arXiv subjects

Mira B. Mahendru

Publications and source records attributed to Mira B. Mahendru.

3 recordsLinked to original sources

arXiv2026

Magnetoresistive Memory in the Paramagnetic Phase of Eu$_5$In$_2$As$_6$

Magnetoresistive materials that respond sensitively to applied fields are central to modern data storage technologies. Here we unveil a novel Magnetoresistive Memory (MRM) in Eu$_5$In$_2$As$_6$, where the electrical resistivity depends not only on the magnitude but also on the history of the applied magnetic field. Such an effect has been reported in only two classes of strongly correlated electron systems: perovskite manganites and pyrochlore iridates. In both cases, the effect has been observed in the magnetically ordered phase. It has been attributed to metastable magnetic states in manganites and conducting domain walls in iridates. Remarkably, the MRM in Eu$_5$In$_2$As$_6$ onsets at twice the antiferromagnetic transition temperature, well within the paramagnetic phase. The temperature, field, and time dependence of resistivity suggest that either a hidden order or a fluctuating phase with short-range correlations underlies this effect. Our results offer MRM as a new platform for quantum sensing and memory technologies, and encourage searching for MRM in related materials.

cond-mat.str-el↗

arXiv2024

Two types of colossal magnetoresistance with distinct mechanisms in Eu5In2As6

Recent reports of colossal negative magnetoresistance (CMR) in a few magnetic semimetals and semiconductors have attracted attention, because these materials are devoid of the conventional mechanisms of CMR such as mixed valence, double exchange interaction, and Jahn-Teller distortion. New mechanisms have thus been proposed, including topological band structure, ferromagnetic clusters, orbital currents, and charge ordering. The CMR in these compounds has been reported in two forms: either a resistivity peak or a resistivity upturn suppressed by a magnetic field. Here we reveal both types of CMR in a single antiferromagnetic semiconductor Eu5In2As6. Using the transport and thermodynamic measurements, we demonstrate that the peak-type CMR is likely due to the percolation of magnetic polarons with increasing magnetic field, while the upturn-type CMR is proposed to result from the melting of a charge order under the magnetic field. We argue that similar mechanisms operate in other compounds, offering a unifying framework to understand CMR in seemingly different materials.

cond-mat.str-el↗

arXiv2022

Spin-carrier coupling induced ferromagnetism and giant resistivity peak in EuCd$_2$P$_2$

EuCd$_2$P$_2$ is notable for its unconventional transport: upon cooling the metallic resistivity changes slope and begins to increase, ultimately 100-fold, before returning to its metallic value. Surprisingly, this giant peak occurs at 18K, well above the Néel temperature ($T_N$) of 11.5K. Using a suite of sensitive probes of magnetism, including resonant x-ray scattering and magneto-optical polarimetry, we have discovered that ferromagnetic order onsets above $T_N$ in the temperature range of the resistivity peak. The observation of inverted hysteresis in this regime shows that ferromagnetism is promoted by coupling of localized spins and itinerant carriers. The resulting carrier localization is confirmed by optical conductivity measurements.

cond-mat.str-el↗