping of the in-plane net ferromagnetic moment in the Rh plane and induces a magnetic transition from the AF-I to the AF-II ordering.

cond-mat.str-el↗