arXiv subjects

Mina Ren

Publications and source records attributed to Mina Ren.

2 recordsLinked to original sources

arXiv2026

Anomalous Non-Hermitian Topological Anderson Insulator

Strong disorder drives conventional Hermitian systems into Anderson insulating states, suppressing all topological phases. Here, we unveil symmetry-protected, anomalous topological phases in the strong disorder limit of a non-Hermitian system, characterized by a scale-invariant merging of zero-energy modes. Using the maximally symmetric Jx lattice as an ideal platform and introducing specifically engineered (ABBA-type) symmetry-preserving non-Hermitian disorder, we observe a sequence of disorder-induced phase transitions: from a trivial insulator into and through a non-Hermitian topological Anderson insulator (TAI) phase, culminating in a stable anomalous non-Hermitian TAI phase characterized by a quantized polarization P_x \approx 0.25. Within this anomalous phase protected by the mobility gap, the zero-energy modes exhibit a distinct (N/2)-mode coalescence that scales with system size. Our findings demonstrate that non-Hermitian disorder engineered to preserve symmetry can induce and protect novel topological order inaccessible to conventional Hermitian disorder, thereby advancing the fundamental understanding of topological phenomena mediated by the interplay of disorder and non-Hermiticity.

cond-mat.mes-hall↗

arXiv2026

Realization of staircase topological Anderson phase transitions

One-dimensional topological Anderson insulators provide a paradigm for disorder-induced topological phases in which the underlying system turns from a trivial to a topological phase. It is widely recognized that the latter vanishes at large disorder amplitude. Here, and contrary to the general belief, we provide evidence for a successive disorder-driven topological transitions in a single-wall nanotube, culminating in a topological Anderson phase that remains unexpectedly robust at strong disorder. This phenomenon is confirmed by analysis of the corresponding topological invariant, which increases stepwise as disorder increases, giving evidence for the emergence of edge states. We experimentally implement these topological Anderson staircase phase transitions in a one-dimensional topolectrical circuit, where the persistence of edge states is revealed by node-voltage measurements. The robustness of the edge states is corroborated by numerical calculations of their localization properties. Our work opens the road to topological disordertronics, where topological phases can be tuned by disorder.

cond-mat.mes-hall↗