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Miguel J. Carballido

Publications and source records attributed to Miguel J. Carballido.

7 recordsLinked to original sources

In-situ control of hole-spin driving mechanisms

Hole-spin qubits enable fast, all-electrical spin manipulation through electric-dipole spin resonance (EDSR), arising from two microscopic mechanisms rooted in their intrinsically strong spin-orbit interaction. Depending on how the electric field acts on the quantum dot, the spin can be driven either by a modulation of its g-factor or by a displacement of the wavefunction. Here, we demonstrate in-situ control over the dominant EDSR driving mechanism of a hole-spin qubit in a silicon fin field-effect transistor by applying microwave signals to two different gate electrodes, thereby tuning the orientation of the local electric field. We measure the effective g-factor, its electrical tunability, and the Rabi frequency as functions of magnetic-field orientation. Their distinct angular dependencies, analyzed using a g-matrix formalism, allow us to identify the underlying driving processes and track their relative contributions for different drive configurations. By selecting the drive electrode, we can switch from a regime dominated by g-factor modulation to one with a strong contribution from wavefunction displacement. This in-situ tunability provides direct experimental access to both spin-driving mechanisms and offers a route toward optimized spin-qubit performance.

cond-mat.mes-hall↗

Compromise-Free Scaling of Qubit Speed and Coherence

Across leading qubit platforms, a common trade-off persists: increasing coherence comes at the cost of operational speed, reflecting the notion that protecting a qubit from its noisy surroundings also limits control over it. This speed-coherence dilemma limits qubit performance across various technologies. Here, we demonstrate a hole spin qubit in a Ge/Si core/shell nanowire that triples its Rabi frequency while simultaneously quadrupling its Hahn-echo coherence time, boosting the Q-factor by over an order of magnitude. This is enabled by the direct Rashba spin-orbit interaction, emerging from heavy-hole-light-hole mixing through strong confinement in two dimensions. Tuning a gate voltage causes this interaction to peak, providing maximum drive speed and a point where the qubit is optimally protected from charge noise, allowing speed and coherence to scale together. Our proof-of-concept shows that careful dot design can overcome a long-standing limitation, offering a new approach towards building high-performance, fault-tolerant qubits.

cond-mat.mes-hall↗

A direct dispersive signature of Pauli spin blockade

Pauli Spin Blockade (PSB) is a key paradigm in semiconductor nanostructures and gives access to the spin physics. We report the direct observation of PSB with gate-dispersive reflectometry on double quantum dots with source-drain bias. The reservoir charge transitions are strongly modulated, turning on and off when entering and leaving the blockaded region, consistent with a simple model. Seen with holes in Ge and Si, the effects are enhanced with larger bias voltage and suppressed by magnetic field. This work lays the foundation for fast probing of spin physics and minimally invasive spin readout.

cond-mat.mes-hall↗

Meta-learning characteristics and dynamics of quantum systems

While machine learning holds great promise for quantum technologies, most current methods focus on predicting or controlling a specific quantum system. Meta-learning approaches, however, can adapt to new systems for which little data is available, by leveraging knowledge obtained from previous data associated with similar systems. In this paper, we meta-learn dynamics and characteristics of closed and open two-level systems, as well as the Heisenberg model. Based on experimental data of a Loss-DiVincenzo spin-qubit hosted in a Ge/Si core/shell nanowire for different gate voltage configurations, we predict qubit characteristics i.e. $g$-factor and Rabi frequency using meta-learning. The algorithm we introduce improves upon previous state-of-the-art meta-learning methods for physics-based systems by introducing novel techniques such as adaptive learning rates and a global optimizer for improved robustness and increased computational efficiency. We benchmark our method against other meta-learning methods, a vanilla transformer, and a multilayer perceptron, and demonstrate improved performance.

quant-ph↗

Fully autonomous tuning of a spin qubit

Spanning over two decades, the study of qubits in semiconductors for quantum computing has yielded significant breakthroughs. However, the development of large-scale semiconductor quantum circuits is still limited by challenges in efficiently tuning and operating these circuits. Identifying optimal operating conditions for these qubits is complex, involving the exploration of vast parameter spaces. This presents a real 'needle in the haystack' problem, which, until now, has resisted complete automation due to device variability and fabrication imperfections. In this study, we present the first fully autonomous tuning of a semiconductor qubit, from a grounded device to Rabi oscillations, a clear indication of successful qubit operation. We demonstrate this automation, achieved without human intervention, in a Ge/Si core/shell nanowire device. Our approach integrates deep learning, Bayesian optimization, and computer vision techniques. We expect this automation algorithm to apply to a wide range of semiconductor qubit devices, allowing for statistical studies of qubit quality metrics. As a demonstration of the potential of full automation, we characterise how the Rabi frequency and g-factor depend on barrier gate voltages for one of the qubits found by the algorithm. Twenty years after the initial demonstrations of spin qubit operation, this significant advancement is poised to finally catalyze the operation of large, previously unexplored quantum circuits.

cond-mat.mes-hall↗

Cryogenic hyperabrupt strontium titanate varactors for sensitive reflectometry of quantum dots

Radio frequency reflectometry techniques enable high bandwidth readout of semiconductor quantum dots. Careful impedance matching of the resonant circuit is required to achieve high sensitivity, which however proves challenging at cryogenic temperatures. Gallium arsenide-based voltage-tunable capacitors, so-called varactor diodes, can be used for in-situ tuning of the circuit impedance but deteriorate and fail at temperatures below 10 K and in magnetic fields. Here, we investigate a varactor based on strontium titanate with hyperabrupt capacitance-voltage characteristic, that is, a capacitance tunability similar to the best gallium arsenide-based devices. The varactor design introduced here is compact, scalable and easy to wirebond with an accessible capacitance range from 45 pF to 3.2 pF. We tune a resonant inductor-capacitor circuit to perfect impedance matching and observe robust, temperature and field independent matching down to 11 mK and up to 2 T in-plane field. Finally, we perform gate-dispersive charge sensing on a germanium/silicon core/shell nanowire hole double quantum dot, paving the way towards gate-based single-shot spin readout. Our results bring small, magnetic field-resilient, highly tunable varactors to mK temperatures, expanding the toolbox of cryo-radio frequency applications.

cond-mat.mes-hall↗

Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

We study theoretically the spin-orbit interaction of low-energy electrons in semiconducting nanowires with a zinc-blende lattice. The effective Dresselhaus term is derived for various growth directions, including <11(-2)>-oriented nanowires. While a specific configuration exists where the Dresselhaus spin-orbit coupling is suppressed even at confinement potentials of low symmetry, many configurations allow for a strong Dresselhaus coupling. In particular, we discuss qualitative and quantitative results for nanowire cross-sections modeled after sectors of rings or circles. The parameter dependence is analyzed in detail, enabling predictions for a large variety of setups. For example, we gain insight into the spin-orbit coupling in recently fabricated GaAs-InAs nanomembrane-nanowire structures. By combining the effective Dresselhaus and Rashba terms, we find that such structures are promising platforms for applications where an electrically controllable spin-orbit interaction is needed. If the nanowire cross-section is scaled down and InAs replaced by InSb, remarkably high Dresselhaus-based spin-orbit energies of the order of millielectronvolt are expected. A Rashba term that is similar to the effective Dresselhaus term can be induced via electric gates, providing means to switch the spin-orbit interaction on and off. By varying the central angle of the circular sector, we find, among other things, that particularly strong Dresselhaus couplings are possible when nanowire cross-sections resemble half-disks.

cond-mat.mes-hall↗