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Miroslav Cieslar

Publications and source records attributed to Miroslav Cieslar.

3 recordsLinked to original sources

A cylindrical sintering method for more realistic grain boundaries in nanocrystalline thin films

Discrepancies between simulated and experimental mechanical properties in molecular dynamics simulations of nanocrystalline metals typically arise from the sample-construction method and the interatomic potential choice. We introduce a cylindrical sintering method to generate nanocrystalline aluminum thin-film samples with wider, more disordered grain boundaries than the usual Voronoi tessellation method, while maintaining deterministic control over grain size, shape, and orientation. Cylindrical sintered samples are benchmarked against hexagonal Voronoi references under identical conditions using both the classical Pascuet15 MEAM and tabGAP machine-learning potentials. Cylindrical sintered samples consistently show lower mechanical properties than hexagonal Voronoi samples due to their wider, more disordered grain boundaries - an effect independent of the choice of potential. Notably, changing the sample geometry and changing the interatomic potential produce comparable, additive, and independent shifts in predicted properties, highlighting that future molecular dynamics studies must hold both variables fixed for meaningful comparisons. Common neighbor and dislocation extraction analyses confirm that deformation is dominated by grain-boundary-mediated plasticity. Uniaxial tensile tests reveal an inverse Hall-Petch relationship for both sample types and both potentials, with mechanical properties decreasing monotonically as grain size reduces from 40.34 to 4.84 nm. The cylindrical sintering method offers a physically realistic, geometrically controlled alternative that bridges idealized Voronoi models and disordered experimental grain-boundary structures.

cond-mat.mtrl-sci

Spin and Orbital Magnetism in UH2 Thin Films Studied by X-ray Magnetic Circular Dichroism

Uranium dihydride UH2 is a metastable phase unknown in bulk form but accessible through thin-film synthesis. We prepared UH2 films by reactive dc sputtering on CaF2(001) or Si(001) substrates, the latter equipped with a Mo buffer layer to suppress a U-Si interdiffusion. On CaF2, UH2 adopts the fluorite-type structure with a near-[1 1 1] out-of-plane texture, four rotational domains, and a lattice parameter a = 539 +- 3 pm without measurable strain, whereas the Mo-buffered film is polycrystalline. X-ray photoelectron spectroscopy confirmed complete hydrogenation and minimal oxidation. Magnetization and XMCD measurements show ferromagnetic ordering with Curie temperatures of 120-130 K and a uranium 5f moment of 0.9 μB/U, dominated by the orbital contribution (μL ~ 1.4 μB, μS ~ -0.5 μB), in a good agreement with GGA+U computations, which otherwise overestimate absolute values of the spin and orbital components. The slightly reduced moment in thinner CaF2-supported films is attributed to surface U(IV) species. These results demonstrate that thin-film synthesis enables stabilization of UH2 and direct probing of 5f magnetism, opening pathways toward higher uranium hydrides and interface-engineered actinide systems.

cond-mat.mtrl-sci

Synthesis and physical properties of uranium thin-film hydrides UH2 and \b{eta}-UH3

Formation of thin uranium hydrides films, UH2 and \b{eta}-UH3, synthesized by a reactive dc sputtering of uranium metal, was explored using variable deposition conditions. Obtained stable oxygen-free hydride films were studied by a variety of methods, both in situ (photoelectron spectroscopy - XPS), and ex-situ (x-ray diffraction - XRD, transmission electron microscopy - TEM), electrical resistivity, and magnetometry). Both types of hydrides are ferromagnetic, the Curie temperatures of UH2 and \b{eta}-UH3 are approx. 120 and 170 K, respectively. Ferromagnetism in the thin films is robust and does not depend on structure details while electrical resistivity data reflect disorder in both types of hydrides.

cond-mat.mtrl-sci