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Michio Watanabe

Publications and source records attributed to Michio Watanabe.

16 recordsLinked to original sources
arXiv2023

Anthropogenic contributions to slow warming over 1998-2012

The observed global mean surface temperature increase from 1998 to 2012 was slower than that since 1951. The relative contributions of all relevant factors including climate forcers, however, have not been comprehensively analyzed. Using a reduced-complexity climate model and an observationally constrained statistical model, we find that La Nina cooling and a descending solar cycle contributed approximately 50% and 26% of the total warming slowdown during 1998-2012 compared to 1951-2012. Furthermore, reduced ozone-depleting substances and methane accounted for roughly a quarter of the total warming slowdown, which can be explained by changes in atmospheric concentrations. We identify that human factors played an important role in slowing global warming during 1998-2012, shedding light on the evidence for controlling global warming by reducing greenhouse gas emissions.

physics.ao-ph↗
arXiv2020

Source attributions of radiative forcing by regions, sectors, and climate forcers

It is important to understand how the emissions of different regions, sectors, or climate forcers play a role on pathways toward the Paris Agreement temperature targets. There are however methodological challenges for attributing individual contributions due to complexities associated with a variety of climate forcers affecting the climate system on different spatial and temporal scales. Here, we use the latest historical and future emissions data for a comprehensive set of climate forcers as well as land-use datasets and apply the normalized marginal approach to quantify the forcing contributions of regions, sectors and forcing agents toward the 2C and 1.5C targets. We show that most of the worldwide regions and sectors need to maintain forcing levels not higher than present levels to attain the 1.5C target of the Paris Agreement, while slightly higher future forcing levels than present levels are allowed for the 2C target. Our results illustrate the importance of negative CO2 emissions, which contribute -0.75+/-0.44 Wm-2 and -0.42+/-0.27 Wm-2 to the 2C and 1.5C targets. Less negative forcings, or more positive forcings are also identified for the land-use albedo for the 2C and 1.5C scenarios compared to existing studies.

physics.ao-ph↗
arXiv2009

Film-thickness dependence of 10 GHz Nb coplanar-waveguide resonators

We have studied Nb lambda/2 coplanar-waveguide (CPW) resonators whose resonant frequencies are 10-11 GHz. The resonators have different film thicknesses, t=0.05, 0.1, 0.2, and 0.3 um. We measured at low temperatures, T=0.02-5 K, one of the scattering-matrix element, S_21, which is the transmission coefficient from one port to the other. At the base temperatures, T=0.02-0.03 K, the resonators are overcoupled to the input/output microwave lines, and the loaded quality factors are on the order of 10^3. The resonant frequency has a considerably larger film-thickness dependence compared to the predictions by circuit simulators which calculate the inductance of CPW taking into account L_g only, where L_g is the usual magnetic inductance determined by the CPW geometry. By fitting a theoretical S_21 vs. frequency curve to the experimental data, we determined for each film thickness, the phase velocity of the CPW with an accuracy better than 0.1%. The large film-thickness dependence must be due to the kinetic inductance L_k of the CPW center conductor. We also measured S_21 as a function of temperature up to T=4-5 K, and confirmed that both thickness and temperature dependence are consistent with the theoretical prediction for L_k.

cond-mat.supr-con↗
arXiv2009

Power-dependent internal loss in Josephson bifurcation amplifiers

We have studied nonlinear superconducting resonators: lambda/2 coplanar-waveguide (CPW) resonators with Josephson junctions (JJs) placed in the middle and lambda/4 CPW resonators terminated by JJs, which can be used for the qubit readout as "bifurcation amplifiers." The nonlinearity of the resonators arises from the Josephson junctions, and because of the nonlinearity, the resonators with appropriate parameters are expected to show a hysteretic response to the frequency sweep, or "bifurcation," when they are driven with a sufficiently large power. We designed and fabricated resonators whose resonant frequencies were around 10 GHz. We characterized the resonators at low temperatures, T<0.05 K, and confirmed that they indeed exhibited hysteresis. The sizes of the hysteresis, however, are sometimes considerably smaller than the predictions based on the loaded quality factor in the weak drive regime. When the discrepancy appears, it is mostly explained by taking into account the internal loss, which often increases in our resonators with increasing drive power in the relevant power range. As a possible origin of the power-dependent loss, the quasiparticle channel of conductance of the JJs is discussed.

cond-mat.supr-con↗
arXiv2004

Single-electron transistors in electromagnetic environments

The current-voltage (I-V) characteristics of single-electron transistors (SETs) have been measured in various electromagnetic environments. Some SETs were biased with one-dimensional arrays of dc superconducting quantum interference devices (SQUIDs). The purpose was to provide the SETs with a magnetic-field-tunable environment in the superconducting state, and a high-impedance environment in the normal state. The comparison of SETs with SQUID arrays and those without arrays in the normal state confirmed that the effective charging energy of SETs in the normal state becomes larger in the high-impedance environment, as expected theoretically. In SETs with SQUID arrays in the superconducting state, as the zero-bias resistance of the SQUID arrays was increased to be much larger than the quantum resistance R_K = h/e^2 = 26 kohm, a sharp Coulomb blockade was induced, and the current modulation by the gate-induced charge was changed from e periodic to 2e periodic at a bias point 0<|V|<2D_0/e, where D_0 is the superconducting energy gap. The author discusses the Coulomb blockade and its dependence on the gate-induced charge in terms of the single Josephson junction with gate-tunable junction capacitance.

cond-mat.mes-hall↗
arXiv2004

Circuit with small-capacitance high-quality Nb Josephson junctions

We have developed a fabrication process for nanoscale tunnel junctions which includes focused-ion-beam etching from different directions. By applying the process to a Nb/(Al-)Al_2O_3/Nb trilayer, we have fabricated a Nb single-electron transistor (SET), and characterized the SET at low temperatures, T=0.04-40 K. The superconducting gap energy and the transition temperature of the Nb SET agree with the bulk values, which suggests high quality Nb junctions. The single-electron charging energy of the SET is estimated to be larger than 1 K.

cond-mat.mes-hall↗
arXiv2003

Quantum Effects in Small-Capacitance Single Josephson Junctions

We have measured the current-voltage (I-V) characteristics of small-capacitance single Josephson junctions at low temperatures (T=0.02-0.6 K), where the strength of the coupling between the single junction and the electromagnetic environment was controlled with one-dimensional arrays of dc SQUIDs. The single-junction I-V curve is sensitive to the impedance of the environment, which can be tuned IN SITU. We have observed Coulomb blockade of Cooper-pair tunneling and even a region of negative differential resistance, when the zero-bias resistance R_0' of the SQUID arrays is much higher than the quantum resistance R_K = h/e^2 = 26 kohm. The negative differential resistance is evidence of coherent single-Cooper-pair tunneling within the theory of current-biased single Josephson junctions. Based on the theory, we have calculated the I-V curves numerically in order to compare with the experimental ones at R_0' >> R_K. The numerical calculation agrees with the experiments qualitatively. We also discuss the R_0' dependence of the single-Josephson-junction I-V curve in terms of the superconductor-insulator transition driven by changing the coupling to the environment.

cond-mat.mes-hall↗
arXiv2003

Small-Capacitance Josephson Junctions: One-Dimensional Arrays and Single Junctions

We review experiments on small-capacitance Josephson junctions. When the Josephson junction is fabricated in the configuration of dc superconducting quantum interference device (SQUID), the Josephson coupling can be tuned IN SITU with an external magnetic field. The electrical transport properties of one-dimensional arrays of small-capacitance dc SQUIDs have been investigated in order to study the superconductor-insulator transition. The arrays have also been used to bias a single Josephson junction, and a clear Coulomb blockade of Cooper-pair tunneling has been observed in the single junction.

cond-mat.mes-hall↗
arXiv2002

Superconducting SET with tunable electromagnetic environment

We have studied the environmental effect on superconducting single-electron transistors (S-SETs) by biasing S-SETs with arrays of small-capacitance dc SQUIDs, whose effective impedance can be varied in situ. As the zero-bias resistance of the arrays is increased, Coulomb blockade in the S-SET becomes sharper, and the gate-voltage dependence changes from e-periodic to 2e-periodic. The SQUID arrays could be used as on-chip noise filters.

cond-mat.mes-hall↗
arXiv2001

Magetoresistance of RuO_2-based resistance thermometers below 0.3 K

We have determined the magnetoresistance of RuO_2-based resistors (Scientific Instruments RO-600) between 0.05 K and 0.3 K in magnetic fields up to 8 T. The magnetoresistance is negative around 0.5 T and then becomes positive at larger fields. The magnitude of the negative magnetoresistance increases rapidly as the temperature is lowered, while that of the positive magnetoresistance has smaller temperature dependence. We have also examined the temperature dependence of the resistance below 50 mK in zero magnetic field. It is described in the context of variable-range-hopping conduction down to 15 mK. Hence, the resistors can be used as thermometers down to at least 15 mK.

cond-mat.dis-nn↗
arXiv2001

Coulomb Blockade and Coherent Single-Cooper-Pair Tunneling in Single Josephson Junctions

We have measured the current-voltage characteristics of small-capacitance single Josephson junctions at low temperatures (T < 0.04 K), where the strength of the coupling between the single junction and the electromagnetic environment was controlled with one-dimensional arrays of dc SQUIDs. We have clearly observed Coulomb blockade of Cooper-pair tunneling and even a region of negative differential resistance, when the zero-bias resistance of the SQUID arrays is much higher than the quantum resistance h/e^2 = 26 kohm. The negative differential resistance is evidence of coherent single-Cooper-pair tunneling in the single Josephson junction.

cond-mat.mes-hall↗
arXiv2000

Metal-Insulator Transition in Homogeneously Doped Germanium

We have measured the electrical conductivity of Ge:Ga samples prepared by neutron-transmutation doping of isotopically enriched 70Ge single crystals in order to study the metal-insulator transition (MIT) ruling out an ambiguity due to inhomogeneous distribution of impurities. The critical exponent for the zero-temperature conductivity is 0.5 in zero magnetic field and 1.1 in magnetic fields. Variable-range-hopping conduction of the insulating samples and finite-temperature scaling analysis of the MIT induced by the external magnetic field are also discussed.

cond-mat.dis-nn↗
arXiv2000

Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge

We have determined the localization length ξand the impurity dielectric susceptibility χ_{\rm imp} as a function of Ga acceptor concentrations (N) in nominally uncompensated ^{70}Ge:Ga just below the critical concentration (N_c) for the metal-insulator transition. Both ξand χ_{\rm imp} diverge at N_c according to the functions ξ\propto(1-N/N_c)^{-ν} and χ_{\rm imp}\propto(N_c/N-1)^{-ζ}, respectively, with ν=1.2\pm0.3 and ζ=2.3\pm0.6 for 0.99N_c< N< N_c. Outside of this region (N<0.99N_c), the values of the exponents drop to ν=0.33\pm0.03 and ζ=0.62\pm0.05. The effect of the small amount of compensating dopants that are present in our nominally uncompensated samples, may be responsible for the change of the critical exponents at N\approx0.99N_c.

cond-mat.dis-nn↗
arXiv1999

Metal-insulator transition of isotopically enriched neutron-transmutation-doped ^{70}Ge:Ga in magnetic fields

We have investigated the temperature dependence of the electrical conductivity sigma(N,B,T) of nominally uncompensated, neutron-transmutation-doped ^{70}Ge:Ga samples in magnetic fields up to B=8 T at low temperatures (T=0.05-0.5 K). In our earlier studies at B=0, the critical exponent mu=0.5 defined by sigma(N,0,0) \propto (N-N_c)^{mu} has been determined for the same series of ^{70}Ge:Ga samples with the doping concentration N ranging from 1.861 \times 10^{17} cm^{-3} to 2.434 \times 10^{17} cm^{-3}. In magnetic fields, the motion of carriers loses time-reversal symmetry, the universality class may change and with it the value of mu. In this work, we show that magnetic fields indeed affect the value of mu (mu changes from 0.5 at B=0 to 1.1 at B \geq 4 T). The same exponent mu'=1.1 is also found in the magnetic-field-induced MIT for three different ^{70}Ge:Ga samples, i.e., sigma(N,B,0) \propto [B_c(N)-B]^{mu'} where B_c(N) is the concentration-dependent critical magnetic induction. We show that sigma(N,B,0) obeys a simple scaling rule on the (N,B) plane. Based on this finding, we derive from a simple mathematical argument that mu=mu' as has been observed in our experiment.

cond-mat.dis-nn↗
arXiv1998

Electrical properties of isotopically enriched neutron-transmutation-doped ^{70} Ge:Ga near the metal-insulator transition

We report the low temperature carrier transport properties of a series of nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples very close to the critical concentration N_c for the metal-insulator transition. The concentration of the sample closest to N_c is 1.0004N_c and it is unambiguously shown that the critical conductivity exponent is 0.5. Properties of insulating samples are discussed in the context of Efros and Shklovskii's variable range hopping conduction.

cond-mat.dis-nn↗