arXiv subjects

Minhyea Lee

Publications and source records attributed to Minhyea Lee.

27 records · Page 2Linked to original sources

arXiv2014

Large enhancement of emergent magnetic fields in MnSi with impurities and pressure

We report a study of the topological Hall effect (THE) in Fe-doped MnSi and compare with results from pure MnSi under pressure. We find that Fe doping increases the THE, indicating an enhancement of the magnitude of the emergent gauge field. This is consistent with the concurrent reduction in the length scale of the skyrmion lattice. For both pressurized and doped samples, we calculate the emergent magnetic field based on the size of the measured THE, and compare it with a theoretical upper-bound. We find that the ratio of these two remains more or less constant with pressure or Fe doping, but differs greatly from that of pure MnSi at ambient pressure. We discuss the implications of this ratio with respect to trends in the saturated magnetic moment and helical pitch length as T_C \rightarrow 0 via doping and pressure, respectively.

cond-mat.str-el↗

arXiv2011

Quantum superposition of a single microwave photon in two different "colour" states

The ability to coherently couple arbitrary harmonic oscillators in a fully-controlled way is an important tool to process quantum information. Coupling between quantum harmonic oscillators has previously been demonstrated in several physical systems by use of a two-level system as a mediating element. Direct interaction at the quantum level has only recently been realized by use of resonant coupling between trapped ions. Here we implement a tunable direct coupling between the microwave harmonics of a superconducting resonator by use of parametric frequency conversion. We accomplish this by coupling the mode currents of two harmonics through a superconducting quantum interference device (SQUID) and modulating its flux at the difference (~ 7 GHz) of the harmonic frequencies. We deterministically prepare a single-photon Fock state and coherently manipulate it between multiple modes, effectively controlling it in a superposition of two different "colours". This parametric interaction can be described as a beam-splitter-like operation that couples different frequency modes. As such, it could be used to implement linear optical quantum computing protocols on-chip.

cond-mat.mes-hall↗

arXiv2010

Noise Performance of Lumped Element Direct Current Superconducting Quantum Interference Device Amplifiers in the 4 GHz-8 GHz Range

We report on the noise of a lumped element Direct Current Superconducting Quantum Interference Device amplifier. We show that the noise temperature in the 4 GHz-8 GHz range over ranges of 10's of MHz is below 1 kelvin (three photons of added noise), characterize the overall behavior of the noise as a function of bias parameters, and discuss potential mechanisms which determine the noise performance in this amplifier. We show that this device can provide more than a factor of 10 improvement in practical system noise over existing phase-preserving microwave measurement systems in this frequency band.

cond-mat.supr-con↗

arXiv2009

Unusual Hall Effect Anomaly in MnSi Under Pressure

We report the observation of a highly unusual Hall current in the MnSi in an applied pressure P = 6-12 kbar. The Hall conductivity displays a distinctive step-wise field profile quite unlike any other Hall response observed in solids. We identify the origin of this Hall current with the effective real-space magnetic field due to chiral spin textures, which may be a precursor of the partial-order state at P>14.6 kbar. We discuss evidence favoring the chiral spin mechanism for the origin of the observed Hall anomaly.

cond-mat.str-el↗

arXiv2007

The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe_{1/4}TaS_2: the inelastic regime

The large magnetic anisotropy in the layered ferromagnet Fe_{1/4}TaS_2 leads to very sharp reversals of the magnetization $\bf M$ at the coercive field. We have exploited this feature to measure the anomalous Hall effect (AHE), focussing on the AHE conductivity $σ^A_{xy}$ in the inelastic regime. At low temperature T (5-50 K), $σ^A_{xy}$ is T-independent, consistent with the Berry-phase/Karplus-Luttinger theory. Above 50 K, we extract an inelastic AHE conductivity $σ^{in}_{xy}$ that scales as the square of $Δρ$ (the T dependent part of the resistivity $ρ$). The term $σ^{in}_{xy}$ clarifies the T dependence and sign-reversal of the AHE coefficient R_s(T). We discuss the possible ubiquity of $σ^{in}_{xy}$ in ferromagnets, and ideas for interpreting its scaling with $(Δρ)^2$. Measurements of the magnetoresistance (MR) reveal a rich pattern of behavior vs. T and field tilt-angle. We show that the 2 mechanisms, the anisotropic MR effect and field-suppression of magnons, account for the intricate MR behavior, including the bow-tie features caused by the sharp reversals in $\bf M$.

cond-mat.str-el↗

arXiv2007

A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi

Measurements of the Hall conductivity in MnSi can provide incisive tests of theories of the anomalous Hall (AH) effect, because both the mean-free-path and magnetoresistance (MR) are unusually large for a ferromagnet. The large MR provides an accurate way to separate the AH conductivity $σ_{xy}^A$ from the ordinary Hall conductivity $σ_{xy}^N$. Below the Curie temperature $T_C$, $σ_{xy}^A$ is linearly proportional to $ M$ (magnetization) with a proportionality constant $S_H$ that is independent of both $T$ and $H$. In particular, $S_H$ remains a constant while $σ_{xy}^N$ changes by a factor of 100 between 5 K and $T_C$. We discuss implications of the hidden constancy in $S_H$.

cond-mat.str-el↗

arXiv2007

Sharp switching of the magnetization in Fe1/4TaS2

Anisotropic magneto-transport measurements are reported on Fe1/4TaS2 single crystals grown by vapor transport. Both the magnetization and resistivity are extremely anisotropic, with the magnetic moments aligned parallel to the c crystallographic direction. Fe1/4TaS2 orders ferromagnetically below TC = 160 K and displays very sharp hysteresis loops in the ordered state for H||c. The corresponding magnetoresistance is negative, and it qualitatively reproduces the features observed in the M(H) data, by showing a sharp drop around the critical field Hs for the moment reversal. The magnetization switching time shows an unusual increase with increasing temperature. For field applied within the ab plane, the magnetization remains small and linear in field up to 5 T, and the magnetoresistance is positive and quadratic in field, with no visible hysteresis. The squareness of the H||c M(H) loops and the high critical field for the magnetization switch (Hs = 3.7 T at T = 2 K) allow us to classify Fe1/4TaS2 as a strong ferromagnet.

cond-mat.str-el↗

arXiv2006

Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping

Research on the oxide perovskites has uncovered electronic properties that are strikingly enhanced compared with those in conventional metals. Examples are the high critical temperatures of the cuprate superconductors and the colossal magnetoresistance in the manganites. The conducting layered cobaltate $\rm Na_xCoO_2$ displays several interesting electronic phases as $x$ is varied including water-induced superconductivity and an insulating state that is destroyed by field. Initial measurements showed that, in the as-grown composition, $\rm Na_xCoO_2$ displays moderately large thermopower $S$ and conductivity $σ$. However, the prospects for thermoelectric cooling applications faded when the figure of merit $Z$ was found to be small at this composition (0.6$ $0.75, $S$ undergoes an even steeper enhancement. At the critical doping $x_p\sim$ 0.85, $Z$ (at 80 K) reaches values $\sim$40 times larger than in the as-grown crystals. We discuss prospects for low-temperature thermoelectric applications.

cond-mat.str-el↗

arXiv2005

Structural and transport properties of epitaxial NaxCoO2 thin films

We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.

cond-mat.str-el↗