arXiv subjects

Mikhail Tatmyshevskiy

Publications and source records attributed to Mikhail Tatmyshevskiy.

4 recordsLinked to original sources

arXiv2025

Giant exciton binding energy in bulk CrCl3

Van der Waals (vdW) materials, with their unique combination of electronic, optical, and magnetic properties, are emerging as promising platforms for exploring excitonic phenomena. Thus far, the choice of materials with exceptional excitonic response has been limited to two-dimensional (2D) configurations of vdW materials. At the same time, large interlayer distance and the possibility to create a variety of heterostructures offers an opportunity to control the dielectric screening in van der Waals heterostructures and van der Waals 3D materials, thus engineering the excitonic properties. Here, we reveal that bulk vdW crystal CrCl3 answers this quest with a record exciton binding energy of 1.64 eV owing to a delicate interplay of quasi-2D electronic confinement and local magnetic correlations. We also suggest that the non-local magnetic correlations play an important role in the temperature dependence of photoluminescence intensity. Furthermore, we observe colossal binding energies in vdW crystals NbOCl2 (0.66 eV) and MoCl3 (0.35 eV) and formulate a universal exciton binding energy dependence on bandgap for 2D and 3D vdW materials. Hence, our findings establish a fundamental link between the layered structure of vdW materials and their excitonic properties.

cond-mat.mtrl-sci↗

arXiv2025

Scalable van der Waals Photonics: High-Refractive-Index Gallium Sulfide Films with Single-Crystal Optical Properties

The integration of high-refractive-index dielectrics into scalable photonic architectures is foundational to advancing integrated circuits and augmented reality (AR) displays. Van der Waals (vdW) materials offer exceptional optical properties, including high refractive indices and giant anisotropy, but their implementation is constrained by the small area and uncontrolled thickness of mechanically exfoliated flakes. Here, we demonstrate that atomic layer deposition (ALD) grown gallium sulfide (GaS) overcomes the trade-off between high optical performance and manufacturability, emerging as a large-scale vdW dielectric platform. Through rigorous optical and structural benchmarking against pristine single crystals, we establish that the optical constants (n, k) of ALD-GaS are virtually indistinguishable from single-crystal counterparts. By leveraging the retained out-of-plane anisotropy, we demonstrate that ALD-GaS enables superior suppression of crosstalk in densely integrated waveguides compared to conventional scalable high-index platforms. Our findings establish ALD-GaS as a technologically viable pathway for implementing anisotropic vdW materials in visible-spectrum photonics.

physics.optics↗

arXiv2024

Anisotropic van der Waals Crystal with High Refractive Index and Transparency for UV-Visible Range Applications

Thanks to their record high refractive index and giant optical anisotropy, van der Waals (vdW) materials have accelerated the development of nanophotonics. However, traditional high refractive index materials, such as titanium dioxide (TiO2), still dominate in the most important visible range. This is due to the current lack of transparent vdW materials across the entire visible spectrum. In this context, we propose that germanium disulfide (GeS2) could offer a significant breakthrough. With its high refractive index, negligible losses, and biaxial optical anisotropy across the whole visible range, GeS2 has the potential to complement TiO2 and close the application gap of vdW materials in the visible spectrum. The addition of GeS2 could have a profound impact on the design of van der Waals nanophotonic circuits for any operation wavelength from ultraviolet to infrared, emphasizing the significance of the potential impact of GeS2 on the field of nanophotonics.

physics.optics↗

arXiv2022

Anomalous optical response of graphene on hexagonal boron nitride substrates

Graphene/hBN heterostructures can be considered as one of the basic building blocks for the next-generation optoelectronics mostly owing to the record-high electron mobilities. However, currently, the studies of the intrinsic optical properties of graphene are limited to the standard substrates (SiO2/Si, glass, quartz) despite the growing interest in graphene/hBN heterostructures. This can be attributed to a challenging task of the determination of hBN's strongly anisotropic dielectric tensor in the total optical response. In this study, we overcome this issue through imaging spectroscopic ellipsometry utilizing simultaneous analysis of hBN's optical response with and without graphene monolayers. Our technique allowed us to retrieve the optical constants of graphene from graphene/hBN heterostructures in a broad spectral range of 250-950 nm. Our results suggest that graphene's absorption on hBN may exceed the one of graphene on SiO2/Si by about 60 %.

cond-mat.mes-hall↗