arXiv subjects

Michiel J. van Setten

Publications and source records attributed to Michiel J. van Setten.

15 recordsLinked to original sources

arXiv2026

More is not always better: Dissociative photoionization limits the EUV absorbing photoacid generator pentafluorophenyl triflate in photolithography

Pentafluorophenyl triflate has been explored as a highly absorbing neutral photoacid generator (PAG) candidate for next generation chemically amplified resists used in extreme ultraviolet (EUV) lithography. Although increased fluorination enhances EUV absorption, this study demonstrates that such an approach does not necessarily improve photoacid generation efficiency. Using photoelectron-photoion coincidence (PEPICO) spectroscopy at the 92 eV photon energy of the EUV scanners in combination with quantum chemical calculations, the dissociative photoionization of pentafluorophenyl triflate was systematically investigated. The photoionization mass spectrum reveals extensive fragmentation, with the parent ion contributing only 3.1 % of the total signal and CF$_3^+$ representing the dominant product ion. Computed appearance energies align well with experimental trends and support a sequential fragmentation pathway involving loss of SO$_2$, CF$_3$, and CO. Crucially, none of the major dissociation channels yield precursors capable of forming triflic acid, the strong photoacid required for efficient deprotection reactions in chemically amplified resists. Combined with previous dissociative electron attachment studies indicating similarly unfavorable fragmentation, the results demonstrate that despite its high EUV absorption cross section, pentafluorophenyl triflate is unsuitable as a PAG for EUV lithography. The findings highlight the importance of understanding fundamental photoionization and electron interaction mechanisms to guide the rational design of next generation high performance EUV photoresists.

physics.chem-ph↗

arXiv2026

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O

Ternary and quaternary amorphous oxide semiconductors have many properties that make them promising candidates for use in electronic applications like display, memory, and back end of line logic. However, finding the right material for a given application and optimizing its properties, deposition, and integration, requires a thorough understanding of the physics and chemistry at play. When properly carried out, first principles computations can play a crucial role in enhancing this understanding. In this work, we highlight several pitfalls often observed in research applying these computations, with the Zn-Sn-O system as an example. We show that a proper understanding of the fundamental differences between the physics of the crystalline and amorphous or disordered phases is crucial, as is a proper statistical sampling of structural models. For the Zn-Sn-O system we conclude that from a performance point of view, mobility and initial threshold voltage, it is a promising material class. However, our computed results show that a similar sensitivity to hydrogen induced doping may be present as in IGZO.

cond-mat.mtrl-sci↗

arXiv2026

Revealing the Partially Coherent Nature of Transport in IGZO

Thin-film transistors based on amorphous oxide semiconductors (AOS) are promising candidates for enabling further DRAM scaling and 3D integration, which are critical for advanced computing. Despite extensive research, the charge transport mechanism in these disordered semiconductors remains poorly understood. In this work, we investigate charge transport in the archetypical AOS material, indium gallium zinc oxide (IGZO), across a range of compositions and temperatures using thin-film transistors and Hall bar structures. Our results show that the electrons involved in transport exhibit partially spatial coherence and non-degenerate conduction. Under these conditions, transport is dominated by electron transfer across insulating gaps between locally coherent regions, rather than by degenerate percolative transport above a mobility edge, or by localized-state hopping, both of which are widely assumed in the literature. While fluctuation-induced tunnelling has previously been invoked to describe low-temperature transport in oxide transistors, we show that such behavior originates from partially coherent electronic states and develop a field-effect-aware fluctuation-induced tunnelling (FEAFIT) framework that explicitly accounts for gate modulation of the tunneling landscape. The FEAFIT model accurately predicts experimental data across all compositions, temperatures, and gate voltages, enabling extraction of fundamental transport parameters. These tunnelling parameters are then correlated with electron coherence dimensions and the degree of energetic disorder obtained from first-principles calculations. Our findings advance the fundamental understanding of charge transport in AOS-based transistors and provide a foundation for further performance improvements

cond-mat.mtrl-sci↗

arXiv2025

Unraveling the Reaction Mechanisms in a Chemically Amplified EUV Photoresist from a Combined Theoretical and Experimental Approach

Extreme ultraviolet (EUV) lithography has revolutionized high-volume manufacturing of nanoscale components, enabling the production of smaller, denser, and more energy efficient integrated circuit devices. Yet, the use of EUV light results in ionization driven chemistry within the imaging materials of lithography, the photoresists. The complex interplay of ionization, generation of primary and secondary electrons, and the subsequent chemical mechanisms leading to image formation in photoresists has been notoriously difficult to study. In this work, we deploy photoemission spectroscopy with a 92 eV EUV light source combined with first-principles simulations to unravel the chemical changes occurring during exposure in a model chemically amplified photoresist. The results reveal a surprising chemical reaction pathway, namely the EUV-induced breakdown of the photoacid generator (PAG), which is a critical component in the EUV mechanism. This previously unobserved reaction mechanism manifests as changes in intensity of the valence band peaks of the EUV photoemission spectrum, which are linked to degradation of the PAG via an advanced atomistic simulation framework. Our combined experimental and theoretical approach shows that EUV photoemission can simultaneously resolve chemical dynamics and the production of primary and secondary electrons, giving unique insights into the chemical transformation of photoresist materials. Our results pave the way for utilizing accessible, table-top EUV spectroscopy systems for observing EUV photoresist chemical dynamics, with the potential for time-resolved measurements of photoemission processes in the future.

cond-mat.mtrl-sci↗

arXiv2025

Fundamental Understanding of Exposure and Process Chemistry for Enhanced Lithography and Stability of Metal Oxide Resists

Metal oxide resists (MORs) have shown great promise for high resolution patterning in extreme ultraviolet (EUV) lithography, with potential for integration into high volume manufacturing. However, MORs have recently been shown to exhibit sensitivity to process conditions and environment, leading to critical dimension (CD) variation. While this variation can be reduced with proper process control, there is little knowledge on how these aspects affect the image formation mechanism. To bridge these knowledge gaps, we deploy a coordinated, fundamentals-focused approach to yield deep insights into MOR exposure and process chemistry. Our results on a model MOR, an n-butyl Sn-Oxo system, reveal how parameters such as exposure dose, post-exposure bake temperature, and atmospheric species influence the image formation mechanism. Our results, and the coordinated approach using correlative spectroscopies, provide a strong foundation for understanding the image formation mechanism in MOR materials with potential to link mechanistic aspects to CD variation.

cond-mat.mtrl-sci↗

arXiv2025

Peak Broadening in Photoelectron Spectroscopy of Amorphous Polymers: the Leading Role of the Electrostatic Landscape

The broadening in photoelectron spectra of polymers can be attributed to several factors, such as light source spread, spectrometer resolution, finite lifetime of the hole state, and solid-state effects. Here, for the first time, we set up a computational protocol to assess the peak broadening induced for both core and valence levels by solid-state effects in four amorphous polymers by using a combination of density functional theory, many-body perturbation theory, and classical polarizable embedding. We show that intrinsic local inhomogeneities in the electrostatic environment induce a Gaussian broadening of $0.2$-$0.7$~eV in the binding energies of both core and semi-valence electrons, corresponding to a full width at half maximum (FWHM) of $0.5$-$1.7$~eV for the investigated systems. The induced broadening is larger in acrylate- than in styrene- based polymers, revealing the crucial role of polar groups in controlling the roughness of the electrostatic landscape in the solid matrix.

cond-mat.mtrl-sci↗

arXiv2024

Dissociative photoionization of EUV lithography photoresist models

The dissociative photoionization of \textit{tert}-butyl methyl methacrylate, a monomer unit found in many ESCAP resists, was investigated in a gas phase photoelectron photoion coincidence experiment employing extreme ultraviolet (EUV) synchrotron radiation at 13.5 nm. It was found that the interaction of EUV photons with the molecules leads almost exclusively to dissociation. However, the ionization can also directly deprotect the ester function, thus inducing the solubility switch wanted in a resist film. These results serve as a building block to reconstruct the full picture of the mechanism in widely used chemically amplified resist thin films, provide a knob to tailor more performant resist materials, and will aid interpreting advanced ultrafast time-resolved experiments.

cond-mat.mtrl-sci↗

arXiv2024

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano) electronic devices, often leads to residual stress in the different layers present. This stress gradient can change many of the material properties and leads to desired or undesired effects, especially in the active part of the transistor, its channel. Measuring, understanding, and, ultimately, controlling the stress fields is hence crucial for many design steps.The level of stress can in principle be measured by micro-Raman spectroscopy. This, however, requires \emph{a priori} knowledge of the mechanical properties of the material. The mechanical properties start to deviate from the bulk values when film dimensions become thinner than 5 nm. If this effect is ignored, errors of up to 400\% can be introduced in the extracted stress profile. In this work, we illustrate this effect for a range of Si (001) slabs with different silicon film thickness, ranging from 5 to 0.7 nm and provide best practices for the proper interpretation of micro-Raman stress measurements.

cond-mat.mtrl-sci↗

arXiv2024

Photoemission Spectroscopy on photoresist materials: A protocol for analysis of radiation sensitive materials

Device architectures and dimensions are now at an unimaginable level not thought possible even 10 years ago. The continued downscaling, following the so-called Moore's law, has motivated the development and use of extreme ultraviolet (EUV) lithography scanners with specialized photoresists. Since the quality and precision of the transferred circuit pattern is determined by the EUV induced chemical changes in the photoresist, having a deep understanding of these chemical changes is of pivotal importance. For this purpose, several spectroscopic and material characterization techniques have already been employed so far. Among them, photoemission can be essential as it not only allows direct probing of chemical bonds in a quantitative way but also provides useful information regarding the generation and distribution of primary and secondary electrons. However, since high energy photons are being employed for characterization of a photosensitive material, modification of the sample during the measurement is possible and this must be considered when investigating the chemical changes in the photoresist before and after exposure to EUV light.

physics.chem-ph↗

arXiv2022

Modeling X-ray Photoelectron Spectroscopy of Macromolecules Using GW

We propose a simple additive approach to simulate X-ray photoelectron spectra (XPS) of macromolecules based on the $GW$ method. Single-shot $GW$ ($G_0W_0$) is a promising technique to compute accurate core-electron binding energies (BEs). However, its application to large molecules is still unfeasible. To circumvent the computational cost of $G_0W_0$, we break the macromolecule into tractable building blocks, such as isolated monomers, and sum up the theoretical spectra of each component, weighted by their molar ratio. In this work, we provide a first proof of concept by applying the method to four test polymers and one copolymer, and show that it leads to an excellent agreement with experiments. The method could be used to retrieve the composition of unknown materials and study chemical reactions, by comparing the simulated spectra with experimental ones.

cond-mat.mtrl-sci↗

arXiv2019

Reproducibility in $G_0W_0$ Calculations for Solids

Ab initio many-body perturbation theory within the $GW$ approximation is a Green's function formalism widely used in the calculation of quasiparticle excitation energies of solids. In what has become an increasingly standard approach, Kohn-Sham eigenenergies, generated from a DFT calculation with a strategically-chosen exchange correlation functional ``starting point'', are used to construct $G$ and $W$, and then perturbatively corrected by the resultant $GW$ self-energy. In practice, there are several ways to construct the $GW$ self-energy, and these can lead to variations in predicted quasiparticle energies. For example, for ZnO and TiO$_2$, reported $GW$ fundamental gaps can vary by more than 1 eV. In this work, we address the convergence and key approximations in contemporary $G_0W_0$ calculations, including frequency-integration schemes and the treatment of the Coulomb divergence in the exact-exchange term. We study several systems,and compare three different $GW$ codes: BerkeleyGW, Abinit and Yambo. We demonstrate, for the first time, that the same quasiparticle energies for systems in the condensed phase can be obtained with different codes, and we provide a comprehensive assessment of implementations of the $GW$ approximation.

cond-mat.mtrl-sci↗

arXiv2018

Computationally-driven, high throughput identification of CaTe and Li$_\textrm{3}$Sb as promising candidates for high mobility $p$-type transparent conducting materials

High-performance $p$-type transparent conducting materials (TCMs) must exhibit a rare combination of properties including high mobility, transparency and $p$-type dopability. The development of high-mobility/conductivity $p$-type TCMs is necessary for many applications such as solar cells, or transparent electronic devices. Oxides have been traditionally considered as the most promising chemical space to dig out novel $p$-type TCMs. However, non-oxides might perform better than traditional $p$-type TCMs (oxides) in terms of mobility. We report on a high-throughput (HT) computational search for non-oxide $p$-type TCMs from a large dataset of more than 30,000 compounds which identified CaTe and Li$_\textrm{3}$Sb as very good candidates for high-mobility $p$-type TCMs. From our calculations, both compounds are expected to be $p$-type dopable: intrinsically for Li$_\textrm{3}$Sb while CaTe would require extrinsic doping. Using electron-phonon computations, we estimate hole mobilities at room-temperature to be about 20 and 70 cm$^2$/Vs for CaTe and Li$_\textrm{3}$Sb, respectively. The computed hole mobility for Li$_\textrm{3}$Sb is quite exceptional and comparable with the electron mobility in the best $n$-type TCMs.

cond-mat.mtrl-sci↗

arXiv2016

$GW$100: a plane wave perspective for small molecules

In a recent work, van Setten and coworkers have presented a carefully converged $G_0W_0$ study of 100 closed shell molecules [J. Chem. Theory Comput. 11, 5665 (2015)]. For two different codes they found excellent agreement to within few 10 meV if identical Gaussian basis sets were used. We inspect the same set of molecules using the projector augmented wave method and the Vienna ab initio simulation package (VASP). For the ionization potential, the basis set extrapolated plane wave results agree very well with the Gaussian basis sets, often reaching better than 50 meV agreement. In order to achieve this agreement, we correct for finite basis set errors as well as errors introduced by periodically repeated images. For electron affinities below the vacuum level differences between Gaussian basis sets and VASP are slightly larger. We attribute this to larger basis set extrapolation errors for the Gaussian basis sets. For quasi particle (QP) resonances above the vacuum level, differences between VASP and Gaussian basis sets are, however, found to be substantial. This is tentatively explained by insufficient basis set convergence of the Gaussian type orbital calculations as exemplified for selected test cases.

cond-mat.mtrl-sci↗

arXiv2016

Benchmark of GW approaches for the GW100 testset

For the recent GW100 test set of molecular ionization energies, we present a comprehensive assessment of different GW methodologies: fully self-consistent GW (scGW), quasiparticle self-consistent GW (qsGW), partially self-consistent GW0 (scGW0), perturbative GW (G0W0) and optimized G0W0 based on the minimization of the deviation from the straight-line error (DSLE-minimized GW). We compare our GW calculations to coupled-cluster singles, doubles, and perturbative triples [CCSD(T)] reference data for GW100. We find scGW and qsGW ionization energies in excellent agreement with CCSD(T), with discrepancies typically smaller than 0.3 eV (scGW) respectively 0.2 eV (qsGW). For scGW0 and G0W0 the deviation from CCSD(T) is strongly dependent on the starting point. We further relate the discrepancy between the GW ionization energies and CCSD(T) to the deviation from straight line error (DSLE). In DSLE-minimized GW calculations, the DSLE is significantly reduced, yielding a systematic improvement in the description of the ionization energies.

physics.chem-ph↗

arXiv2009

First principles modelling of magnesium titanium hydrides

Mixing Mg with Ti leads to a hydride Mg(x)Ti(1-x)H2 with markedly improved (de)hydrogenation properties for x < 0.8, as compared to MgH2. Optically, thin films of Mg(x)Ti(1-x)H2 have a black appearance, which is remarkable for a hydride material. In this paper we study the structure and stability of Mg(x)Ti(1-x)H2, x= 0-1 by first-principles calculations at the level of density functional theory. We give evidence for a fluorite to rutile phase transition at a critical composition x(c)= 0.8-0.9, which correlates with the experimentally observed sharp decrease in (de)hydrogenation rates at this composition. The densities of states of Mg(x)Ti(1-x)H2 have a peak at the Fermi level, composed of Ti d states. Disorder in the positions of the Ti atoms easily destroys the metallic plasma, however, which suppresses the optical reflection. Interband transitions result in a featureless optical absorption over a large energy range, causing the black appearance of Mg(x)Ti(1-x)H2.

cond-mat.mtrl-sci↗