arXiv subjects

Mitsuhiko Maesato

Publications and source records attributed to Mitsuhiko Maesato.

5 recordsLinked to original sources

arXiv2026

Substitution effects in RuO$_2$ single crystals

RuO$_2$ has emerged as one of the leading candidates for investigating altermagnetism. Recent quantum oscillation and angle-resolved photoemission spectroscopy measurements found the absence of altermagnetism or antiferromagnetism in pure RuO$_2$ crystals. The continuing debate over intrinsic magnetic order in RuO$_2$ may reflect its proximity to an altermagnetic instability. In this work, we grow single crystals of Ru$_{0.9}$V$_{0.1}$O$_2$ and investigate their structural, transport, and magnetic properties. X-ray photoelectron spectroscopy reveals an average V oxidation state near $+4$. The paramagnetic susceptibility remains nearly unchanged up to room temperature, with no evidence of magnetic ordering. Thus, the 10\% V-substitution in RuO$_2$ does not induce altermagnetism. Electronic structure calculations for the V-substituted systems using two methods suggest that a higher level of V-substitution leads to a significant change in the density of states. These findings underscore the potential of nonmagnetic substitution in RuO$_2$ as an attractive candidate for probing altermagnetic transitions and their experimental signatures.

cond-mat.mtrl-sci↗

arXiv2025

High-pressure electronic states in semiconductors studied by infrared spectroscopy: metallization and band gap tuning in Mg$_2$Si, InAs and InSb

In this article, a brief introduction is first given on infrared studies of materials at high pressures using a diamond anvil cell. Then, our recent results of high-pressure infrared studies are described for Mg$_2$Si, InAs, and InSb. For Mg$_2$Si, pressure-induced metallization at pressures near 10 GPa were clearly demonstrated for both carrier-doped and undoped Mg$_2$Si by large increases of reflectivity. For InAs and InSb, their band gap ($E_g$) increased rapidly and almost linearly with pressure with linear coefficients of $dE_g/dP$=84.6 and 112 meV/GPa, respectively. Obtained values of $E_g$ versus lattice parameter at high pressures are compared with those for other IIl-V semiconductors at ambient pressure, giving unique insight into effects of physical and chemical pressures on $E_g$. Above the structural transition pressures of 7 and 3 GPa for InAs and InSb, respectively, they exhibit highly metallic characteristics accompanied by high reflectivity.

cond-mat.mtrl-sci↗

arXiv2021

Magnetic field-driven transition between valence bond solid and antiferromagnetic order in distorted triangular lattice

A molecular Mott insulator $κ$-(ET)$_2$B(CN)$_4$ [ET = bis(ethylenedithio)tetrathiafulvalene] with a distorted triangular lattice exhibits a quantum disordered state with gapped spin excitation in the ground state. $^{13}$C nuclear magnetic resonance, magnetization, and magnetic torque measurements reveal that magnetic field suppresses valence bond order and induces long-range magnetic order above a critical field $\sim 8$ T. The nuclear spin-lattice relaxation rate $1/T_1$ shows persistent evolution of antiferromagnetic correlation above the transition temperature, highlighting a quantum spin liquid state with fractional excitations. The field-induced transition as observed in the spin-Peierls phase suggests that the valence bond order transition is driven through renormalized one-dimensionality and spin-lattice coupling.

cond-mat.str-el↗

arXiv2019

A molecular diamond lattice antiferromagnet as a Dirac semimetal candidate

The ground state of a molecular diamond-lattice compound (ET)Ag$_4$(CN)$_5$ is investigated by the magnetization and nuclear magnetic resonance spectroscopy. We found that the system exhibits antiferromagnetic long-range ordering with weak ferromagnetism at a high temperature of 102 K owing to the strong electron correlation. The spin susceptibility is well fitted into the diamond-lattice Heisenberg model with a nearest neighbor exchange coupling of 230 K, indicating the less frustrated interactions. The transition temperature elevates up to $\sim$195 K by applying pressure of 2 GPa, which records the highest temperature among organic molecular magnets. The first-principles band calculation suggests that the system is accessible to a three-dimensional topological semimetal with nodal Dirac lines, which has been extensively searched for a half-filling diamond lattice.

cond-mat.str-el↗

arXiv2016

Pressure-Tuned Exchange Coupling of a Quantum Spin Liquid in the Molecular Triangular Lattice $κ$-(ET)$_2$Ag$_2$(CN)$_3$

The effects of pressure on a quantum spin liquid are investigated in an organic Mott insulator $κ$-(ET)$_2$Ag$_2$(CN)$_3$ with a spin-1/2 triangular lattice. The application of negative chemical pressure to $κ$-(ET)$_2$Cu$_2$(CN)$_3$, which is a well-known sister Mott insulator, allows for extensive tuning of antiferromagnetic exchange coupling, with $J/k_{\rm B} = 175 - 310$ K, under hydrostatic pressure. Based on $^{13}$C nuclear magnetic resonance measurements under pressure, we uncover universal scaling in the static and dynamic spin susceptibilities down to low temperatures $\sim 0.1k_{\rm B}T/J$. The persistent fluctuations and residual specific heat coefficient are consistent with the presence of gapless low-lying excitations. Our results thus demonstrate fundamental finite-temperature properties of quantum spin liquid in a wide parameter range.

cond-mat.str-el↗