arXiv subjects

Mircea Guina

Publications and source records attributed to Mircea Guina.

22 records · Page 2Linked to original sources

arXiv2019

Epitaxial phases of high Bi content GaSbBi alloys

GaSbBi alloys have recently emerged as attractive materials for mid-infrared optoelectronics owing to strong band gap reduction enabled by Bi incorporation into the GaSb matrix. The fundamental understanding of the epitaxial process required to demonstrate high quality crystals is in an early-developmental phase. From this perspective, we report on the key role played by the Sb/Ga flux ratio in controlling the structural quality and incorporation of high Bi content (up to 14.5 %-Bi), revealing three distinct epitaxial phases. The first phase (below stoichiometric Sb/Ga) exhibits Ga-Bi compound droplets, low crystal quality, and reduced Bi content. At the second phase (above stoichiometric Sb/Ga), the crystal exhibits smooth surfaces and excellent crystallinity with efficient Bi incorporation. The last phase corresponds to exceeding a Sb/Ga threshold that leads to reduced Bi incorporation, Bi droplets and degraded crystallinity. This threshold value that defines the optimal growth window is controlled by the temperature as well as the Bi/Ga ratio. Increasing temperature increases the threshold, albeit simultaneously reducing Bi incorporation. Conversely, increasing the Bi/Ga flux ratio increases Bi incorporation, while narrowing down and ultimately closing the window. This study provides a general framework enabling development of high quality GaSbBi heterostructures for emerging mid-infrared optoelectronics.

physics.app-ph↗

arXiv2017

Field emission from self-catalyzed GaAs nanowires

We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-controlled tungsten tip functioning as anode. Experimental data are analyzed in the framework of Fowler-Nordheim theory. We demonstrate stable current up to 10$^{-7}$ A emitted from the tip of single nanowire, with field enhancement factor $β$ up to 112 at anode-cathode distance d=350 nm. A linear dependence of $β$ on the anode-cathode distance is experimentally found. We also show that the presence of a Ga catalyst droplet suppresses the emission of current from the nanowire tip. This allows detection of field emission from the nanowire sidewalls, which occurs with reduced field enhancement factor and stability. This study further extends the GaAs technology to vacuum electronics applications.

cond-mat.mes-hall↗

arXiv2017

Structural investigation of uniform ensembles of self-catalyzed GaAs nanowires fabricated by a lithography-free technique

Structural analysis of self-catalyzed GaAs nanowires (NWs) grown on lithography-free oxide patterns is described with insight on their growth kinetics. Statistical analysis of templates and NWs in different phases of the growth reveals extremely high dimensional uniformity due to a combination of uniform nucleation sites, lack of secondary nucleation of NWs, and self-regulated growth under the effect of nucleation antibunching. Consequently, we observed the first evidence of sub-Poissonian GaAs NW length distributions. The high phase purity of the NWs is demonstrated using complementary transmission electron microscopy (TEM) and high-resolution x-ray diffractometry (HR-XRD). It is also shown that, while NWs are to large extent defect-free with up to 2 um long twin-free zincblende segments, low temperature micro-photoluminescence spectroscopy reveals that the proportion of structurally disordered sections can be detected from their spectral properties.

cond-mat.mes-hall↗

arXiv2016

VECSEL systems for generation and manipulation of trapped magnesium ions

Experiments in atomic, molecular, and optical (AMO) physics rely on lasers at many different wavelengths and with varying requirements on spectral linewidth, power, and intensity stability. Vertical external-cavity surface-emitting lasers (VECSELs), when combined with nonlinear frequency conversion, can potentially replace many of the laser systems currently in use. Here we present and characterize VECSEL systems that can perform all laser-based tasks for quantum information processing experiments with trapped magnesium ions. For photoionization of neutral magnesium, 570.6$\,$nm light is generated with an intracavity frequency-doubled VECSEL containing a lithium triborate (LBO) crystal for second harmonic generation. External frequency doubling produces 285.3$\,$nm light for resonant interaction with the $^{1}S_{0}\leftrightarrow$ $^{1}P_{1}$ transition of neutral Mg. Using an externally frequency-quadrupled VECSEL, we implement Doppler cooling of $^{25}$Mg$^{+}$ on the 279.6$\,$nm $^{2}S_{1/2}\leftrightarrow$ $^{2}P_{3/2}$ cycling transition, repumping on the 280.4$\,$nm $^{2}S_{1/2}\leftrightarrow$ $^{2}P_{1/2}$ transition, coherent state manipulation, and resolved sideband cooling close to the motional ground state. Our systems serve as prototypes for applications in AMO requiring single-frequency, power-scalable laser sources at multiple wavelengths.

physics.atom-ph↗