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Minjia Chen

Publications and source records attributed to Minjia Chen.

10 recordsLinked to original sources

Representations of Hecke-Clifford superalgebras at roots of unity

In this article, we give a classification of irreducible completely splittable representations of affine Hecke-Clifford superalgebras $H_n^{\mathrm{aff}}(q)$ when $q^2$ is a primitive $h$-th root of unity. As an application, we derive a necessary and sufficient condition for the finite Hecke-Clifford superalgebra $H_n(q)$ to be semisimple. Specially we show that $H_n(q)$ is semisimple if and only $h >n$ in the case $h$ is odd and $h >2n$ in the case $h$ is even.

math.RT

3D surface profiling via photonic integrated geometric sensor

Measurements of microscale surface patterns are essential for process and quality control in industries across semiconductors, micro-machining, and biomedicines. However, the development of miniaturized and intelligent profiling systems remains a longstanding challenge, primarily due to the complexity and bulkiness of existing benchtop systems required to scan large-area samples. A real-time, in-situ, and fast detection alternative is therefore highly desirable for predicting surface topography on the fly. In this paper, we present an ultracompact geometric profiler based on photonic integrated circuits, which directly encodes the optical reflectance of the sample and decodes it with a neural network. This platform is free of complex interferometric configurations and avoids time-consuming nonlinear fitting algorithms. We show that a silicon programmable circuit can generate pseudo-random kernels to project input data into higher dimensions, enabling efficient feature extraction via a lightweight one-dimensional convolutional neural network. Our device is capable of high-fidelity, fast-scanning-rate thickness identification for both smoothly varying samples and intricate 3D printed emblem structures, paving the way for a new class of compact geometric sensors.

physics.optics

Tri-layer SiN-on-Si 8x8 Optical Switches with Thermo-optic and Electro-optic Actuators

We present two spatial-multiplexed switch-and-select (S&S) 8x8 optical switches incorporating a tri-layer SiN-on-Si platform, one equipped with thermo-optic (T-O) and the other electro-optic (E-O) switching elements. To the best of our knowledge, the electro-optic switch fabric is the first-of-its-kind device assembled in such a multi-layer platform. The shuffle between the multiplexer and demultiplexer array is established via a tri-layer Si-SiN-SiN structure, creating a three-dimensional crossing-free photonic shuffle network. At the same time, the implementation of the S&S topology can effectively suppress the first-order crosstalk. The measured on-chip losses for the T-O switch range from 2.1 to 11.5 dB, with a 5.2 dB average, while the E-O device exhibits losses between 8.7 to 19.6 dB, with a 15.1 dB average. Both switches demonstrate ultra-low crosstalk, with measured ranges of 38.9 to 50.8 dB and 42.8 to 51.9 dB, for the T-O and E-O devices respectively. The switching times are 17.6 us for the T-O switch and 5.9 ns with the E-O actuated one. These performance metrics highlight the potential of these switches for next-generation data center applications.

physics.optics

Dilated space-and-wavelength selective crosspoint optical switch

Photonic integrated switches that are both space and wavelength selective are a highly promising technology for data-intensive applications as they benefit from multi-dimensional manipulation of optical signals. However, scaling these switches normally poses stringent challenges such as increased fabrication complexity and control difficulties, due to the growing number of switching elements. In this work, we propose a new type of dilated crosspoint topology, which efficiently handles both space and wavelength selective switching, while reducing the required switching element count by an order of magnitude compared to reported designs. To the best of our knowledge, our design requires the fewest switching elements for an equivalent routing paths number and it fully cancels the first-order in-band crosstalk. We demonstrate such an ultra-compact space-and-wavelength-selective switch (SWSS) at a scale of $4\times 4\times 4\lambda$ on the silicon-on-insulator (SOI) platform. Experimental results reveal that the switch achieves an insertion loss ranging from 2.3 dB to 8.6 dB and crosstalk levels in between -35.3 dB and -59.7 dB. The add-drop microring-resonators (MRRs) are equipped with micro-heaters, exhibiting a rise and fall time of 46 $\mu$s and 0.33 $\mu$s, respectively. These performance characteristics highlight the switch's ultra-low element count and crosstalk with low insertion loss, making it a promising candidate for advanced data center applications.

physics.optics

Ultra-low-crosstalk Silicon Switches Driven Thermally and Electrically

Silicon photonic switches are widely considered as a cost-effective solution for addressing the ever-growing data traffic in datacenter networks, as they offer unique advantages such as low power consumption, low latency, small footprint and high bandwidth. Despite extensive research efforts, crosstalk in large-scale photonic circuits still poses a threat to the signal integrity. In this paper, we present two designs of silicon Mach-Zehnder Interferometer (MZI) switches achieving ultra-low-crosstalk, driven thermally and electrically. Each switch fabric is optimized at both the device and circuit level to suppress crosstalk and reduce system complexity. Notably, for the first time to the best of our knowledge, we harness the inherent self-heating effect in a carrier-injection-based MZI switch to create a pair of phase shifters that offer arbitrary phase differences. Such a pair of phase shifters induces matched insertion loss at each arm, thus minimizing crosstalk. Experimentally, an ultra-low crosstalk ratio below -40 dB is demonstrated for both thermo-optic (T-O) and electro-optic (E-O) switches. The T-O switch exhibits an on-chip loss of less than 5 dB with a switching time of 500 microseconds, whereas the E-O switch achieves an on-chip loss as low as 8.5 dB with a switching time of under 100 ns. In addition, data transmission of a 50 Gb/s on-off keying signal is demonstrated with high fidelity on the E-O switch, showing the great potential of the proposed switch designs.

physics.optics

Chip-scale sensor for spectroscopic metrology

Miniaturized spectrometers hold great promise for in situ, in vitro, and even in vivo sensing applications. However, their size reduction imposes vital performance constraints in meeting the rigorous demands of spectroscopy, including fine resolution, high accuracy, and ultra-wide observation window. The prevailing view in the community holds that miniaturized spectrometers are most suitable for the coarse identification of signature peaks. In this paper, we present an integrated reconstructive spectrometer that enables near-infrared (NIR) spectroscopic metrology, and demonstrate a fully packaged sensor with auxiliary electronics. Such a sensor operates over a 520 nm bandwidth together with a resolution of less than 8 pm, which translates into a record-breaking bandwidth-to-resolution ratio of over 65,000. The classification of different types of solid substances and the concentration measurement of aqueous and organic solutions are performed, all achieving approximately 100% accuracy. Notably, the detection limit of our sensor matches that of the commercial benchtop counterparts, which is as low as 0.1% (i.e. 100 mg/dL) for identifying the concentration of glucose solution.

physics.optics

Asymmetrical estimator for training encapsulated deep photonic neural networks

Photonic neural networks (PNNs) are fast in-propagation and high bandwidth paradigms that aim to popularize reproducible NN acceleration with higher efficiency and lower cost. However, the training of PNN is known to be challenging, where the device-to-device and system-to-system variations create imperfect knowledge of the PNN. Despite backpropagation (BP)-based training algorithms being the industry standard for their robustness, generality, and fast gradient convergence for digital training, existing PNN-BP methods rely heavily on accurate intermediate state extraction or extensive computational resources for deep PNNs (DPNNs). The truncated photonic signal propagation and the computation overhead bottleneck DPNN's operation efficiency and increase system construction cost. Here, we introduce the asymmetrical training (AsyT) method, tailored for encapsulated DPNNs, where the signal is preserved in the analogue photonic domain for the entire structure. AsyT offers a lightweight solution for DPNNs with minimum readouts, fast and energy-efficient operation, and minimum system footprint. AsyT's ease of operation, error tolerance, and generality aim to promote PNN acceleration in a widened operational scenario despite the fabrication variations and imperfect controls. We demonstrated AsyT for encapsulated DPNN with integrated photonic chips, repeatably enhancing the performance from in-silico BP for different network structures and datasets.

cs.LG

I/O-efficient iterative matrix inversion with photonic integrated circuits

Photonic integrated circuits have been extensively explored for optical processing with the aim of breaking the speed bottleneck of digital electronics. However, the input/output (IO) bottleneck remains one of the key barriers. Here we report a novel photonic iterative processor (PIP) for matrix-inversion-intensive applications. The direct reuse of inputted data in the optical domain unlocks the potential to break the IO bottleneck. We demonstrate notable IO advantages with a lossless PIP for real-valued matrix inversion and integral-differential equation solving, as well as a coherent PIP with optical loops integrated on-chip, enabling complex-valued computation and a net inversion time of 1.2 ns. Furthermore, we estimate at least an order of magnitude enhancement in IO efficiency of a PIP over photonic single-pass processors and the state-of-the-art electronic processors for reservoir training tasks and MIMO precoding tasks, indicating the huge potential of PIP technology in practical applications.

cs.ET

Redesigning spectroscopic sensors with programmable photonic circuits

Optical spectroscopic sensors are a powerful tool to reveal light-matter interactions in many fields, such as physics, biology, chemistry, and astronomy. Miniaturizing the currently bulky spectrometers has become imperative for the wide range of applications that demand in situ or even in vitro characterization systems, a field that is growing rapidly. Benchtop spectrometers are capable of offering superior resolution and spectral range, but at the expense of requiring a large size. In this paper, we propose a novel method that redesigns spectroscopic sensors via the use of programmable photonic circuits. Drawing from compressive sensing theory, we start by investigating the most ideal sampling matrix for a reconstructive spectrometer and reveal that a sufficiently large number of sampling channels is a prerequisite for both fine resolution and low reconstruction error. This number is, however, still considerably smaller than that of the reconstructed spectral pixels, benefitting from the nature of reconstruction algorithms. We then show that the cascading of a few engineered MZI elements can be readily programmed to create an exponentially scalable number of such sampling spectral responses over an ultra-broad bandwidth, allowing for ultra-high resolution down to single-digit picometers without incurring additional hardware costs. Experimentally, we implement an on-chip spectrometer with a fully-programmable 6-stage cascaded MZI structure and demonstrate a < 10 pm resolution with a > 200 nm bandwidth using only 729 sampling channels. This achieves a bandwidth-to-resolution ratio of over 20,000, which is, to our best knowledge, about one order of magnitude greater than any reported miniaturized spectrometers to date. We further illustrate that by employing dispersion-engineered waveguide components, the device bandwidth can be extended to over 400 nm.

physics.optics