arXiv subjects

Mingda Gong

Publications and source records attributed to Mingda Gong.

4 recordsLinked to original sources

arXiv2026

Imaging the Magnetically Driven Reconstruction of the Electronic States in the Antiferromagnetic Topological Insulator EuSn$_2$As$_2$

The realization of the axion insulator phase in magnetic topological insulators is often hindered by crystalline symmetries that protect gapless surface states, even when time-reversal symmetry is broken. Here, we use variable-temperature scanning tunneling microscopy (STM) and spectroscopy (STS), complemented with density functional theory (DFT), to investigate the local electronic structure of the antiferromagnetic (AFM) topological insulator EuSn$_2$As$_2$ across its N\'eel transition at $T_N = 24$ K. On the (001) surface, we observe a substantial density of intrinsic Sn vacancies that introduce nanoscale electronic inhomogeneity and p-type doping. Upon cooling below $T_N$, we resolve the emergence of two distinct magnetically driven gaps: a $\sim$100 meV gap near the Fermi level and a $\sim$50 meV gap at the ARPES-resolved Dirac point. We attribute the former gap to AFM Brillouin-zone folding and hybridization. The characteristics of the 50 meV gap point toward the lifting of mirror-symmetry protection by Sn vacancies and the consequent mass gapping of the Dirac point, although contributions from AFM-induced folding hybridization cannot be entirely ruled out. Our findings provide real-space evidence for strong coupling between localized moments and itinerant topological states, highlighting exfoliable EuSn$_2$As$_2$ as a potential candidate for realizing axion-insulator-based devices.

cond-mat.str-el↗

arXiv2025

Topologically trivial semiconducting behavior and polaronic effects in antiferromagnetic EuZn$_2$As$_2$ and EuCd$_2$Sb$_2$

The Eu-based EuA$_2$X$_2$ (A = Zn, Cd, In, Sn; X = P, As, Sb) family of compounds has recently attracted significant attention as a promising platform for exploring magnetic topological materials, with several members either predicted or reported to exhibit nontrivial topological properties. We investigate the previously reported topological semimetals, EuZn$_2$As$_2$ and EuCd$_2$Sb$_2$, using scanning tunneling microscopy and spectroscopy, complemented by various first-principles computational approaches. Through examination of the cleaved surfaces, step-edges, and defect states, we determine the trivial semiconducting behavior in both material systems, with no evidence of topological surface or edge states. These experimental results are consistent with our theoretical analysis revealing the absence of topological band inversion in either system. Our experimental observations also reveal numerous intrinsic defects that trap charge carriers. These defects may facilitate the formation of magnetic polarons, providing a natural explanation for the colossal negative magnetoresistance observed in many of the EuA$_2$X$_2$ material systems.

cond-mat.str-el↗

arXiv2022

Surface state evolution induced by magnetic order in axion insulator candidate EuIn2As2

Gapping of Dirac surface states through time reversal symmetry breaking may realize the axion insulator state in condensed matter. Despite tremendous efforts, only a few material systems fall in this category of intrinsic magnetic topological insulators (TI). Recent theoretical calculations proposed the antiferromagnetic EuIn$_2$As$_2$ to be a topologically non-trivial magnetic insulator with gapped surface states. Here we use scanning tunneling microscopy and spectroscopy (STM/STS) complemented with density-functional theory (DFT) calculations and modelling to probe the surface electronic states in EuIn$_2$As$_2$. We find a spin-orbit induced bulk gap of ~120 meV located only a few meV above the Fermi energy, within which topological surface states reside. Temperature dependent measurements provide evidence of the partial gapping (~40 meV) of the surface states at low temperatures below the AFM order, which decreases with increasing temperature but remains finite above $T_N$

cond-mat.str-el↗

arXiv2021

Inhomogeneous Kondo-lattice in geometrically frustrated Pr$_{2}$Ir$_{2}$O$_{7}$

Magnetic fluctuations induced by geometric frustration of local Ir-spins disturb the formation of long range magnetic order in the family of pyrochlore iridates, R$_{2}$Ir$_{2}$O$_{7}$ (R = lanthanide)$^{1}$. As a consequence, Pr$_{2}$Ir$_{2}$O$_{7}$ lies at a tuning-free antiferromagnetic-to-paramagnetic quantum critical point and exhibits a diverse array of complex phenomena including Kondo effect, biquadratic band structure, metallic spin-liquid (MSL), and anomalous Hall effect$^{2-5}$. Using spectroscopic imaging with the scanning tunneling microscope, complemented with machine learning K-means clustering analysis, density functional theory, and theoretical modeling, we probe the local electronic states in single crystal of Pr$_{2}$Ir$_{2}$O$_{7}$ and discover an electronic phase separation. Nanoscale regions with a well-defined Kondo resonance are interweaved with a non-magnetic metallic phase with Kondo-destruction. Remarkably, the spatial nanoscale patterns display a correlation-driven fractal geometry with power-law behavior extended over two and a half decades, consistent with being in proximity to a critical point. Our discovery reveals a new nanoscale tuning route, viz. using a spatial variation of the electronic potential as a means of adjusting the balance between Kondo entanglement and geometric frustration.

cond-mat.str-el↗