arXiv subjects

Mingze Yang

Publications and source records attributed to Mingze Yang.

2 recordsLinked to original sources

arXiv2023

SUES-200: A Multi-height Multi-scene Cross-view Image Benchmark Across Drone and Satellite

Cross-view image matching aims to match images of the same target scene acquired from different platforms. With the rapid development of drone technology, cross-view matching by neural network models has been a widely accepted choice for drone position or navigation. However, existing public datasets do not include images obtained by drones at different heights, and the types of scenes are relatively homogeneous, which yields issues in assessing a model's capability to adapt to complex and changing scenes. In this end, we present a new cross-view dataset called SUES-200 to address these issues. SUES-200 contains 24120 images acquired by the drone at four different heights and corresponding satellite view images of the same target scene. To the best of our knowledge, SUES-200 is the first public dataset that considers the differences generated in aerial photography captured by drones flying at different heights. In addition, we developed an evaluation for efficient training, testing and evaluation of cross-view matching models, under which we comprehensively analyze the performance of nine architectures. Then, we propose a robust baseline model for use with SUES-200. Experimental results show that SUES-200 can help the model to learn highly discriminative features of the height of the drone.

cs.CV↗

arXiv2020

Abrupt degenerately-doped silicon nanowire tunnel junctions

We have confirmed the presence of narrow, degenerately-doped axial silicon nanowire (SiNW) $p$-$n$ junctions via off-axis electron holography (EH). SiNWs were grown via the vapor-solid-liquid (VLS) mechanism using gold (Au) as the catalyst, silane (SiH$_{4}$), diborane (B$_{2}$H$_{6}$) and phosphine (PH$_{3}$) as the precursors, and hydrochloric acid (HCl) to stabilize the growth. Two types of growth were carried out, and in each case we explored growth with both $n$/$p$ and $p$/$n$ sequences. In the first type, we abruptly switched the dopant precursors at the desired junction location, and in the second type we slowed the growth rate at the junction to allow the dopants to readily leave the Au catalyst. We demonstrate degenerately-doped $p$/$n$ and $n$/$p$ nanowire segments with abrupt potential profiles of $1.02\pm0.02$ and $0.86\pm0.3$ V, and depletion region widths as narrow as $10\pm1$ nm via EH. Low temperature current-voltage measurements show an asymmetric curvature in the forward direction that resemble planar gold-doped tunnel junctions, where the tunneling current is hidden by a large excess current. The results presented herein show that the direct VLS growth of degenerately-doped axial SiNW $p$-$n$ junctions is feasible, an essential step in the fabrication of more complex SiNW-based devices for electronics and solar energy.

physics.app-ph↗