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Min Zeng

Publications and source records attributed to Min Zeng.

51 records · Page 3Linked to original sources

Clozer: Adaptable Data Augmentation for Cloze-style Reading Comprehension

Task-adaptive pre-training (TAPT) alleviates the lack of labelled data and provides performance lift by adapting unlabelled data to downstream task. Unfortunately, existing adaptations mainly involve deterministic rules that cannot generalize well. Here, we propose Clozer, a sequence-tagging based cloze answer extraction method used in TAPT that is extendable for adaptation on any cloze-style machine reading comprehension (MRC) downstream tasks. We experiment on multiple-choice cloze-style MRC tasks, and show that Clozer performs significantly better compared to the oracle and state-of-the-art in escalating TAPT effectiveness in lifting model performance, and prove that Clozer is able to recognize the gold answers independently of any heuristics.

cs.CL↗

Direct evidence for intermediate multiferroic phase in LiCuFe2(VO4)3

Magnetic susceptibility, specific heat, dielectric, and electric polarization of LiCuFe2(VO4)3 have been investigated. Two sequential antiferromagnetic transitions at TN1 ~ 9.95 K and TN2 ~ 8.17 K are observed under zero magnetic field. While a dielectric peak at TN1 is clearly identified, the measured pyroelectric current also exhibits a sharp peak at TN1, implying the magnetically relevant ferroelectricity. Interestingly, another pyroelectric peak around TN2 with opposite signal is observed, resulting in the disappearance of electric polarization below TN2. Besides, the electric polarization is significantly suppressed in response to external magnetic field, evidencing remarkable magnetoelectric effect. These results suggest the essential relevance of the magnetic structure with the ferroelectricity in LiCuFe2(VO4)3, deserving for further investigation of the underlying mechanism.

cond-mat.mtrl-sci↗

Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current

The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics is emerging consequently. Here we demonstrate the highly stable and fatigue-resistant nonvolatile ferroelectric memory device based on deterministic creation and erasure of conductive domain wall geometrically confined inside a topological domain structure. By introducing a pair of delicately designed co-axial electrodes onto the epitaxial BiFeO3 film, one can easily create quadrant center topological polar domain structure. More importantly, a reversible switching of such center topological domain structure between the convergent state with highly conductive confined wall and the divergent state with insulating confined wall can be realized, hence resulting in an apparent resistance change with a large On/Off ratio > 104 and a technically preferred readout current (up to 40 nA). Owing to the topological robustness of the center domain structure, the device exhibits the excellent restoration repeatability over 106 cycles and a long retention over 12 days (> 106 s). This work demonstrates a good example for implementing the exotic polar topologies in high-performance nanoscale devices, and would spur more interest in exploring the rich emerging applications of these exotic topological states.

physics.app-ph↗

A Pseudo Label-wise Attention Network for Automatic ICD Coding

Automatic International Classification of Diseases (ICD) coding is defined as a kind of text multi-label classification problem, which is difficult because the number of labels is very large and the distribution of labels is unbalanced. The label-wise attention mechanism is widely used in automatic ICD coding because it can assign weights to every word in full Electronic Medical Records (EMR) for different ICD codes. However, the label-wise attention mechanism is computational redundant and costly. In this paper, we propose a pseudo label-wise attention mechanism to tackle the problem. Instead of computing different attention modes for different ICD codes, the pseudo label-wise attention mechanism automatically merges similar ICD codes and computes only one attention mode for the similar ICD codes, which greatly compresses the number of attention modes and improves the predicted accuracy. In addition, we apply a more convenient and effective way to obtain the ICD vectors, and thus our model can predict new ICD codes by calculating the similarities between EMR vectors and ICD vectors. Extensive experiments show the superior performance of our model. On the public MIMIC-III dataset and private Xiangya dataset, our model achieves micro f1 of 0.583 and 0.806, respectively, which outperforms other competing models. Furthermore, we verify the ability of our model in predicting new ICD codes. The case study shows how pseudo label-wise attention works, and demonstrates the effectiveness of pseudo label-wise attention mechanism.

cs.CL↗

BridgeDPI: A Novel Graph Neural Network for Predicting Drug-Protein Interactions

Motivation: Exploring drug-protein interactions (DPIs) work as a pivotal step in drug discovery. The fast expansion of available biological data enables computational methods effectively assist in experimental methods. Among them, deep learning methods extract features only from basic characteristics, such as protein sequences, molecule structures. Others achieve significant improvement by learning from not only sequences/molecules but the protein-protein and drug-drug associations (PPAs and DDAs). The PPAs and DDAs are generally obtained by using computational methods. However, existing computational methods have some limitations, resulting in low-quality PPAs and DDAs that hamper the prediction performance. Therefore, we hope to develop a novel supervised learning method to learn the PPAs and DDAs effectively and thereby improve the prediction performance of the specific task of DPI. Results: In this research, we propose a novel deep learning framework, namely BridgeDPI. BridgeDPI introduces a class of nodes named hyper-nodes, which bridge different proteins/drugs to work as PPAs and DDAs. The hyper-nodes can be supervised learned for the specific task of DPI since the whole process is an end-to-end learning. Consequently, such a model would improve prediction performance of DPI. In three real-world datasets, we further demonstrate that BridgeDPI outperforms state-of-the-art methods. Moreover, ablation studies verify the effectiveness of the hyper-nodes. Last, in an independent verification, BridgeDPI explores the candidate bindings among COVID-19's proteins and various antiviral drugs. And the predictive results accord with the statement of the World Health Organization and Food and Drug Administration, showing the validity and reliability of BridgeDPI.

cs.LG↗

Electric-field-driven Non-volatile Multi-state Switching of Individual Skyrmions in a Multiferroic Heterostructure

Electrical manipulation of skyrmions attracts considerable attention for its rich physics and promising applications. To date, such a manipulation is realized mainly via spin-polarized current based on spin-transfer torque or spin-orbital torque effect. However, this scheme is energy-consuming and may produce massive Joule heating. To reduce energy dissipation and risk of heightened temperatures of skyrmion-based devices, an effective solution is to use electric field instead of current as stimulus. Here, we realize an electric-field manipulation of skyrmions in a nanostructured ferromagnetic/ferroelectrical heterostructure at room temperature via an inverse magneto-mechanical effect. Intriguingly, such a manipulation is non-volatile and exhibits a multi-state feature. Numerical simulations indicate that the electric-field manipulation of skyrmions originates from strain-mediated modification of effective magnetic anisotropy and Dzyaloshinskii-Moriya interaction. Our results open a direction for constructing low-energy-dissipation, non-volatile, and multi-state skyrmion-based spintronic devices.

cond-mat.mtrl-sci↗

Enhanced Stability of Antiferromagnetic Skyrmion during Its Motion by Anisotropic Dzyaloshinskii Moriya Interaction

Searching for new methods to enhance the stability of antiferromagnetic (AFM) skyrmion during its motion is an important issue for AFM spintronic devices. Herein, the spin polarized current-induced dynamics of a distorted AFM skyrmion is numerically studied, based on the Landau Lifshitz Gilbert simulations of the model with an anisotropic Dzyaloshinskii Moriya (DM) interaction. It is demonstrated that the DM interaction anisotropy induces the skyrmion deformation, which suppresses the distortion during the motion and enhances the stability of the skyrmion. Moreover, the effect of the DM interaction anisotropy on the skyrmion velocity is investigated in detail, and the simulated results are further explained by Thiele theory. This work unveils a promising strategy to enhance the stability and the maximum velocity of AFM skyrmion, benefiting future spintronic applications.

physics.app-ph↗

Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects

Ferroelectric topological objects (e.g. vortices, skyrmions) provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future configurable nanoelectronic devices. Here, we demonstrate quasi-one-dimensional metallic high conduction channels along two types of exotic topological defects, i.e. the topological cores of (i) a quadrant vortex domain structure and (ii) a center domain (monopole-like) structure confined in high quality BiFeO3 nanoisland array, abbreviated as the vortex core and the center core. We unveil via phase-field simulations that the superfine (< 3 nm) metallic conduction channels along center cores arise from the screening charge carriers confined at the core whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be repeatedly and reversibly created and deleted by manipulating the two topological states via an electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices such as ultrahigh density nonvolatile memory.

cond-mat.mtrl-sci↗

Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide new insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons.

cond-mat.mtrl-sci↗

Controllable Defect Driven Symmetry Change and Domain Structure Evolution in BiFeO3 with Enhanced Tetragonality

Defect engineering has been a powerful tool to enable the creation of exotic phases and the discovery of intriguing phenomena in ferroelectric oxides. However, accurate control the concentration of defects remains a big challenge. In this work, ion implantation, that can provide controllable point defects, allows us the ability to produce a controlled defect-driven true super-tetragonal (T) phase with enhanced tetragonality in ferroelectric BiFeO3 thin films. This point defect engineering is found to drive the phase transition from the as-grown mixed rhombohedral-like (R) and tetragonal-like (MC) phase to true tetragonal (T) symmetry. By further increasing the injected dose of He ion, we demonstrate an enhanced tetragonality super-tetragonal (super-T) phase with the largest c/a ratio (~ 1.3) that has ever been experimentally achieved in BiFeO3. A combination of morphology change and domain evolution further confirm that the mixed R/MC phase structure transforms to the single-domain-state true tetragonal phase. Moreover, the re-emergence of R phase and in-plane stripe nanodomains after heat treatment reveal the memory effect and reversible phase transition. Our findings demonstrate the control of R-Mc-T-super T symmetry changes and the creation of true T phase BiFeO3 with enhanced tetragonality through controllable defect engineering. This work also provides a pathway to generate large tetragonality (or c/a ratio) that could be extended to other ferroelectric material systems (such as PbTiO3, BaTiO3 and HfO2) which may lead to strong polarization enhancement.

cond-mat.mtrl-sci↗

Temperature-gradient-induced electrokinetic flow and thermoelectricity of electrolyte solutions in a capillaries

A systematic theoretical study of temperature-gradient-induced electrokinetic flow and thermoelectric potential of electrolyte solutions in a micro-/nanocapillary is presented. The study is based on a semi-analytical model developed by simultaneously solving the energy equation and the Poisson-Nernst-Planck/Navier-Stokes equations with the lubrication theory. The semi-analytical model is shown to be mainly governed by eight parameters, including two temperature-related parameters (temperature and its gradient), two electrokinetic parameters ($ζ$ potential and the ratio of capillary radius to the Debye length $κ_0a$) and four physical properties of cation and anion (i.e. Soret coefficient difference $ΔS_T$, average Soret coefficient $S_T$, normalized difference in diffusivities $χ$ and intrinsic Peclet number $λ$). It is found that the thermoelectric field is induced by three effects, which are respectively due to (1) the difference in the Soret coefficients of cation and anion; (2) the selective ion diffusion resulting from the temperature-modified Boltzmann distribution of ions; (3) the advective transport of ions caused by the fluid flow. The first thermoelectric effect prevails for lower $ζ$ potentials or large $κ_0a$, while the second is dominant for higher $ζ$ potentials with very small $κ_0a$. The first two thermoelectric effects can cooperate or counteract depending on the sign of $ζΔS_T$. Finally, the temperature-gradient-induced electrokinetic flow is found to be a superposition of an electroosmotic flow component due to the thermoelectric field and a thermoosmotic flow component due to the combined effects of osmotic pressure and dielectric body force. These two flow components may cooperate or counteract depending on values of $ζ$ and $κ_0a$.

physics.flu-dyn↗

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is imperative to explore the conductive domain walls in small confined systems while earlier investigations have hitherto focused on thin films or bulk single crystals, noting that the size-confined effects will certainly modulate seriously the domain structure and wall transport. Here, we demonstrate an observation and manipulation of conductive domain walls confined within small BiFeO3 nano-islands aligned in high density arrays. Using conductive atomic force microscopy (CAFM), we are able to distinctly visualize various types of conductive domain walls, including the head-to-head charged walls (CDWs), zigzag walls (zigzag-DWs), and typical 71° head-to-tail neutral walls (NDWs). The CDWs exhibit remarkably enhanced metallic conductivity with current of ~ nA order in magnitude and 104 times larger than that inside domains (0.01 ~ 0.1 pA), while the semiconducting NDWs allow also much smaller current ~ 10 pA than the CDWs. The substantially difference in conductivity for dissimilar walls enables additional manipulations of various wall conduction states for individual addressable nano-islands via electrically tuning of their domain structures. A controllable writing of four distinctive states by applying various scanning bias voltages is achieved, offering opportunities for developing multilevel high density memories.

cond-mat.mes-hall↗

Tunable disorder and localization in the rare-earth nickelates

The rare-earth nickelates are a rich playground for transport properties, known to host non-Fermi liquid character, resistance saturation and metal-insulator transitions. We report a study of transport in LaNiO3 in the presence of tunable disorder induced by irradiation. While pristine LaNiO3 samples are metallic, highly irradiated samples show insulating behaviour at all temperatures. Using irradiation fluence as a tuning handle, we uncover an intermediate region hosting a metal-insulator transition. This transition falls within the Mott-Ioffe-Regel regime wherein the mean free path is comparable to lattice spacing. In the high temperature metallic regime, we find a transition from non-Fermi liquid to a Fermi-liquid-like character. On the insulating side of the metal-insulator transition, we find behaviour that is consistent with weak localization. This is reflected in magnetoresistance that scales with the square of the field and in resistivity. In the highly irradiated insulating samples, we find good agreement with variable range hopping, consistent with Anderson localization. We find qualitatively similar behaviour in thick PrNiO3 films as well. Our results demonstrate that ion irradiation can be used to tailor transport, serving as an excellent tool to study the physics of localization.

cond-mat.mtrl-sci↗

High density array of epitaxial BiFeO3 nanodots with robust and reversibly switchable topological domain states

The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for such applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high density arrays of epitaxial BiFeO3 (BFO) nanodots with lateral size as small as ~60 nm. We demonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time yet can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These result demonstrated that these reversibly switchable topological domain arrays are promising for applications in high density nanoferroelectric devices such as nonvolatile memories

cond-mat.mtrl-sci↗

Dirac Fermions induced in strained zigzag phosphorus nanotubes and the applications in field effect transistors

In this work, Dirac fermions have been obtained and engineered in one-dimensional (1D) zigzag phosphorus nanotubes (ZPNTs). We have performed a comprehensive first-principle computational study of the electronic properties of ZPNTs with various diameters. The results indicate that as the lattice parameter (Lc) along axial direction increases, ZPNTs undergo transitions from metal to semimetal and semimetal to semiconductor, whereas Dirac fermions appear at Lc ranging from 3.90Å to 4.10Å. In particular, a field effect transistor (FET) based on a 12-ZPNT (with 12 unit cells in transverse direction) exhibits semiconductor behaviors with efficient gate-effect modulation at Lc= 4.60Å. However, only weak gate modulation is demonstrated when the nanotube becomes semimetal at Lc= 4.10Å. This study indicates that ZPNTs are profoundly appealing in applications in the strain sensors. Our findings pave the way for development of high-performance strain-engineered electronics based on Dirac Fermions in 1D materials.

cond-mat.mes-hall↗