arXiv subjects

Mihir Chaudhari

Publications and source records attributed to Mihir Chaudhari.

5 recordsLinked to original sources

arXiv2026

80 Channel Photon Pair Source from a Thin-Film Lithium Niobate Racetrack Microresonator

Nanophotonic platforms have multiple properties and features desirable for producing correlated photon pairs. In these platforms, spontaneous parametric down-conversion (SPDC) and spontaneous four-wave-mixing (SFWM) have been used to achieve photon pair production. By placing the nonlinear region in a resonant cavity, the source obtains an enhanced nonlinear interaction and naturally filters out photons by frequency according to the cavity linewidth. Among various platforms, X-cut thin-film lithium niobate (TFLN) stands out for its strong second-order optical nonlinearity ($\chi^{(2)}$) and access to a strong platform for modulating light. Although previously demonstrated, present sources are limited in their photon pair channel availability, limiting the potential of quantum applications in quantum information processing, communication, and sensing that can scale in robustness by having access to multiple photon pair channels. To this end, we demonstrate a photon pair source on X-cut TFLN with 80 measured photon pair channels spanning the C and L optical bands with a frequency spacing of 49.5 GHz between photons. We characterize the second-order correlation function and pair generation rate (PGR) of 80 channels, the highest number of channels demonstrated to date, and achieve a pair generation of 125.7 kHz / {\mu}W after accounting for the cavity's escape efficiency. We also demonstrate heralded single photon operation by calculating a heralded auto-correlation dip of 0.0544 $\pm$ 0.0054 with 2.2 mW of on-chip pump power. These findings demonstrate the promise of X-cut TFLN as a strong platform for quantum optical applications.

physics.optics↗

arXiv2026

18-dB on-chip vacuum squeezing in an adaptively poled lithium niobate waveguide

Quantum squeezed states of light can enhance measurement sensitivity beyond classical limits and enable quantum information processing, but scalable low-loss sources remain challenging. We demonstrate continuous-wave quantum squeezing on a chip, achieving 18 dB of squeezing and 20 dB of anti-squeezing at 1570 nm in a 1.6-cm traveling-wave adaptively poled thin-film lithium niobate waveguide. A distributed model independently determines facet losses, phase noise, and nonlinear interaction strength without prior assumptions, enabling rigorous inference of on-chip performance. We estimate a 95% confidence interval of [-18.96, -17.25] dB squeezing and [19.96, 21.35] dB anti-squeezing. These values represent the highest squeezing reported for any integrated photonic platform and the first assumption-free statistical validation of integrated squeezing performance. Our results establish thin-film lithium niobate as a high-performance, scalable platform for continuous-variable quantum sensing, communications, and photonic computing.

physics.optics↗

arXiv2025

Residual Stress Anisotropy In Thin-Film Lithium Niobate For Stress-Managed MEMS

In this work, we present the first experimental study of residual stress and post-release beam deflection in 128-degree Y-cut thin-film lithium niobate (TFLN) on Si, revealing pronounced stress anisotropy with in-plane orientation. Using optical profilometry with curvature fitting, we extract the stress gradient (sigma1) and generate orientation-resolved stress maps across multiple film thicknesses (100 nm, 220 nm, and 460 nm). For films in the 220 to 460 nm range, we identify stress-free in-plane orientations near approximately 55 degrees and 125 degrees, enabling extremely flat suspended beams. In contrast, ultra-thin 100 nm films exhibit shifted stress-free orientations near approximately 20 degrees and 160 degrees. Leveraging these orientations, we demonstrate very long suspended beams up to 2 cm in length, 10 micrometers in width, and 460 nm in thickness without collapse. These results establish in-plane stress anisotropy and thickness selection in TFLN as practical design levers for mechanically stable, scalable, and stress-managed microelectromechanical systems (MEMS).

physics.app-ph↗

arXiv2025

Thermal Endurance of Suspended Thin-Film Lithium Niobate up to 800 {\deg}C

The need for high-temperature piezoelectric microelectromechanical systems (MEMS) requires pushing piezoelectric platforms to their thermal limits. In harsh thermal environments, piezoelectric MEMS devices are expected to sustain severe damage because of material degradation and coefficient of thermal expansion (CTE) mismatches between the functional layers and the carrier wafer. This paper investigates the thermal endurance of the suspended thin-film lithium niobate (LN) platform by observing the structural integrity and performance of acoustic Lamb wave resonators after annealing rounds at increasing temperatures, with a focus on temperatures between 550 $^\circ$C and 800 $^\circ$C, with 50 $^\circ$C temperature increments. Fundamental symmetric (S0) mode acoustic resonators are fabricated on 600 nm stoichiometric LN (sLN) with 40 nm thick platinum top electrodes and a thin titanium adhesion layer. After each annealing round, changes in the devices' resonant frequency and quality factor (\emph{Q}) are quantitatively studied. The devices and material stack are further analyzed with resistivity structures, optical microscope images, and X-ray diffraction (XRD) measurements. The results provide valuable insights into the design and material selection necessary to optimize the suspended thin-film LN platform for high temperatures. Understanding the thermal limit of the platform enables its use for sensors, actuators, resonators, and potentially other thin-film LN microsystems, e.g, photonics, electro-optical, and acousto-optical systems in harsh thermal environments.

physics.app-ph↗

arXiv2025

Thermal Resilience of Suspended Thin-Film Lithium Niobate Acoustic Resonators up to 550 {\deg}C

This paper reports a suspended thin-film lithium niobate (LN) piezoelectric resonator platform surviving high annealing temperatures of 550 {\deg}C, among the highest temperature at which the thermal resilience of suspended LN resonators is studied. Acoustic resonators are built on 600 nm thick transferred stoichiometric LN on silicon wafers with 40 nm thick platinum (Pt) electrodes, selected for high temperature operation. The fabricated resonators are first annealed at 250 {\deg}C, and the anneal temperature is incrementally increased to 550 {\deg}C after 7 rounds of annealing. The annealing is shown to upshift resonant frequencies and can increase the quality factor (Q), within a temperature range, before it gradually damages the device performance. This work presents promising results for using the suspended thin-film LN platform for resonators, sensors, and transducers in harsh thermal environments.

physics.app-ph↗