arXiv subjects

Mingyang Qin

Publications and source records attributed to Mingyang Qin.

12 recordsLinked to original sources

arXiv2026

Ultrafast Non-Volatile Weyl LuminoMem for Mid-Infrared In-Memory Computing

Integrated optoelectronic systems strive to combine the logic/memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures rely on separate readout circuitry and modulators, creating bottlenecks in energy and latency, while existing direct transduction methods often compromise on switching speed or non-volatility. Here, we report an ultrafast, non-volatile optoelectronic memory, named LuminoMem, that integrates electrical storage and mid-infrared light emission in a single device. The device utilizes a floating-gate architecture, in which the Weyl semiconductor tellurium serves simultaneously as a charge-trapping storage layer and an emissive medium. This design enables nanosecond-scale electrical programming of non-volatile photoluminescence at 3.4 um, allowing direct optical access to stored states without external modulation. We demonstrate 4-bit (16-level) optical storage capacity and validate the device's performance through neural network simulations that achieve high accuracy on the Fashion-MNIST dataset. By effectively bridging the gap between electronic storage and mid-infrared photonics, the demonstrated mid-infrared LuminoMem provides a hardware foundation for promoting current computation efficiency and potential intelligent platforms that co-integrate computing, memory, and sensing capabilities.

cond-mat.mtrl-sci↗

arXiv2026

Gate-Tunable Mid-Infrared Electroluminescence from Te/MoS2 p-n Heterojunctions

Mid-infrared (MIR) emitters are critical components in advanced photonic systems, driving progress in fields such as chemical sensing, environmental monitoring, medical diagnostics, thermal imaging and free-space communications. Conventional MIR emitters based on III-V heterostructures rely on complex epitaxial growth on rigid lattice-matched substrates and suffer from limited integration compatibility with CMOS or flexible platforms. The recent development of novel MIR emitters based on two-dimensional (2D) materials such as black phosphorus (BP) is more suitable for on-chip applications but faces challenges related to stability and emission efficiency. Based on the recently discovered highly efficient photoluminescence of Te, we demonstrate a gate-tunable midinfrared light-emitting diode based on a van der Waals heterojunction formed by multilayer transition metal dichalcogenide (TMD) MoS2 and tellurium (Te). The device emits polarized electroluminescence (EL) centered at 3.5 $\mu$m under forward bias at 25 K, and the EL persists up to 80 K with reduced intensity. Gate control of the MoS2 Fermi level modulates the band alignment and injection efficiency, enabling dynamic tuning of the EL intensity. The emission remains spectrally stable under varying bias and gating, indicating robust band-edge recombination. These results establish the Te/TMD heterostructure as a promising platform for integrated polarized mid-infrared optoelectronics.

cond-mat.mes-hall↗

arXiv2024

Correlation between unconventional superconductivity and strange metallicity revealed by operando superfluid density measurements

Strange-metal behavior has been observed in superconductors ranging from cuprates to pressurized nickelates, but its relationship to unconventional superconductivity remains elusive. Here, we perform operando superfluid density measurements on ion-gated FeSe films. We observe for the first time a synchronized evolution of superconducting condensate and the strange-metal phase with electron doping. A linear scaling between zero-temperature superfluid density and the strange-metal resistivity coefficient is further established, which nails down a direct link between the formation of superfluid in the superconducting state and the scattering of carriers in the strange-metal normal state. Remarkably, the scaling also applies for different iron-based and cuprate superconductors despite their distinct electronic structures and pairing symmetries. Such a correlation can be reproduced in a theoretical calculation on the two-dimensional Yukawa-Sachdev-Ye-Kitaev model by considering a cooperative effect of quantum critical fluctuation and disorder. These findings indicate a fundamental principle governing superconducting condensation and strange-metal scattering in unconventional superconductors.

cond-mat.supr-con↗

arXiv2023

In-situ electrical and thermal transport properties of FeySe1-xTex films with ionic liquid gating

We combine in-situ electrical transport and Seebeck coefficient measurements with the ionic liquid gating technique to investigate superconductivity and the normal state of FeySe1-xTex (FST) films. We find that the pristine FST films feature a non-Fermi liquid temperature dependence of the Seebeck coefficient, i.e., S/T ~ AS lnT, and AS is strongly correlated with the superconducting transition temperature (Tc). Ionic liquid gating significantly raises Tc of FST films, for which the Seebeck coefficient displays a novel scaling behavior and retains the logarithmic temperature dependence. Moreover, a quantitative relationship between the slope of T-linear resistivity (A\r{ho}) and Tc for gated films is observed, i.e., (A\r{ho})1/2 ~ Tc, consistent with previous reports on cuprates and FeSe. The scaling behaviors of AS and A\r{ho} point to a spin-fluctuation-associated transport mechanism in gated FeySe1-xTex superconductors.

cond-mat.supr-con↗

arXiv2022

Emergence of superconducting dome in insulating ZrNx films via nitrogen manipulation

Reproducing the electronic phase diagram of strongly correlated high-transition-temperature (high-Tc) superconductors in materials other than Cu-, Fe-, and Ni-based compounds has been a challenging task. Only very recently, a few material systems have partially achieved this goal by band engineering. In this work, we combine film growth, charge transport, magnetometry, Terahertz Spectroscopy, Raman scattering, and Scanning Transmission Electron Microscopy to investigate superconductivity and the normal state of ZrNx, which reveals a phase diagram that bears extraordinary similarities to those of high-Tc superconductors. Remarkably, even though superconductivity of ZrNx can be characterized within the Bardeen-Cooper-Schrieffer paradigm and its normal state can be understood within the Fermi liquid framework, by tunning the N chemical concentration, we observe the evolution of a superconducting dome in the close vicinity of a strongly insulating state and a normal state resistivity mimics its counterpart of the high-Tc superconductors.

cond-mat.supr-con↗

arXiv2021

Ionic liquid gating induced two superconductor-insulator phase transitions in spinel oxide Li$_{1 \pm x}$Ti$_2$O$_{4-δ}$

The associations between emergent physical phenomena (e.g., superconductivity) and orbital, charge, and spin degrees of freedom of $3d$ electrons are intriguing in transition metal compounds. Here, we successfully manipulate the superconductivity of spinel oxide Li$_{1\pm x}$Ti$_2$O$_{4-δ}$ (LTO) by ionic liquid gating. A dome-shaped superconducting phase diagram is established, where two insulating phases are disclosed both in heavily electron-doping and hole-doping regions. The superconductor-insulator transition (SIT) in the hole-doping region can be attributed to the loss of Ti valence electrons. In the electron-doping region, LTO exhibits an unexpected SIT instead of a metallic behavior despite an increase in carrier density. Furthermore, a thermal hysteresis is observed in the normal state resistance curve, suggesting a first-order phase transition. We speculate that the SIT and the thermal hysteresis stem from the enhanced $3d$ electron correlations and the formation of orbital ordering by comparing the transport and structural results of LTO with the other spinel oxide superconductor MgTi$_2$O$_4$, as well as analysing the electronic structure by first-principles calculations. Further comprehension of the detailed interplay between superconductivity and orbital ordering would contribute to the revealing of unconventional superconducting pairing mechanism.

cond-mat.supr-con↗

arXiv2021

Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films

Iron selenide (FeSe) - the structurally simplest iron-based superconductor, has attracted tremendous interest in the past years. While the transition temperature (Tc) of bulk FeSe is $\sim$ 8 K, it can be significantly enhanced to 40 - 50 K by various ways of electron doping. However, the underlying physics for such great enhancement of Tc and so the Cooper pairing mechanism still remain puzzles. Here, we report a systematic study of the superconducting- and normal-state properties of FeSe films via ionic liquid gating. With fine tuning, Tc evolves continuously from below 10 K to above 40 K; in situ two-coil mutual inductance measurements unambiguously confirm the gating is a uniform bulk effect. Close to Tc, the normal-state resistivity shows a linear dependence on temperature and the linearity extends to lower temperatures with the superconductivity suppressed by high magnetic fields. At high fields, the normal-state magnetoresistance exhibits a linear-in-field dependence and obeys a simple scaling relation between applied field and temperature. Consistent behaviors are observed for different-Tc states throughout the gating process, suggesting the pairing mechanism very likely remains the same from low- to high-Tc state. Importantly, the coefficient of the linear-in-temperature resistivity is positively correlated with Tc, similarly to the observations in cuprates, Bechgaard salts and iron pnictide superconductors. Our study points to a short-range antiferromagnetic exchange interaction mediated pairing mechanism in FeSe.

cond-mat.supr-con↗

arXiv2021

Determining the absolute value of magnetic penetration depth in small-sized superconducting films

In the previous four decades, a two-coil mutual inductance (MI) technique has been widely employed in characterizing magnetic penetration depth, $λ$, of superconducting films. However, the conventional methods used to obtain $λ$ are not applicable to small-sized films with common shapes, which limits the application of the MI technique in superconductivity research. Here, we first employed the fast wavelet collocation (FWC) method to a two-coil system and then proposed the possibility of directly obtaining the absolute $λ$ of polygonal superconducting films with arbitrary sizes. To verify its accuracy and advantages, we extracted the $λ$ values of square NbN films with different sizes using the FWC and conventional flux leakage subtraction (FLS) methods. Notably, the FLS method fails for a $5\times 5 \, \rm mm^2$ film, which is attributed to the significant current peak at the film edge. In contrast, the absolute $λ$ extracted using the FWC method was independent of the film size. Finally, we established the applicability of the FWC method to large coil spacings, which may pave the way for integrating high-accuracy $λ$ measurements with the ionic liquid gating technique.

cond-mat.supr-con↗

arXiv2019

Non-Volatile Superconductivity in an Insulating Copper Oxide Induced via Ionic Liquid Gating

Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a trial-and-error method that is difficult to implement and time consuming. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating Pr_2CuO_{4\pmδ} film, based on two distinct mechanisms: 1) with positive electric fields, the film can be reversibly switched between non-superconducting and superconducting states, attributed to the carrier doping effect. 2) The film becomes more resistive by applying negative bias voltage up to -4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such a persistent superconducting state represents a novel phenomenon in copper oxides, resulting from the doping healing of oxygen vacancies in copper-oxygen planes as unraveled by high-resolution scanning transmission electron microscope and in-situ x-ray diffraction experiments. The effective manipulation and mastering of volatile/non-volatile superconductivity in the same parent cuprate opens the door to more functionalities for superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-T_c superconductors.

cond-mat.supr-con↗

arXiv2019

Emergent superconductivity in single crystalline $\mathrm{MgTi}_2\mathrm{O}_4$ films via structural engineering

Spinel compounds have demonstrated rich functionalities but rarely shown superconductivity. Here, we report the emergence of superconductivity in the spinel $\mathrm{MgTi}_2\mathrm{O}_4$, known to be an insulator with a complicated order. The superconducting transition is achieved by engineering a superlattice of $\mathrm{MgTi}_2\mathrm{O}_4$ and $\mathrm{SrTiO}_3$. The onset transition temperature in the $\mathrm{MgTi}_2\mathrm{O}_4$ layer can be tuned from 0 to 5 K in such geometry, concurrently with a stretched $c$-axis (from 8.51 to 8.53 Å) compared to the bulk material. Such a positive correlation without saturation suggests ample room for the further enhancement. Intriguingly, the superlattice exhibits isotropic upper critical field $H_{\mathrm{c}2}$ that breaks the Pauli limit, distinct from the highly anisotropic feature of interface superconductivity. The origin of superconductivity in the $\mathrm{MgTi}_2\mathrm{O}_4$ layer is understood in combination with the electron energy loss spectra and the first-principles electronic structure calculations, which point to the birth of superconductivity in the $\mathrm{MgTi}_2\mathrm{O}_4$ layer by preventing the Ti-Ti dimerization. Our discovery not only provides a platform to explore the interplay between the superconductivity and other exotic states, but also opens a new window to realize superconductivity in the spinel compounds as well as other titanium oxides.

cond-mat.supr-con↗

arXiv2019

High-throughput investigation of tunable superconductivity in FeSe films

There is an ongoing debate about the relative importance of structural change versus doping charge carriers on the mechanism of superconductivity in Fe-based materials. Elucidating this issue is a major challenge since it would require a large number of samples where structure properties or the carrier density is systematically varied. FeSe, with its structural simplicity, is an ideal platform for addressing this question. It has been demonstrated that the superconductivity in this material can be controlled through crystal lattice tuning, as well as electronic structure manipulation. Here, we apply a high-throughput methodology to FeSe to systematically delineate the interdependence of its structural and electronic properties. Using a dual-beam pulsed laser deposition, we have generated FeSe films with a marked gradient in the superconducting transition temperature (below 2 K < Tc < 12 K) across 1 cm width of the films. The Tc gradient films display ~ 1% continuous stretch and compression in the out-of-plane and in-plane lattice constants respectively, triggering the continuous enhancement of superconductivity. Combining transport and angular-resolved photoemission measurements on uniform FeSe films with tunable Tc from 3 K to 14 K, we find that the electron carrier density is intimately correlated with Tc, i.e., it increases by a factor of 6 and ultimately surpasses the almost constant hole concentration. Our transmission electron microscope and band structure calculations reveal that rather than by shifting the chemical potential, the enhanced superconductivity is linked to the selective adjustment of the dxy band dispersion across the Fermi level by means of reduced local lattice distortions. Therefore, such novel mechanism provides a key to understand discrete superconducting phases in FeSe.

cond-mat.supr-con↗

arXiv2018

Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films

In this article, we studied the role of oxygen in Pr$_{2}$CuO$_{4\pmδ}$ thin films fabricated by polymer assisted deposition method. The magnetoresistance and Hall resistivity of Pr$_{2}$CuO$_{4\pmδ}$ samples were systematically investigated. It is found that with decreasing the oxygen content, the low-temperature Hall coefficient ($R_H$) and magnetoresistance change from negative to positive, similar to those with the increase of Ce-doped concentration in R$_{2-x}$Ce$_{x}$CuO$_{4}$ (R= La, Nd, Pr, Sm, Eu). In addition, $T_c$ versus $R_H$ for both Pr$_{1-x}$LaCe$_{x}$CuO$_{4}$ and Pr$_{2}$CuO$_{4\pmδ}$ samples can coincide with each other. We conclude that the doped electrons induced by the oxygen removal are responsible for the superconductivity of $T^\prime$-phase parent compounds.

cond-mat.supr-con↗