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Minbok Wi

Publications and source records attributed to Minbok Wi.

5 recordsLinked to original sources

PVAC: A RowHammer Mitigation Architecture Exploiting Per-victim-row Counting

As DRAM scaling exacerbates RowHammer, DDR5 introduces per-row activation counting (PRAC) to track aggressor activity. However, PRAC indiscriminately increments counters on every activation -- including benign refreshes -- while relying solely on explicit RFM operations for resets. Consequently, counters saturate even in an idle bank, triggering cascading mitigations and degrading performance. This vulnerability arises from a fundamental mismatch: PRAC tracks the aggressor but aims to protect the victim. We present Per-Victim-row hAmmered Counting (PVAC), a victim-based counting mechanism that aligns the counter semantics with the physical disturbance mechanism of RowHammer. PVAC increments the counters of victim rows, resets the activated row, and naturally bounds counter values under normal refresh. To enable efficient victim-based updates, PVAC employs a dedicated counter subarray (CSA) that performs all counter resets and increments concurrently with normal accesses, without timing overhead. We further devise an energy-efficient CSA layout that minimizes refresh-induced counter accesses. Through victim-based counting, PVAC supports higher hammering tolerance than PRAC while maintaining the same worst-case safety guarantee. Across benign workloads and adversarial attack patterns, PVAC avoids spurious Alerts, eliminates PRAC timing penalties, and achieves higher performance and lower energy consumption than prior PRAC-based defenses.

cs.CR

Per-Row Activation Counting on Real Hardware: Demystifying Performance Overheads

Per-Row Activation Counting (PRAC), a DRAM read disturbance mitigation method, modifies key DRAM timing parameters, reportedly causing significant performance overheads in simulator-based studies. However, given known discrepancies between simulators and real hardware, real-machine experiments are vital for accurate PRAC performance estimation. We present the first real-machine performance analysis of PRAC. After verifying timing modifications on the latest CPUs using microbenchmarks, our analysis shows that PRAC's average and maximum overheads are just 1.06% and 3.28% for the SPEC CPU2017 workloads -- up to 9.15x lower than simulator-based reports. Further, we show that the close page policy minimizes this overhead by effectively hiding the elongated DRAM row precharge operations due to PRAC from the critical path.

cs.AR

Sudoku: Decomposing DRAM Address Mapping into Component Functions

Decomposing DRAM address mappings into component-level functions is critical for understanding memory behavior and enabling precise RowHammer attacks, yet existing reverse-engineering methods fall short. We introduce novel timing-based techniques leveraging DRAM refresh intervals and consecutive access latencies to infer component-specific functions. Based on this, we present Sudoku, the first software-based tool to automatically decompose full DRAM address mappings into channel, rank, bank group, and bank functions while identifying row and column bits. We validate Sudoku's effectiveness, successfully decomposing mappings on recent Intel and AMD processors.

cs.CR

DRAMScope: Uncovering DRAM Microarchitecture and Characteristics by Issuing Memory Commands

The demand for precise information on DRAM microarchitectures and error characteristics has surged, driven by the need to explore processing in memory, enhance reliability, and mitigate security vulnerability. Nonetheless, DRAM manufacturers have disclosed only a limited amount of information, making it difficult to find specific information on their DRAM microarchitectures. This paper addresses this gap by presenting more rigorous findings on the microarchitectures of commodity DRAM chips and their impacts on the characteristics of activate-induced bitflips (AIBs), such as RowHammer and RowPress. The previous studies have also attempted to understand the DRAM microarchitectures and associated behaviors, but we have found some of their results to be misled by inaccurate address mapping and internal data swizzling, or lack of a deeper understanding of the modern DRAM cell structure. For accurate and efficient reverse-engineering, we use three tools: AIBs, retention time test, and RowCopy, which can be cross-validated. With these three tools, we first take a macroscopic view of modern DRAM chips to uncover the size, structure, and operation of their subarrays, memory array tiles (MATs), and rows. Then, we analyze AIB characteristics based on the microscopic view of the DRAM microarchitecture, such as 6F^2 cell layout, through which we rectify misunderstandings regarding AIBs and discover a new data pattern that accelerates AIBs. Lastly, based on our findings at both macroscopic and microscopic levels, we identify previously unknown AIB vulnerabilities and propose a simple yet effective protection solution.

cs.CR

X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands

The demand for accurate information about the internal structure and characteristics of dynamic random-access memory (DRAM) has been on the rise. Recent studies have explored the structure and characteristics of DRAM to improve processing in memory, enhance reliability, and mitigate a vulnerability known as rowhammer. However, DRAM manufacturers only disclose limited information through official documents, making it difficult to find specific information about actual DRAM devices. This paper presents reliable findings on the internal structure and characteristics of DRAM using activate-induced bitflips (AIBs), retention time test, and row-copy operation. While previous studies have attempted to understand the internal behaviors of DRAM devices, they have only shown results without identifying the causes or have analyzed DRAM modules rather than individual chips. We first uncover the size, structure, and operation of DRAM subarrays and verify our findings on the characteristics of DRAM. Then, we correct misunderstood information related to AIBs and demonstrate experimental results supporting the cause of rowhammer. We expect that the information we uncover about the structure, behavior, and characteristics of DRAM will help future DRAM research.

cs.CR