arXiv subjects

Miriam S. Vitiello

Publications and source records attributed to Miriam S. Vitiello.

28 records · Page 2Linked to original sources

arXiv2019

Fully phase-stabilized quantum cascade laser frequency comb

Optical frequency comb synthesizers (FCs) [1] are laser sources covering a broad spectral range with a number of discrete, equally spaced and highly coherent frequency components, fully controlled through only two parameters: the frequency separation between adjacent modes and the carrier offset frequency. Providing a phase-coherent link between the optical and the microwave/radio-frequency regions [2], FCs have become groundbreaking tools for precision measurements[3,4]. Despite these inherent advantages, developing miniaturized comb sources across the whole infrared (IR), with an independent and simultaneous control of the two comb degrees of freedom at a metrological level, has not been possible, so far. Recently, promising results have been obtained with compact sources, namely diode-laser-pumped microresonators [5,6] and quantum cascade lasers (QCL-combs) [7,8]. While both these sources rely on four-wave mixing (FWM) to generate comb frequency patterns, QCL-combs benefit from a mm-scale miniaturized footprint, combined with an ad-hoc tailoring of the spectral emission in the 3-250 μm range, by quantum engineering [9]. Here, we demonstrate full stabilization and control of the two key parameters of a QCL-comb against the primary frequency standard. Our technique, here applied to a far-IR emitter and open ended to other spectral windows, enables Hz-level narrowing of the individual comb modes, and metrological-grade tuning of their individual frequencies, which are simultaneously measured with an accuracy of 2x10^-12, limited by the frequency reference used. These fully-controlled, frequency-scalable, ultra-compact comb emitters promise to pervade an increasing number of mid- and far-IR applications, including quantum technologies, due to the quantum nature of the gain media [10].

physics.optics↗

arXiv2019

High dynamic range, heterogeneous, terahertz quantum cascade lasers featuring thermally-tunable frequency comb operation over a broad current range

We report on the engineering of broadband quantum cascade lasers (QCLs) emitting at Terahertz (THz) frequencies, which exploit a heterogeneous active region scheme and have a current density dynamic range (Jdr) of 3.2, significantly larger than the state of the art, over a 1.3 THz bandwidth. We demonstrate that the devised broadband lasers operate as THz optical frequency comb synthesizers in continuous wave, with a maximum optical output power of 4 mW (0.73 mW in the comb regime). Measurement of the intermode beatnote map reveals a clear dispersion-compensated frequency comb regime extending over a continuous 106 mA current range (current density dynamic range of 1.24), significantly larger than the state of the art reported under similar geometries, with a corresponding emission bandwidth of 1.05 THz ans a stable and narrow (4.15 KHz) beatnote detected with a signal-to-noise ratio of 34 dB. Analysis of the electrical and thermal beatnote tuning reveals a current-tuning coefficient ranging between 5 MHz/mA and 2.1 MHz/mA and a temperature-tuning coefficient of -4 MHz/K. The ability to tune the THz QCL combs over their full dynamic range by temperature and current paves the way for their use as powerful spectroscopy tool that can provide broad frequency coverage combined with high precision spectral accuracy.

physics.app-ph↗

arXiv2018

Heterostructured hBN-BP-hBN Nanodetectors at THz Frequencies

Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the Terahertz (THz) frequency range. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a major obstacle for the realization of room-temperature (RT), high-efficiency devices, like source, detectors or modulators, especially in the far-infrared. Two-dimensional (2D) layered materials, like graphene and phosphorene, recently emerged as a reliable, flexible and versatile alternative for devising efficient RT detectors operating at Terahertz frequencies. We here combine the benefit of the heterostructure architecture with the exceptional technological potential of 2D layered nanomaterials; by reassembling the thin isolated atomic planes of hexagonal borum nitride (hBN) with a few layer phosphorene (black phosphorus (BP)) we mechanically stacked hBN/BP/hBN heterostructures to devise high-efficiency THz photodetectors operating in the 0.3-0.65 THz range from 4K to 300K with a record SNR=20000.

cond-mat.mes-hall↗

arXiv2018

Probing topological insulators surface states via plasma-wave Terahertz detection

Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone physics, as well as for exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics, and quantum computing. Investigation of topological surface states (TSS) is conventionally hindered by the fact that in most of experimental conditions the TSS properties are mixed up with those of bulk-states. Here, we devise a novel tool to unveil TSS and to probe related plasmonic effects. By engineering Bi2Te(3-x)Sex stoichiometry, and by gating the surface of nanoscale field-effect-transistors, exploiting thin flakes of Bi2Te2.2Se0.8 or Bi2Se3, we provide the first demonstration of room-temperature Terahertz (THz) detection mediated by over-damped plasma-wave oscillations on the "activated" TSS of a Bi2Te2.2Se0.8 flake. The reported detection performances allow a realistic exploitation of TSS for large-area, fast imaging, promising superb impacts on THz photonics.

cond-mat.mes-hall↗

arXiv2018

Photonic Devices Based On Black-Phosphorus and Combined Hybrid 2D nanomaterials

Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the far-infrared. Despite the exceptional versatility, they commonly require challenging epitaxial growth procedures due to the need of clean and abrupt interfaces, which proved to be a major obstacle for the realization of room-temperature (RT), high-efficiency devices, like source, detectors or modulators. The discovery of graphene and the related fascinating capabilities have triggered an unprecedented interest in devices based on inorganic two-dimensional (2D) materials. Amongst them black-phosphorus (BP) recently showed an extraordinary potential in a variety of applications across micro-electronics and photonics. With an energy gap in-between the gapless graphene and the larger gap transition metal dichalcogenides, BP can form the basis for a new generation of high-performance photonic devices that could be engineered from "scratch" like transparent saturable absorbers, fast photocounductive switch and low noise photodetectors, exploiting its peculiar electrical, thermal and optical anisotropy. This paper will review the latest achievements in black phosphorus-based THz photonics and discuss future perspectives of this rapidly developing research field.

cond-mat.mes-hall↗

arXiv2017

Femtosecond photo-switching of interface polaritons in black phosphorus heterostructures

The possibility of hybridizing collective electronic motion with mid-infrared (mid-IR) light to form surface polaritons has made van der Waals layered materials a versatile platform for extreme light confinement and tailored nanophotonics. Graphene and its heterostructures have attracted particular attention because the absence of an energy gap allows for plasmon polaritons to be continuously tuned. Here, we introduce black phosphorus (BP) as a promising new material in surface polaritonics that features key advantages for ultrafast switching. Unlike graphene, BP is a van der Waals bonded semiconductor, which enables high-contrast interband excitation of electron-hole pairs by ultrashort near-infrared (near-IR) pulses. We design a SiO$_2$/BP/SiO$_2$ heterostructure in which the surface phonon modes of the SiO$_2$ layers hybridize with surface plasmon modes in BP that can be activated by photo-induced interband excitation. Within the Reststrahlen band of SiO$_2$, the hybrid interface polariton assumes surface-phonon-like properties, with a well-defined frequency and momentum and excellent coherence. During the lifetime of the photogenerated electron-hole plasma, coherent polariton waves can be launched by a broadband mid-IR pulse coupled to the tip of a scattering-type scanning near-field optical microscopy (s-SNOM) setup. The scattered radiation allows us to trace the new hybrid mode in time, energy, and space. We find that the surface mode can be activated within ~50 fs and disappears within 5 ps, as the electron-hole pairs in BP recombine. The excellent switching contrast and switching speed, the coherence properties, and the constant wavelength of this transient mode make it a promising candidate for ultrafast nanophotonic devices.

cond-mat.mes-hall↗

arXiv2017

Split ring resonator resonance assisted terahertz antennas

We report on the computational development of novel architectures of low impedance broadband antennas, for efficient detection of Terahertz (THz) frequency beams. The conceived Split Ring Resonator Resonance Assisted (SRR RA) antennas are based on both a capacitive and inductive scheme, exploiting a 200 Ohm and 400 Ohm impedance, respectively. Moreover, the impedance is tunable by varying the coupling parameters in the exploited geometry, allowing for better matching with the detector circuit for maximum power extraction. Our simulation results have been obtained by assuming a 1.5 THz operation frequency.

physics.ins-det↗

arXiv2013

High performance bilayer-graphene Terahertz detectors

We report bilayer-graphene field effect transistors operating as THz broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity $\sim 1.2V/W (1.3 mA/W)$ and a noise equivalent power $\sim 2\times 10^{-9} W/Hz^{-1/2}$ in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.

cond-mat.mes-hall↗

arXiv2013

Photocurrent-based detection of Terahertz radiation in graphene

Graphene is a promising candidate for the development of detectors of Terahertz (THz) radiation. A well-known detection scheme due to Dyakonov and Shur exploits the confinement of plasma waves in a field-effect transistor (FET), whereby a dc photovoltage is generated in response to a THz field. This scheme has already been experimentally studied in a graphene FET [L. Vicarelli et al., Nature Mat. 11, 865 (2012)]. In the quest for devices with a better signal-to-noise ratio, we theoretically investigate a plasma-wave photodetector in which a dc photocurrent is generated in a graphene FET. The rectified current features a peculiar change of sign when the frequency of the incoming radiation matches an even multiple of the fundamental frequency of plasma waves in the FET channel. The noise equivalent power per unit bandwidth of our device is shown to be much smaller than that of a Dyakonov-Shur detector in a wide spectral range.

cond-mat.mes-hall↗

arXiv2011

Comparative analysis of resonant phonon THz quantum cascade lasers

We present a comparative analysis of a set of GaAs-based THz quantum cascade lasers, based on longitudinal-optical phonon scattering depopulation, by using an ensemble Monte Carlo simulation, including both carrier-carrier and carrier-phonon scattering. The simulation shows that the parasitic injection into the states below the upper laser level limits the injection efficiency and thus the device performance at the lasing threshold. Additional detrimental effects playing an important role are identified. The simulation results are in reasonable agreement with the experimental findings.

cond-mat.mes-hall↗