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Michihisa Yamamoto

Publications and source records attributed to Michihisa Yamamoto.

At least 19 recordsLinked to original sources

Switchable Magnetoelectric Transport in Graphene via a Van der Waals Multiferroic

Electric and magnetic control of transport properties at atomic interfaces is central to the development of next generation electronics and spintronics. Van der Waals multiferroics materials that simultaneously host dielectric and magnetic orders down to the monolayer limit offer a promising platform for such interfacial control, yet the realization of electronic functionalities that exploit the unique attributes of van der Waals multiferroics has largely remained elusive. Here, we realize a van der Waals heterostructure comprising graphene and the multiferroic CuCrP2S6, enabling gate-switchable magnetoelectric transport in graphene, mediated by the multiferroic layer. The charge-neutrality resistance peak of graphene exhibits pronounced hysteresis arising from polarization flip in the multiferroic state. Application of an in-plane magnetic field shifts this peak in a polarization-dependent manner, revealing magnetic-field-induced polarization modulation a direct signature of the magnetoelectric effect. Furthermore, cooling the device under an applied electric field enables domain control of the multiferroic order, allowing reversible switching of the interfacial magnetoelectric transport. These results provide the first demonstration of interfacial magnetoelectric transport in a vdW heterostructure, and establish a pathway for engineering two-dimensional van der Waals interfaces for functional device applications.

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Eigenstate control of plasmon wavepackets with electron-channel blockade

Coherent manipulation of plasmon wavepackets in solid-state systems is crucial for advancing nanoscale electronic devices, offering a unique platform for quantum information processing based on propagating quantum bits. Controlling the eigenstate of plasmon wavepackets is essential, as it determines its propagation speed and hence the number of quantum operations that can be performed during its flight-time through a quantum system. When plasmon wavepackets are generated by short voltage pulses and transmitted through nanoscale devices, they distribute among multiple electron conduction channels via Coulomb interactions, a phenomenon known as charge fractionalisation. This spreading complicates plasmon manipulation in quantum circuits and makes precise control of the eigenstates of plasmon wavepackets challenging. Using a cavity, we demonstrate the ability to isolate and select electron conduction channels contributing to plasmon excitation, thus enabling precise control of plasmon eigenstate. Specifically, we observe an electron-channel blockade effect, where charge fractionalisation into cavity-confined channels is suppressed due to the plasmon's narrow energy distribution, enabling more stable and predictable plasmonic circuits. This technique provides a versatile tool for designing plasmonic circuits, offering the ability to tailor plasmon speed through local parameters, minimise unwanted plasmon excitation in adjacent circuits, and enable the precise selection of electron-channel plasmon eigenstates in quantum interferometers.

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Time-bin qubit architecture using quantum Hall edge channels

We present the basic elements for a modular architecture for time-bin encoded qubits based on quantum Hall edge channels, forming the foundation of a scalable electronic quantum information platform named TEMPO (Time-binned Electronic Modular Platform for Qubits). Quantum states are encoded in temporally separated edge magnetoplasmon (EMP) wave packets propagating along a single chiral edge, eliminating the need for spatial path separation and enhancing coherence. The platform supports full qubit operations$\unicode{x2013}$including initialization, phase modulation, readout, and two-qubit entangling gates$\unicode{x2013}$by leveraging dynamically tunable quantum point contacts and electrostatic control of interferometric loops. We consider the linear dispersion and gate-induced velocity control on EMP propagation and describe strategies for maintaining waveform integrity. Various single-electron sources, including ohmic injection and capacitive excitation, are discussed in the context of coherence. Multi-qubit operations are enabled through synchronized injection and engineered Coulomb interactions between adjacent channels, while single-qubit readout is addressed via spin-based or capacitive charge sensors. Our approach integrates gate-tunable coherent control of chiral edge states, offering a comprehensive pathway toward scalable electron quantum optics in solid-state platforms.

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High-temperature helical edge states in BiSbTeSe$_2$/graphene van der Waals heterostructure

Van der Waals heterostructures have been used to tailor atomic layers into various artificial materials through interactions at heterointerfaces. The interplay between the band gap created by the band folding of the interfacial potential and the band inversion driven by enhanced spin-orbit interaction (SOI) through band hybridization enables us to realize a two-dimensional topological insulator (2D-TI). Here we report the realization of graphene 2D-TIs by epitaxial growth of three-dimensional topological insulator (3D-TI) BiSbTeSe$_2$ ultrathin films on graphene. By increasing the BiSbTeSe$_2$ thickness from 2 nm to 9 nm to enhance SOI on graphene, the electronic state is altered from the trivial Kekul${é}$ insulator to the 2D-TI. The nonlocal transport reveals the helical edge conduction which survives up to 200 K at maximum. Our graphene 2D-TI is stable, easy to make electrical contacts, and of high quality. It offers various applications including spin-current conversion and platforms for Majorana fermions in junctions to superconductors.

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Electrical control of a Kondo spin screening cloud

Quantitative analysis of quantum many-body systems, consisting of numerous itinerant electrons that interact with localized spins or electrons, is a long-standing issue. The Kondo cloud, a quantum many-body object of conduction electrons that screens a single localized spin, is the building block of such strongly correlated electronic systems. While quantitative analysis of the Kondo cloud associated with a single magnetic impurity is well established for uniform conduction electrons, the fundamental properties of a deformed Kondo cloud influenced by conduction electrons with a modulated density of states remain unsolved. Here we report engineering of the Kondo cloud deformation by confining a part of the cloud into a quantum box called the Kondo box that mimics realistic material systems. We demonstrate quantitative control of the Kondo cloud by developing a way of tuning quantum interference in the box and monitoring the Kondo entanglement. The temperature dependence of the entanglement reveals counterintuitively that the cloud shape is altered mainly outside the box although the quantum interference in the box is tuned. Our work provides a way to simulate various strongly correlated systems by integrating the Kondo cloud, which is not possible in the current theoretical framework.

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Electronic interferometry with ultrashort plasmonic pulses

Electronic flying qubits offer an interesting alternative to photonic qubits: electrons propagate slower, hence easier to control in real time, and Coulomb interaction enables direct entanglement between different qubits. Although their coherence time is limited, flying electrons in the form of picosecond plasmonic pulses could be competitive in terms of the number of achievable coherent operations. The key challenge in achieving this critical milestone is the development of a new technology capable of injecting 'on-demand' single-electron wavepackets into quantum devices, with temporal durations comparable to or shorter than the device dimensions. Here, we take a significant step towards achieving this regime in a quantum nanoelectronic system by injecting ultrashort single-electron plasmonic pulses into a 14-micrometer-long Mach-Zehnder interferometer. Our results establish that quantum coherence is robust under the on-demand injection of ultrashort plasmonic pulses, as evidenced by the observation of coherent oscillations in the single-electron regime. Building on this, our results demonstrate for the first time the existence of a new "non-adiabatic" regime that is prominent at high frequencies. This breakthrough highlights the potential of flying qubits as a promising alternative to localised qubit architectures, offering advantages such as a reduced hardware footprint, enhanced connectivity, and scalability for quantum information processing.

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Semiconductor Circuits for Quantum Computing with Electronic Wave Packets

Standard approaches to quantum computing require significant overhead to correct for errors. The hardware size for conventional quantum processors in solids often increases linearly with the number of physical qubits, such as for transmon qubits in superconducting circuits or electron spin qubits in quantum dot arrays. While photonic circuits based on flying qubits do not suffer from decoherence or lack of potential scalability, they have encountered significant challenges to overcome photon loss in long delay circuits. Here, we propose an alternative approach that utilizes flying electronic wave packets propagating in solid-state quantum semiconductor circuits. Using a novel time-bin architecture for the electronic wave packets, hardware requirements are drastically reduced because qubits can be created on-demand and manipulated with a common hardware element, unlike the localized approach of wiring each qubit individually. The electronic Coulomb interaction enables reliable coupling and readout of qubits. Improving upon previous devices, we realize electronic interference at the level of a single quantized mode that can be used for manipulation of electronic wavepackets. This important landmark lays the foundation for fault-tolerant quantum computing with a compact and scalable architecture based on electron interferometry in semiconductors.

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Heat-Driven Electron-Motion in a Nanoscale Electronic Circuit

We study the interaction between two closely spaced but electrically isolated quasi-one-dimensional electrical wires by a drag experiment. In this work we experimentally demonstrate the generation of current in an unbiased (drag) wire, which results from the interactions with a neighboring biased (drive) wire. The direction of the drag current depends on the length of the one-dimensional wire with respect to the position of the barrier in the drag wire. When we additionally form a potential barrier in the drive wire, the direction of the drag current is determined by the relative position of the two barriers. We interpret this behavior in terms of electron excitations by phonon-mediated interactions between the two wires in presence of the electron scattering inside the drive wire.

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Temperature-induced phase transitions in the quantum Hall magnet of bilayer graphene

The quantum Hall system can be used to study many-body physics owing to its multiple internal electronic degrees of freedom and tunability. While quantum phase transitions have been studied intensively, research on the temperature-induced phase transitions of this system is limited. We measured the pure bulk conductivity of a quantum Hall antiferromagnetic state in bilayer graphene over a wide range of temperatures and revealed the two-step phase transition associated with the breaking of the long-range order and short-range antiferromagnetic order. Our findings are fundamental to understanding electron correlation in quantum Hall systems.

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Spin-valley Hall transport induced by spontaneous symmetry breaking in half-filled zero Landau level of bilayer graphene

Intrinsic Hall conductivity, emerging when chiral symmetry is broken, is at the heart of future low energy consumption devices because it can generate non-dissipative charge neutral current. A symmetry breaking state is also induced by electronic correlation even for the centro-symmetric crystalline materials. However, generation of non-dissipative charge neutral current by intrinsic Hall conductivity induced by such spontaneous symmetry breaking is experimentally elusive. Here we report intrinsic Hall conductivity and generation of a non-dissipative charge neutral current in a spontaneous antiferromagnetic state of zero Landau level of bilayer graphene, where spin and valley contrasting Hall conductivity has been theoretically predicted. We performed nonlocal transport experiment and found cubic scaling relationship between the local and nonlocal resistance, as a striking evidence of the intrinsic Hall effect. Observation of such spontaneous Hall transport is a milestone toward understanding the electronic correlation effect on the non-dissipative transport. Our result also paves a way toward electrical generation of a spin current in non-magnetic graphene via coupling of spin and valley in this symmetry breaking state combined with the valley Hall effect.

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Supercurrent in Graphene Josephson Junctions with Narrow Trenches in the Quantum Hall Regime

Coupling superconductors to quantum Hall edge states is the subject of intense investigation as part of the ongoing search for non-abelian excitations. Our group has previously observed supercurrents of hundreds of picoamperes in graphene Josephson junctions in the quantum Hall regime. One of the explanations of this phenomenon involves the coupling of an electron edge state on one side of the junction to a hole edge state on the opposite side. In our previous samples, these states are separated by several microns. Here, a narrow trench perpendicular to the contacts creates counterpropagating quantum Hall edge channels tens of nanometres from each other. Transport measurements demonstrate a change in the low-field Fraunhofer interference pattern for trench devices and show a supercurrent in both trench and reference junctions in the quantum Hall regime. The trench junctions show no enhancement of quantum Hall supercurrent and an unexpected supercurrent periodicity with applied field, suggesting the need for further optimization of device parameters.

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Investigation of Supercurrent in the Quantum Hall Regime in Graphene Josephson Junctions

In this study, we examine multiple encapsulated graphene Josephson junctions to determine which mechanisms may be responsible for the supercurrent observed in the quantum Hall (QH) regime. Rectangular junctions with various widths and lengths were studied to identify which parameters affect the occurrence of QH supercurrent. We also studied additional samples where the graphene region is extended beyond the contacts on one side, making that edge of the mesa significantly longer than the opposite edge. This is done in order to distinguish two potential mechanisms: a) supercurrents independently flowing along both non-contacted edges of graphene mesa, and b) opposite sides of the mesa being coupled by hybrid electron-hole modes flowing along the superconductor/graphene boundary. The supercurrent appears suppressed in extended junctions, suggesting the latter mechanism.

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Electrical control of a solid-state flying qubit

Solid-state approaches to quantum information technology are attractive because they are scalable. The coherent transport of quantum information over large distances, as required for a practical quantum computer, has been demonstrated by coupling solid-state qubits to photons1. As an alternative approach for a spin-based quantum computer, single electrons have also been transferred between distant quantum dots in times faster than their coherence time2, 3. However, there have been no demonstrations to date of techniques that can coherently transfer scalable qubits and perform quantum operations on them at the same time. The resulting so-called flying qubits are attractive because they allow for control over qubit separation and non-local entanglement with static gate voltages, which is a significant advantage over other solid-state qubits in confined systems for integration of quantum circuits. Here we report the transport and manipulation of qubits over distances of 6 microns within 40 ps, in an Aharonov-Bohm ring connected to two-channel wires that have a tunable tunnel coupling between channels. The flying qubit state is defined by the presence of a travelling electron in either channel of the wire, and can be controlled without a magnetic field. Our device has shorter quantum gates, longer coherence lengths (~86 μm at 70 mK), and shorter operation times (~10 ps or 100 GHz) than other solid-state flying qubit implementations4, 5, which makes our solid-state flying qubit potentially scalable.

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Landau level evolution driven by band hybridization in mirror symmetry broken ABA-stacked trilayer graphene

Layer stacking and crystal lattice symmetry play important roles in the band structure and the Landau levels of multilayer graphene. ABA-stacked trilayer graphene possesses mirror-symmetry-protected monolayer-like and bilayer-like band structures. Broken mirror symmetry by a perpendicular electric field therefore induces hybridization between these bands and various quantum Hall phases emerge. We experimentally explore the evolution of Landau levels in ABA-stacked trilayer graphene under electric field. We observe a variety of valley and orbital dependent Landau level evolutions. These evolutions are qualitatively well explained by considering the hybridization between multiple Landau levels possessing close Landau level indices and the hybridization between every third Landau level orbitals due to the trigonal warping effect. These observations are consistent with numerical calculations. The combination of experimental and numerical analysis thus reveals the entire picture of Landau level evolutions decomposed into the monolayer- and bilayer-like band contributions in ABA-stacked trilayer graphene.

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Critical current scaling in long diffusive graphene-based Josephson junctions

We present transport measurements on long diffusive graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ~9$μ$m but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in the these junctions spans a range from a few nA up to more than $5μ$A, while the Thouless energy, ETh, covers almost two orders of magnitude. Over much of this range, the product of the critical current and the normal resistance IcRn is found to scale linearly with ETh, as expected from theory. However, the ratio IcRn /ETh is found to be 0.1-0.2: much smaller than the predicted ~10 for long diffusive SNS junctions.

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Injection of a single electron from static to moving quantum dots

We study the injection mechanism of a single electron from a static quantum dot into a moving quantum dot created in a long depleted channel with surface acoustic waves (SAWs). We demonstrate that such a process is characterized by an activation law with a threshold that depends on the SAW amplitude and the dot-channel potential gradient. By increasing sufficiently the SAW modulation amplitude, we can reach a regime where the transfer is unitary and potentially adiabatic. This study points at the relevant regime to use moving dots in quantum information protocols.

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Supercurrent in the quantum Hall regime

A novel promising route for creating topological states and excitations is to combine superconductivity and the quantum Hall (QH) effect. Despite this potential, signatures of superconductivity in the quantum Hall regime remain scarce, and a superconducting current through a QH weak link has so far eluded experimental observation. Here we demonstrate the existence of a new type of supercurrent-carrying states in a QH region at magnetic fields as high as 2Tesla. The observation of supercurrent in the quantum Hall regime marks an important step in the quest for exotic topological excitations such as Majorana fermions and parafermions, which may find applications in fault-tolerant quantum computations.

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Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene

Valley is a useful degree of freedom for non-dissipative electronics since valley current that can flow even in an insulating material does not accompany electronic current. We use dual-gated bilayer graphene in the Hall bar geometry to electrically control broken inversion symmetry or Berry curvature as well as the carrier density to generate and detect the pure valley current. We find a large nonlocal resistance and a cubic scaling between the nonlocal resistance and the local resistivity in the insulating regime at zero-magnetic field and 70 K as evidence of the pure valley current. The electrical control of the valley current in the limit of zero conductivity allows non-dissipative induction of valley current from electric field and thus provides a significant contribution to the advancement of non-dissipative electronics.

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