SearcharxivSearch

arXiv subjects

Mingfei Xu

Publications and source records attributed to Mingfei Xu.

2 recordsLinked to original sources

$\tau$-tilting modules, depth and delooping level

Let $A$ be a finite-dimensional basic algebra over an algebraically closed field $K$, $T$ a finitely generated support $\tau$-tilting right $A$-module and $B={\rm End}_A T$. Denote by ${\rm Fac}T$ the subcategory of finitely generated right $A$-modules generated by $T$. We define the depth relative to $T$ and the delooping level relative to $T$ and show that the finitistic dimension of the opposite algebra of $B$ is bounded by the depth of $\textup{Fac}T$ relative to $T$ and the delooping level of $\textup{Fac}T$ relative to $T$ whenever $T$ is self-orthogonal. We give applications to the finitistic dimension conjecture. More precisely, we show that if $A$ is an algebra of finite representation type, then the finitistic dimension of $B^{op}$ is finite.

math.RT

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

physics.app-ph