arXiv subjects

Michelle C. Sherrott

Publications and source records attributed to Michelle C. Sherrott.

8 recordsLinked to original sources

arXiv2017

Electrical Control of Linear Dichroism in Black Phosphorus from the Visible to Mid-Infrared

The incorporation of electrically tunable materials into photonic structures such as waveguides and metasurfaces enables dynamic control of light propagation by an applied potential. While many materials have been shown to exhibit electrically tunable permittivity and dispersion, including transparent conducting oxides (TCOs) and III-V semiconductors and quantum wells, these materials are all optically isotropic in the propagation plane. In this work, we report the first known example of electrically tunable linear dichroism, observed here in few-layer black phosphorus (BP), which is a promising candidate for multi-functional, broadband, tunable photonic elements. We measure active modulation of the linear dichroism from the mid-infrared to visible frequency range, which is driven by anisotropic quantum-confined Stark and Burstein-Moss effects, and field-induced forbidden-to-allowed optical transitions. Moreover, we observe high BP absorption modulation strengths, approaching unity for certain thicknesses and photon energies.

cond-mat.mes-hall↗

arXiv2017

High Photovoltaic Quantum Efficiency in Ultrathin van der Waals Heterostructures

We report experimental measurements for ultrathin (< 15 nm) van der Waals heterostructures exhibiting external quantum efficiencies exceeding 50%, and show that these structures can achieve experimental absorbance > 90%. By coupling electromagnetic simulations and experimental measurements, we show that pn WSe2/MoS2 heterojunctions with vertical carrier collection can have internal photocarrier collection efficiencies exceeding 70%.

cond-mat.mes-hall↗

arXiv2017

Atomic-scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Hexagonal boron nitride (h-BN) is a promising two-dimensional insulator with a large band gap and low density of charged impurities that is isostructural and isoelectronic with graphene. Here we report the chemical and atomic-scale structure of CVD-grown wafer-scale (~25 cm2) h-BN sheets ranging in thickness from 1-20 monolayers. Atomic-scale images of h-BN on Au and graphene/Au substrates obtained by scanning tunneling microscopy (STM) reveal high h-BN crystalline quality in monolayer samples. Further characterization of 1-20 monolayer samples indicates uniform thickness for wafer-scale areas; this thickness control is a result of precise control of the precursor flow rate, deposition temperature and pressure. Raman and infrared spectroscopy indicate the presence of B-N bonds and reveal a linear dependence of thickness with growth time. X-ray photoelectron spectroscopy (XPS) shows the film stoichiometry, and the B/N atom ratio in our films is 1 + 0.6% across the range of thicknesses. Electrical current transport in metal/insulator/metal (Au/h-BN/Au) heterostructures indicates that our CVD-grown h-BN films can act as excellent tunnel barriers with a high hard-breakdown field strength. Our results suggest that large-area h-BN films are structurally, chemically and electronically uniform over the wafer scale, opening the door to pervasive application as a dielectric in layered nanoelectronic and nanophotonic heterostructures.

physics.app-ph↗

arXiv2017

Experimental Demonstration of >230° Phase Modulation in Gate-Tunable Graphene-Gold Reconfigurable Mid-Infrared Metasurfaces

Metasurfaces offer significant potential to control far-field light propagation through the engineering of amplitude, polarization, and phase at an interface. We report here phase modulation of an electronically reconfigurable metasurface and demonstrate its utility for mid-infrared beam steering. Using a gate-tunable graphene-gold resonator geometry, we demonstrate highly tunable reflected phase at multiple wavelengths and show up to 237° phase modulation range at an operating wavelength of 8.50 μm. We observe a smooth monotonic modulation of phase with applied voltage from 0° to 206° at a wavelength of 8.70 μm. Based on these experimental data, we demonstrate with antenna array calculations an average beam steering efficiency of 50% for reflected light for angles up to 30°, relative to an ideal metasurface, confirming the suitability of this geometry for reconfigurable mid-infrared beam steering devices.

cond-mat.mes-hall↗

arXiv2017

Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. We interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena which have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

cond-mat.mes-hall↗

arXiv2016

Near Unity Absorption in Van der Waals Semiconductors for Ultrathin Optoelectronics

We demonstrate near unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (< 15 nm) Van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.

cond-mat.mtrl-sci↗

arXiv2014

Electronic modulation of infrared emissivity in graphene plasmonic resonators

Electronic control of blackbody emission from graphene plasmonic resonators on a silicon nitride substrate is demonstrated at temperatures up to 250 C. It is shown that the graphene resonators produce antenna-coupled blackbody radiation, manifest as narrow spectral emission peaks in the mid-IR. By continuously varying the nanoresonators carrier density, the frequency and intensity of these spectral features can be modulated via an electrostatic gate. We describe these phenomena as plasmonically enhanced radiative emission originating both from loss channels associated with plasmon decay in the graphene sheet and from vibrational modes in the SiNx.

cond-mat.mes-hall↗

arXiv2013

Tunable Large Resonant Absorption in a Mid-IR Graphene Salisbury Screen

Enhancing the interaction strength between graphene and light is an important objective for those seeking to make graphene a relevant material for future optoelectronic applications. Plasmonic modes in graphene offer an additional pathway of directing optical energy into the graphene sheet, while at the same time displaying dramatically small optical confinement factors that make them an interesting means of coupling light to atomic or molecular emitters. Here we show that graphene plasmonic nanoresonators can be placed a quarter wavelength from a reflecting surface and electronically tuned to mimic a surface with an impedance closely matched to freespace (Z0 = 377Ω). This geometry - known in early radar applications as a Salisbury screen - allows for an order of magnitude (from 2.3 to 24.5%) increase of the optical absorption in the graphene and provides an efficient means of coupling to the highly confined graphene plasmonic modes.

cond-mat.mes-hall↗