arXiv subjects

Mirjana Dimitrievska

Publications and source records attributed to Mirjana Dimitrievska.

11 recordsLinked to original sources

arXiv2026

Layer-Dependent Interfacial Coupling and Exciton Pinning in WSe2/Graphene Heterostructures

Understanding interfacial interactions in two-dimensional heterostructures is crucial for their implementation in future optoelectronic and quantum technologies. Here, we investigate interactions between WSe2 and graphene by comparing 1-5 layer MOCVD-grown WSe2 on graphene/SiC with exfoliated WSe2 on SiO2/Si using Raman and photoluminescence spectroscopy combined with atomic force microscopy. Growth on graphene induces persistent compressive strain of approximately 0.2% and reduces the interlayer WSe2 distance by 0.11 +/- 0.05 Angstrom. Interfacial disorder is strongest in the WSe2 layer directly contacting graphene, with an effective Urbach energy of approximately 20 meV, decreasing to approximately 16 meV upon addition of a second layer and remaining similar for thicker films. Increasing WSe2 thickness leads to progressive electron transfer from graphene to WSe2, resulting in p-type doping of graphene and n-type doping of WSe2, with the graphene hole density increasing from approximately 0.4 x 10^13 cm^-2 for 1L to 0.8 x 10^13 cm^-2 for 5L. The A- and B-exciton energies of WSe2 remain nearly pinned on graphene, in contrast to their pronounced thickness-dependent shifts on SiO2/Si. We show that this pinning arises primarily from electronic screening and compressive strain, with smaller contributions from charge transfer and modified interlayer coupling. These findings establish graphene as an active interface for controlling excitonic properties in scalable van der Waals heterostructures.

cond-mat.mtrl-sci↗

arXiv2026

When Cubic Is Not Isotropic: Phonon-Exciton Decoupling in CuInSnS$_4$ Single Crystals

Atomic-scale disorder can create hidden optical anisotropy even in crystals that are structurally cubic on average. Here, we show that CuInSnS$_4$ single crystals host locally symmetry-broken environments arising from intrinsic In/Sn cation disorder, which affect vibrational and excitonic properties in markedly different ways. Combining polarization- and temperature-dependent Raman spectroscopy, infrared near-field microscopy, steady-state and time-resolved photoluminescence, and first-principles calculations, we find that phonons remain largely symmetry-averaged and locally homogeneous on the nanoscale. In contrast, photoluminescence reveals a lower-energy band-tail emission with pronounced polarization anisotropy following a well-defined angular symmetry, highlighting the strong sensitivity of excitonic states to local symmetry breaking. This phonon-exciton decoupling reveals that intrinsic disorder can localize excitons while preserving vibrational coherence and dielectric homogeneity, thereby opening new opportunities for polarization-sensitive light sources, anisotropic photodetectors, and exciton-based optical functionalities even in nominally cubic multinary semiconductors.

cond-mat.mtrl-sci↗

arXiv2025

Lessons from Chalcopyrites for Scaling Thin Film Perovskite Photovoltaic Technology

The growing demand for photovoltaic (PV) technologies that are lightweight, flexible, and seamlessly integrated into diverse applications has propelled interest in thin-film solar cells. Among these, Cu(In,Ga)(S,Se)2 (CIGS) and metal halide perovskites have garnered significant attention in the past and present, respectively. While CIGS reached commercial readiness after decades of refinement, their large-scale deployment was hindered by manufacturing complexity, scale-up challenges, and a lack of coordination between materials, device design, and production systems. Perovskite solar cells, despite setting record efficiencies at an unprecedented pace, now face similar challenges on their path to commercialization: ensuring long-term stability, translating laboratory performance to scalable architectures, and aligning with industrial realities. In this perspective, we revisit the CIGS experience not as a benchmark, but as a blueprint, highlighting how its successes and failures can inform a more deliberate and durable trajectory for perovskite PV. Bridging this historical perspective with the current frontier, we propose that the future of perovskites depends not only on continued innovation, but on learning from past thin-film PV experience to avoid its repetition.

physics.app-ph↗

arXiv2025

Parallel Exploration of the Optoelectronic Properties of (Sb,Bi)(S,Se)(Br,I) Chalcohalides

Chalcohalides are an emerging family of semiconductors with irresistible material properties, shaped by the intricate interplay between their unique structural chemistry and vibrational dynamics. Despite their promise for next-generation solar energy conversion devices, their intrinsic optoelectronic properties remain largely unexplored. Here, we focus on the (Sb,Bi)(S,Se)(Br,I) system, a subset of compounds that share the same quasi-1D crystal structure. Using a two-step physical vapor deposition (PVD) process, we synthesize the eight ternary chalcohalide compounds, demonstrating bandgaps ranging from 1.38 to 2.08 eV with sharp, single-component photoluminescence (PL) peaks. In a parallel exploration of carrier dynamics and intrinsic electron-phonon interactions -- comprehensively studied using power-, temperature-dependent, and time-resolved PL measurements -- we map their direct impact on optoelectronic performance. Supported by first-principles density functional theory (DFT) defect calculations, we establish clear structure-property relations, identifying solid-solutions engineering as an effective means to fine-tune the native phonon structures and further suppress non-radiative recombination. This study provides a blueprint for optimizing chalcohalides as high-efficiency materials across a wide range of optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Raman and IR Signatures of Mo3S4 and Mo3S13 Molybdenum Sulphide Molecular Catalysts for Solar Hydrogen Evolution

Molybdenum sulfide clusters, [Mo3S4]4+ and [Mo3S13]2-, have emerged as key molecular models for understanding active sites in Mo-S-based catalysts and as promising candidates for energy conversion applications. Despite their importance, comprehensive vibrational characterization of these clusters remains limited. Here, we present a detailed Raman and infrared spectroscopic analysis of both clusters, supported by density functional theory (DFT) calculations. High-quality crystalline samples were synthesized and characterized using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) to confirm morphology and stoichiometry. Raman spectra, acquired using 488 nm and 532 nm laser excitation, were deconvoluted using Lorentzian fitting. Vibrational mode assignments were made through direct comparison with DFT predictions. For [Mo3S4]4+, major Raman bands appear near 200 cm^-1, 350 cm^-1, and 450 cm^-1, corresponding to Mo-S-Mo bending, Mo-S stretching, and terminal sulfur vibrations. [Mo3S13]2- shows two distinct spectral regions: 100-400 cm^-1 for Mo-S and S-S bending and stretching, and 450-550 cm^-1 for terminal disulfide (S-S) stretching. Complementary IR spectra calculations reveal additional vibrational features, yielding a more complete fingerprint for each cluster. Finally, we demonstrate that Raman spectroscopy offers greater sensitivity than X-ray diffraction (XRD) in detecting these clusters on supporting materials. This work provides a detailed vibrational reference for [Mo3S4]4+ and [Mo3S13]2-, establishing Raman and IR spectroscopy as powerful tools for characterizing Mo-S molecular clusters in both fundamental and applied contexts.

cond-mat.mtrl-sci↗

arXiv2025

Spectroscopic Signatures of Structural Disorder and Electron-Phonon Interactions in Trigonal Selenium Thin Films for Solar Energy Harvesting

Selenium is experiencing renewed interest as a elemental semiconductor for a range of optoelectronic and energy applications due to its irresistibly simple composition and favorable wide bandgap. However, its high volatility and low radiative efficiency make it challenging to assess structural and optoelectronic quality, calling for advanced, non-destructive characterization methods. In this work, we employ a closed-space encapsulation strategy to prevent degradation during measurement and enable sensitive probing of vibrational and optoelectronic properties. Using temperature-dependent Raman and photoluminescence spectroscopy, we investigate grown-in stress, vibrational dynamics, and electron-phonon interactions in selenium thin films synthesized under nominally identical conditions across different laboratories. Our results reveal that short-range structural disorder is not intrinsic to the material, but highly sensitive to subtle processing variations, which strongly influence electron-phonon coupling and non-radiative recombination. We find that such structural disorder and grown-in stress likely promote the formation of extended defects, which act as dominant non-radiative recombination centers limiting carrier lifetime and open-circuit voltage in photovoltaic devices. These findings demonstrate that the optoelectronic quality of selenium thin films can be significantly improved through precise control of synthesis and post-deposition treatments, outlining a clear pathway toward optimizing selenium-based thin film technologies through targeted control of crystallization dynamics and microstructural disorder.

cond-mat.mtrl-sci↗

arXiv2025

BaZrS$_\text{3}$ Lights Up: The Interplay of Electrons, Photons, and Phonons in Strongly Luminescent Single Crystals

Chalcogenide perovskites have emerged as a promising class of materials for the next generation of optoelectronic applications, with BaZrS$_\text{3}$ attracting significant attention due to its wide bandgap, earth-abundant composition, and thermal and chemical stability. However, previous studies have consistently reported weak and ambiguous photoluminescence (PL), regardless of synthesis method, raising questions about the intrinsic optoelectronic quality of this compound. In this work, we demonstrate strong, band-to-band-dominated PL at room temperature in high-quality BaZrS$_\text{3}$ single crystals, with a PL quantum yield of $\sim$0.005\%. Despite the narrow, single-component PL emission band, time-resolved PL measurements reveal a carrier lifetime of $1.0\pm0.2$ ns. To understand the origin of the strong PL and short carrier lifetime, we perform multiwavelength excitation and polarization-dependent Raman measurements, supported by first-principles lattice dynamics calculations. We identify all 23 theoretically predicted Raman-active modes and their symmetries, providing a comprehensive reference for future studies. Our results indicate that phonon-assisted carrier decay and nontrivial electron-phonon interactions contribute to the short carrier lifetimes, as evidenced by Raman spectroscopy and DFT calculations. Further studies on compositional variations or partial cation/anion substitutions could mitigate electron-phonon coupling and enhance carrier lifetimes. By establishing a detailed reference for the intrinsic vibrational and optoelectronic properties of BaZrS$_\text{3}$, this work paves the way for further advancements in chalcogenide perovskites for energy and optoelectronic technologies.

cond-mat.mtrl-sci↗

arXiv2025

On Tailoring Structural and Optoelectronic Properties of TiO2 Thin Films Synthesized via 'Room' Temperature High Power Impulse Magnetron Sputtering (HiPIMS)

Titanium dioxide (TiO2) is a key material in optoelectronic and energy conversion technologies, including solar cells and photocatalysis. However, integrating TiO2 into flexible or temperature-sensitive devices requires deposition techniques that avoid high-temperature processing while maintaining control over both phase composition and crystallinity. In this work, we demonstrate the synthesis of nanocrystalline TiO2 thin films using High Power Impulse Magnetron Sputtering (HiPIMS) at nearroom temperature. By systematically varying total pressure and oxygen flow, we achieve tunable anatase to rutile phase ratios and control over crystalline quality, as evidenced by Raman and photoluminescence trends. The observed optical trends in both refractive index and emission are directly linked to the underlying structural evolution, with compositional analysis verifying stoichiometric consistency across all deposition conditions. Our findings establish HiPIMS as a powerful low temperature method for tailoring TiO2 thin films and enabling their application in flexible photovoltaics, photoelectrochemical water splitting, and other energy-related systems.

cond-mat.mtrl-sci↗

arXiv2025

Structural and Dynamical Behaviors of Fast Ionic Conducting Potassium nido-(Carba)borates

Solid-state batteries are one of the most recent iterations of electrochemical energy storage, and the technology can potentially provide safer and more-energy-dense batteries. The metal closo- and nido-(carba)borates show promise as versatile solid electrolytes and have been shown to have some of the highest ionic conductivities as well as wide electrochemical stability windows. In the present study, we investigate the four potassium nido-(carba)borates KB$_{11}$H$_{14}$, K-7-CB$_{10}$H$_{13}$, K-7,8-C$_2$B$_9$H$_{12}$, and K-7,9-C$_2$B$_9$H$_{12}$, and a total of eight new crystal structures were solved. All four compounds transition from a low-temperature, ordered phase to a high-temperature, disordered phase with the space group Fm-3m. In the high-temperature polymorphs, the anions are disordered and undergo rapid reorientational dynamics, which is confirmed by quasielastic neutron scattering experiments. Reorientational activation energies of 0.151(2) eV, 0.146(32) eV, and 0.143(3) eV were determined for K-7-CB$_{10}$H$_{13}$, K-7,8-C$_2$B$_9$H$_{12}$, and K-7,9-C$_2$B$_9$H$_{12}$, respectively. Additionally, such rotationally fluid anions are concomitant with fast potassium-ion conductivity. The highest ionic conductivity is observed for K-7,8-C$_2$B$_9$H$_{12}$ with 1.7$\times$10$^{-2}$ Scm$^{-1}$ at 500 K and an activation energy of 0.28 eV in the disordered state. The differences in phase transition temperatures, reorientational dynamics, and ionic conductivities between the potassium nido-(carba)borates illustrate a strong correlation between the K$^+$ cationic mobility and the local cation-anion interactions, anion dynamics, and the specific positions of the carbon-atoms in the nido-(carba)borate anion cages.

cond-mat.mtrl-sci↗

arXiv2022

Understanding the growth mechanism of BaZrS$_3$ chalcogenide perovskite thin films from sulfurized oxide precursors

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable solution for effective synthesis, especially from the perspective of circumventing the difficulty of handling alkali earth metals. In this work, we explore in detail the synthesis of BaZrS3 from Ba-Zr-O oxide precursor films sulfurized at temperatures ranging from 700 °C to 1000 °C. We propose a formation mechanism of BaZrS3 based on a two-step reaction involving an intermediate amorphization step of the BaZrO3 crystalline phase. We show how the diffusion of sulfur (S) species in the film is the rate-limiting step of this reaction. The processing temperature plays a key role in determining the total fraction of conversion from oxide to sulfide phase at a constant flow rate of the sulfur-containing H2S gas used as a reactant. Finally, we observe the formation of stoichiometric BaZrS3 (1:1:3), even under Zr-rich precursor conditions, with the formation of ZrO2 as a secondary phase. This marks BaZrS3 quite unique among the other types of chalcogenides, such as chalcopyrites and kesterites, which can instead accommodate quite a large range of non-stoichiometric compositions. This work opens up a pathway for further optimization of the BaZrS3 synthesis process, straightening the route towards future applications of this material.

cond-mat.mtrl-sci↗

arXiv2015

Multiwavelength excitation Raman Scattering Analysis of bulk and 2 dimensional MoS2: Vibrational properties of atomically thin MoS2 layers

In order to deepen in the knowledge of the vibrational properties of 2-dimensional MoS2 atomic layers, a complete and systematic Raman scattering analysis has been performed using both bulk single crystal MoS2 samples and atomically thin MoS2 layers. Raman spectra have been measured under non-resonant and resonant conditions using seven different excitation wavelengths from near-infrared (NIR) to ultraviolet (UV). These measurements have allowed to observe and identify 41 peaks, among which 22 have not been previously experimentally observed for this compound, characterizing the existence of different resonant excitation conditions for the different excitation wavelengths. This has also included the first analysis of resonant Raman spectra that are achieved using UV excitation conditions. In addition, the analysis of atomically thin MoS2 layers has corroborated the higher potential of UV resonant Raman scattering measurements for the non destructive assessment of 2 dimensional MoS2 samples. Analysis of the relative integral intensity of the additional first and second order peaks measured under UV resonant excitation conditions is proposed for the non destructive characterization of the thickness of the layers, complementing previous studies based on the changes of the peak frequencies.

cond-mat.mtrl-sci↗