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Min Hyuk Park

Publications and source records attributed to Min Hyuk Park.

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Neuronal arithmetic operators based on Ovonic threshold switches (OTS) for biologically inspired analog computing

Biological neurons perform arithmetic computations - including additive integration and divisive gain modulation - through synaptic conductance changes and shunting inhibition, enabling context-dependent information processing that far exceeds simple threshold-and-fire models. Replicating these capabilities in compact hardware remains a fundamental challenge for neuromorphic engineering. Here, we demonstrate artificial neuron circuits based on Ovonic threshold switches (OTS) that physically implement three arithmetic operations: SUM, PARALLEL, and DIVISION. The SUM and PARALLEL neurons exploit MOSFET-controlled dendritic conductances, producing output firing rates that collapse onto invariant curves as a function of combined inputs - satisfying the canonical criteria for neuronal addition. The DIVISION neuron leverages a JFET-based shunting pathway, inspired by GABA_A-mediated inhibition in the cortex, to achieve divisive gain modulation well described by a Hill-type function (R2 ~ 0.95, Hill exponent n ~ 1.3), consistent with nonlinear normalization observed in visual and olfactory circuits. Applying the DIVISION neuron to pixel-wise image normalization under non-uniform illumination recovers obscured visual content, mirroring contrast normalization in the visual cortex. Compared to CMOS-based division implementations, the proposed approach offers improvements in energy efficiency and scalability exceeding an order of magnitude, establishing a viable path toward compact, brain-inspired analog computing.

physics.app-ph

Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia

Here, we optimized the annealing temperature of HZO/TiN thin film heterostructure via multiscale analysis of remnant polarization, crystallographic phase, minimum ferroelectric domain size, and average grain size. We found that the remnant polarization was closely related to the relative amount of the orthorhombic phase whereas the minimum domain size was to the relative amount of the monoclinic phase. The minimum domain size was obtained at the annealing temperature of 500$^\cird$C while the optimum remnant polarization and capacitance at the annealing temperature of 600$^\circ$C. We conclude that the minimum domain size is more important than the sheer magnitude of remnant polarization considering the retention and fatigue of switchable polarization in nanoscale ferroelectric devices. Our results are expected to contribute to the development of ultra-low-power logic transistors and next-generation non-volatile memory devices.

physics.app-ph