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Miuko Tanaka

Publications and source records attributed to Miuko Tanaka.

9 recordsLinked to original sources

Switchable Magnetoelectric Transport in Graphene via a Van der Waals Multiferroic

Electric and magnetic control of transport properties at atomic interfaces is central to the development of next generation electronics and spintronics. Van der Waals multiferroics materials that simultaneously host dielectric and magnetic orders down to the monolayer limit offer a promising platform for such interfacial control, yet the realization of electronic functionalities that exploit the unique attributes of van der Waals multiferroics has largely remained elusive. Here, we realize a van der Waals heterostructure comprising graphene and the multiferroic CuCrP2S6, enabling gate-switchable magnetoelectric transport in graphene, mediated by the multiferroic layer. The charge-neutrality resistance peak of graphene exhibits pronounced hysteresis arising from polarization flip in the multiferroic state. Application of an in-plane magnetic field shifts this peak in a polarization-dependent manner, revealing magnetic-field-induced polarization modulation a direct signature of the magnetoelectric effect. Furthermore, cooling the device under an applied electric field enables domain control of the multiferroic order, allowing reversible switching of the interfacial magnetoelectric transport. These results provide the first demonstration of interfacial magnetoelectric transport in a vdW heterostructure, and establish a pathway for engineering two-dimensional van der Waals interfaces for functional device applications.

cond-mat.mes-hall

Strain Tuning of Orbital-Driven Giant Magnetoresistance in van der Waals ferrimagnet Mn$_3$Si$_2$Te$_6$

Strain engineering of magnetotransport offers a powerful strategy for uncovering emergent electronic and domain phenomena in quantum magnetic materials, while providing a promising pathway toward next-generation mechanically programmable spintronic technologies. Van der Waals magnets are particularly attractive in this context because their high crystallinity and mechanical flexibility allow exceptionally large, precisely controllable strain, enabling access to strain-induced functionalities unattainable in conventional solids. Here, we report systematic strain control of the van der Waals magnet Mn$_3$Si$_2$Te$_6$, which exhibits an unconventional colossal magnetoresistance whose microscopic origin remains under debate. We demonstrate in situ large-strain modulation of the electrical resistance in bulk crystals and show that the effect can be consistently explained by strain-tunable chiral orbital-current domains. Furthermore, measurements on exfoliated flake devices containing a single chiral domain reveal direct strain control of the electronic structure affected by orbital magnetic moment, establishing a unified microscopic mechanism for the unconventional colossal magnetoresistance. These results identify strain as an exceptionally effective control parameter for tailoring electronic and magnetic states in van der Waals magnets and provide a conceptual framework for realizing spin-straintronic functionalities based on orbital degrees of freedom.

cond-mat.mtrl-sci

Piezomagnetic transport in van der Waals noncoplanar Antiferromagnets

The piezomagnetic effect-strain-induced linear modulation of magnetization, arises in magnets with broken time-reversal symmetry (BTRS), offering a pathway to bidirectional strain-based control of magnetism, which is an essential straintronic and spintronic functionality in solids. Metallic antiferromagnets with BTRS provide an ideal platform to study this effect through transport measurements, yet experimental demonstrations are limited. Van der Waals (vdW) nanomagnets, with their mechanical flexibility, are particularly promising for realizing large piezomagnetic responses and effective transport control. Here we demonstrate piezomagnetic control of electronic transport in nano-devices of the vdW antiferromagnets CoNb$_3$S$_6$ and CoTa$_3$S$_6$, archetypal vdW metals with BTRS that exhibit a spontaneous Hall effect. Applying uniaxial strain linearly modulates both the antiferromagnetic transition temperature and coercive field, consistent with strain-driven tuning of exchange coupling, key signatures of the piezomagnetic effect. Moreover, spontaneous Hall effect is controllable via strain, evidencing piezomagnetic tuning of Berry curvature and its associated geometric transport. These findings establish piezomagnetism as a powerful route to manipulate antiferromagnetic transport, opening avenues for straintronic and spintronic applications in vdW magnetic systems.

cond-mat.mes-hall

Kinetic Inductance of Few-Layer NbSe$_2$ in the Two-Dimensional Limit

Van der Waals (vdW) superconductors remain superconducting down to the monolayer limit, enabling the exploration of emergent physical phenomena and functionality driven by reduced dimensionality. Here, we report the characterization of the kinetic inductance of atomically thin NbSe$_2$, a two-dimensional van der Waals superconductor, using superconducting coplanar waveguides and microwave measurement techniques familiar to circuit quantum electrodynamics (cQED). The kinetic inductance scales inversely with the number of NbSe$_2$ layers, reaching 1.2 nH/$\Box$ in the monolayer limit. Furthermore, the measured kinetic inductance exhibits a thickness-dependent crossover from clean- to dirty-limit behavior, with enhanced dirty-limit contributions emerging in the ultra-thin regime. These effects are likely driven by increased surface scattering, multi-band superconductivity, and geometric confinement. Additionally, the self-Kerr nonlinearity of the NbSe$_2$ films ranges from $K/2\pi$ = -0.008 to -14.7 Hz/photon, indicating its strong potential in applications requiring compact, nearly linear, high-inductance superconducting quantum devices and detectors. The fabrication and characterization techniques demonstrated here are extensible to the investigation of other two-dimensional superconductors.

cond-mat.supr-con

Magnetic resonance and microwave resistance modulation in van der Waals colossal-magnetoresistance material

Colossal magnetoresistance (CMR) is a fascinating quantum phenomenon that continues to draw significant interest in condensed matter physics. Mn3Si2Te6 has emerged as a prototypical CMR material, notable for its puzzling magnetoresistance behavior and pronounced directional anisotropy. Despite extensive research, the mechanisms driving CMR in Mn3Si2Te6 remain elusive [1-4]. In this work, we explore the magnetic resonance of Mn3Si2Te6 and observe a reduced g-factor for magnetic fields applied along the crystalline c-axis compared to the ab-plane, indicating a substantial orbital magnetization contribution along the c-axis. Furthermore, we detect resistance modulation under resonance conditions, suggesting that CMR in Mn3Si2Te6 is sensitive to the out-of-the plane spin polarization. These findings shed new light on the role of orbital magnetic moment in Mn3Si2Te6, offering a deeper understanding of the interplay between spin, orbital and lattice degrees of freedom of electrons in this system.

cond-mat.mtrl-sci

Multilayer Cryogenic Powder Filters with Low Parasitic Capacitance

We report the development of a cryogenic powder filter that simultaneously offers high attenuation of radio-frequency (RF) signals in the gigahertz (GHz) range and minimized parasitic capacitance to ground. Conventional powder filters, which consist of a signal line passing through a metal powder-filled housing, attenuate high-frequency signals via the skin effect. However, these designs often suffer from significant parasitic capacitance between the signal line and the grounded chassis, which can compromise the performance of sensitive measurement setups by limiting their frequency bandwidth. In this work, we demonstrate that a multilayer powder filter design effectively achieves both high RF attenuation and reduced parasitic capacitance. This solution suppresses sample heating due to the unintentional intrusion of RF signals through the wiring, without degrading the performance of the measurement setup.

cond-mat.mes-hall

Superfluid Stiffness and Flat-Band Superconductivity in Magic-Angle Graphene Probed by cQED

The physics of superconductivity in magic-angle twisted bilayer graphene (MATBG) is a topic of keen interest in moir\'e systems research, and it may provide insight into the pairing mechanism of other strongly correlated materials such as high-$T_{\mathrm{c}}$ superconductors. Here, we use DC-transport and microwave circuit quantum electrodynamics (cQED) to measure directly the superfluid stiffness of superconducting MATBG via its kinetic inductance. We find the superfluid stiffness to be much larger than expected from conventional Fermi liquid theory; rather, it is comparable to theoretical predictions involving quantum geometric effects that are dominant at the magic angle. The temperature dependence of the superfluid stiffness follows a power-law, which contraindicates an isotropic BCS model; instead, the extracted power-law exponents indicate an anisotropic superconducting gap, whether interpreted within the Fermi liquid framework or by considering quantum geometry of flat-band superconductivity. Moreover, a quadratic dependence of the superfluid stiffness on both DC and microwave current is observed, which is consistent with Ginzburg-Landau theory. Taken together, our findings indicate that MATBG is an unconventional superconductor with an anisotropic gap and strongly suggest a connection between quantum geometry, superfluid stiffness, and unconventional superconductivity in MATBG. The combined DC-microwave measurement platform used here is applicable to the investigation of other atomically thin superconductors.

cond-mat.supr-con

Temperature-induced phase transitions in the quantum Hall magnet of bilayer graphene

The quantum Hall system can be used to study many-body physics owing to its multiple internal electronic degrees of freedom and tunability. While quantum phase transitions have been studied intensively, research on the temperature-induced phase transitions of this system is limited. We measured the pure bulk conductivity of a quantum Hall antiferromagnetic state in bilayer graphene over a wide range of temperatures and revealed the two-step phase transition associated with the breaking of the long-range order and short-range antiferromagnetic order. Our findings are fundamental to understanding electron correlation in quantum Hall systems.

cond-mat.mes-hall

Spin-valley Hall transport induced by spontaneous symmetry breaking in half-filled zero Landau level of bilayer graphene

Intrinsic Hall conductivity, emerging when chiral symmetry is broken, is at the heart of future low energy consumption devices because it can generate non-dissipative charge neutral current. A symmetry breaking state is also induced by electronic correlation even for the centro-symmetric crystalline materials. However, generation of non-dissipative charge neutral current by intrinsic Hall conductivity induced by such spontaneous symmetry breaking is experimentally elusive. Here we report intrinsic Hall conductivity and generation of a non-dissipative charge neutral current in a spontaneous antiferromagnetic state of zero Landau level of bilayer graphene, where spin and valley contrasting Hall conductivity has been theoretically predicted. We performed nonlocal transport experiment and found cubic scaling relationship between the local and nonlocal resistance, as a striking evidence of the intrinsic Hall effect. Observation of such spontaneous Hall transport is a milestone toward understanding the electronic correlation effect on the non-dissipative transport. Our result also paves a way toward electrical generation of a spin current in non-magnetic graphene via coupling of spin and valley in this symmetry breaking state combined with the valley Hall effect.

cond-mat.mes-hall